MBRF1645HE3_A/P [VISHAY]
Rectifier Diode,;
| 型号： | MBRF1645HE3_A/P |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 局域网 功效 瞄准线 测试 二极管 |
| 文件： | 总5页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRF16xx, MBRB16xx
Vishay General Semiconductor
www.vishay.com
Schottky Barrier Rectifier
FEATURES
D2PAK (TO-263AB)
ITO-220AC
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
K
2
1
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D2PAK (TO-263AB) package)
MBRF16xx
MBRB16xx
PIN 1
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AC package)
K
PIN 1
PIN 2
HEATSINK
PIN 2
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
16 A
VRRM
IFSM
35 V to 60 V
150 A
MECHANICAL DATA
Case: ITO-220AC, D2PAK (TO-263AB)
VF
0.57 V, 0.65 V
150 °C
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
TJ max.
Package
Circuit configuration
ITO-220AC, D2PAK (TO-263AB)
Single
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRB1635
MBRB1645
MBRB1660
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
35
35
35
45
45
45
16
60
60
60
VRWM
VDC
V
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 125 °C
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dV/dt
TJ
1.0
0.5
10 000
V/μs
°C
Operating junction temperature range
Storage temperature range
-65 to +150
-65 to +175
TSTG
Isolation voltage (ITO-220AC only) from terminal to heatsink
t = 1 min
VAC
1500
V
Revision: 26-Sep-2018
Document Number: 88671
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF16xx, MBRB16xx
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MBRB1635 MBRB1645 MBRB1660
UNIT
IF = 16 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
0.63
0.57
0.2
0.75
0.65
1.0
(1)
Maximum instantaneous forward voltage
VF
V
IF = 16 A
Maximum instantaneous reverse current
at DC blocking voltage
(1)
IR
Rated VR
mA
40
50
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF
MBRB
UNIT
Typical thermal resistance from junction to case
RJC
3.0
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
ITO-220AC
TO-263AB
TO-263AB
ITO-220AC
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g) PACKAGE CODE
BASE QUANTITY DELIVERY MODE
MBRF1645-E3/45
1.94
1.33
1.33
1.94
1.33
1.33
45
45
81
P
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
Tube
Tube
MBRB1645-E3/45 (2)
MBRB1645-E3/81 (2)
MBRF1645HE3_A/P (1)
MBRB1645HE3_B/P (1)(2)
MBRB1645HE3_B/I (1)(2)
Tape and reel
Tube
P
Tube
I
Tape and reel
Note
(1)
AEC-Q101 qualified
60 V available in D2PAK (TO-263AB) package only
(2)
Revision: 26-Sep-2018
Document Number: 88671
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF16xx, MBRB16xx
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
20
16
12
8
100
10
MBRB1635, MBRB1645
MBRB1660
Resistive or Inductive Load
TJ = 125 °C
TJ = 75 °C
1
0.1
0.01
TJ = 25 °C
4
0
0.001
0
50
100
150
0
20
40
60
80
100
100
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
150
125
100
75
10 000
1000
100
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
50
25
MBRB1635, MBRB1645
MBRB1660
0
1
10
100
0.1
1
10
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
100
10
TJ = 150 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1
1
T
J = 25 °C
0.1
MBRB1635, MBRB1645
MBRB1660
0.01
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 26-Sep-2018
Document Number: 88671
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF16xx, MBRB16xx
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.076 (1.93) REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
7° REF.
PIN
0.350 (8.89)
0.330 (8.38)
1
2
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.025 (0.64)
0.015 (0.38)
0.028 (0.71)
0.020 (0.51)
0.195 (4.95)
D2PAK (TO-263AB)
Mounting Pad Layout
0.411 (10.45)
0.190 (4.83)
0.42 (10.66) min.
0.380 (9.65)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
K
0.33 (8.38) min.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.624 (15.85)
0.320 (8.13)
0.670 (17.02)
1
K
2
0.591 (15.00)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 26-Sep-2018
Document Number: 88671
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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DIODE 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY
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