MBRF15H45CT-E3 [VISHAY]
Dual Common Cathode Schottky Rectifier;型号: | MBRF15H45CT-E3 |
厂家: | VISHAY |
描述: | Dual Common Cathode Schottky Rectifier |
文件: | 总5页 (文件大小:147K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR15HxxCT, MBRF15HxxCT, MBRB15HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
TO-220AB
ITO-220AB
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
3
3
2
1
2
1
MBR15HxxCT
MBRF15HxxCT
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
PIN 1
PIN 2
PIN 1
PIN 2
CASE
PIN 3
PIN 3
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
TO-263AB
K
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
1
TYPICAL APPLICATIONS
MBRB15HxxCT
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-220AB, ITO-220AB, TO-263AB
IF(AV)
2 x 7.5 A
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
VRRM
35 V to 60 V
150 A
IFSM
VF
0.55 V, 0.61 V
50 μA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
IR
TJ max.
Package
Diode variations
175 °C
meets JESD 201 class 2 whisker test
TO-220AB, ITO-220AB, TO-263AB
Common cathode
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Revision: 12-Jun-13
Document Number: 88782
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR15HxxCT, MBRF15HxxCT, MBRB15HxxCT
www.vishay.com
Vishay General Semiconductor
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR15H35CT MBR15H45CT MBR15H50CT MBR15H60CT UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
V
total device
per diode
15
Maximum average forward rectified
current (fig. 1)
IF(AV)
A
7.5
Non-repetitive avalanche energy
EAS
IFSM
IRRM
ERSM
VC
80
mJ
at 25 °C, IAS = 4 A, L = 10 mH per diode
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
150
A
Peak repetitive reverse surge current per diode
at tp = 2.0 μs, 1 kHz
1.0
20
0.5
10
Peak non-repetitive reverse energy
(8/20 μs waveform)
mJ
kV
Electrostatic discharge capacitor voltage
Human body model: C = 100 F, R = 1.5 k
25
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to +175
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
MBR15H35CT
MBR15H45CT
MBR15H50CT
MBR15H60CT
PARAMETER
SYMBOL
TEST CONDITIONS
UNIT
TYP. MAX.
TYP.
MAX.
IF = 7.5 A TJ = 25 °C
IF = 7.5 A TJ = 125 °C
-
0.50
-
0.63
0.55
0.75
0.66
50
-
0.58
-
0.73
0.61
0.87
0.72
50
Maximum instantaneous forward
voltage per diode
(1)
VF
V
IF = 15 A
IF = 15 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
0.61
-
0.68
-
μA
(2)
Maximum reverse current per diode
IR
Rated VR
3.0
10
2.0
10
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
5.0
MBRB
UNIT
°C/W
Maximum thermal resistance per diode
RJC
3.0
3.0
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE BASE QUANTITY DELIVERY MODE
MBR15H45CT-E3/45
1.85
1.99
1.35
1.35
1.85
1.99
1.35
1.35
45
45
45
81
45
45
45
81
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
Tube
Tube
MBRF15H45CT-E3/45
MBRB15H45CT-E3/45
MBRB15H45CT-E3/81
MBR15H45CTHE3/45 (1)
MBRF15H45CTHE3/45 (1)
MBRB15H45CTHE3/45 (1)
MBRB15H45CTHE3/81 (1)
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 12-Jun-13
Document Number: 88782
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR15HxxCT, MBRF15HxxCT, MBRB15HxxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
20
10
TJ = 150 °C
MBR, MBRB
1
15
TJ = 125 °C
0.1
0.01
MBRF
10
MBR15H35CT, MBR15H45CT
MBR15H50CT, MBR15H60CT
5
0
0.001
0.0001
TJ = 25 °C
0
20
40
60
80
100
0
25
75
100
125
150
175
50
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Fig. 1 - Forward Derating Curve Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
175
150
125
100
75
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
10
50
MBR15H35CT, MBR15H45CT
MBR15H50CT, MBR15H60CT
25
1
1
10
0.1
1
10
100
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
10
TJ = 150 °C
T
J = 25 °C
1
0.1
1
TJ = 125 °C
MBR15H35CT, MBR15H45CT
MBR15H50CT, MBR15H60CT
0.1
0.01
0.01
0.1
1
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 88782
Revision: 12-Jun-13
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR15HxxCT, MBRF15HxxCT, MBRB15HxxCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.113 (2.87)
0.103 (2.62)
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.145 (3.68)
0.135 (3.43)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
PIN
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.191 (4.85)
0.171 (4.35)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.380 (9.65)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 12-Jun-13
Document Number: 88782
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
Document Number: 91000
1
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