MBRF20H200CTE3 [VISHAY]
DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode;
| 型号： | MBRF20H200CTE3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode |
| 文件： | 总4页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
TO-220AB
ITO-220AB
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
VF
2 x 10 A
200 V
3
3
2
2
290 A
1
1
MBRF20H200CT
MBR20H200CT
0.75 V
175 °C
TO-262AA
Tj
Features
• Guarding for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
3
2
1
SB20H200CT-1
PIN 1
PIN 2
CASE
PIN 3
• High frequency operation
• Solder Dip 260 °C, 40 seconds
Mechanical Data
Typical Applications
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL-94V-0 Flammability rating
For use in high frequency inverters, free wheeling and
polarity protection applications
Terminals: Matte Tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
Maximum Ratings
(TC = 25 °C, unless otherwise noted)
Parameter
Symbol
VRRM
VRWM
VDC
MBR20H200CT
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
200
200
200
V
V
Maximum average forward rectified current
Total device
Per leg
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per leg
Peak repetitive reverse current per leg at tp = 2 µs, 1 KHz
IFSM
290
A
IRRM
ERSM
EAS
1.0
20
20
25
A
Peak non-repetitive reverse surge energy per leg (8/20 µs waveform)
Non-repetitive avalanche energy per leg at 25 °C, IAS = 2.0 A, L = 10 mH
mJ
mJ
KV
Electrostatic discharge capacitor voltage
Human body model air discharge: C = 100 pF, R 0 1.5 kΩ
Voltage rate of change (rated VR)
VC
dv/dt
TJ, TSTG
VAC
10000
- 65 to + 175
1500
V/µs
°C
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
V
From terminals to heatsink t = 1 minute
Document Number 88786
26-Aug-05
www.vishay.com
1
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Electrical Characteristics
(TC = 25 °C unless otherwise noted)
Parameter
Test conditions
at IF = 10 A, TC = 25 °C
at IF = 10 A, TC = 125 °C
at IF = 20 A, TC = 25 °C
at IF = 20 A, TC = 125 °C
Symbol
VF
Typ.
Max.
Unit
V
Maximum instantaneous
forward voltage per leg(1)
0.81
0.65
0.87
0.74
0.88
0.75
0.97
0.85
Maximum reverse current per TJ = 25 °C
IR
5.0
1.0
µA
mA
leg at working peak reverse
voltage(1)
TJ = 125 °C
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
250
pF
Thermal Characteristics
(TC = 25 °C unless otherwise noted)
Parameter
Symbol
RθJC
MBR
2.0
MBRF
4.0
SB
2.0
Unit
Typical thermal resistance per leg
°C/W
Notes:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
www.vishay.com
2
Document Number 88786
26-Aug-05
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
10000
1000
25
20
TJ = 175°C
MBR, MBRB
MBRF
TJ = 125°C
TJ = 75°C
100
15
10
10
1
TJ = 25°C
5
0
0.1
0.01
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Figure 1. Forward Derating Curve (Total)
Figure 4. Typical Reverse Characteristics Per Leg
10000
350
325
300
275
250
225
200
175
1000
100
150
125
100
75
50
25
0
10
1
10
100
0.1
1
10
100
Number of Cycles at 60 HZ
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
Figure 5. Typical Junction Capacitance
100
10
1
100
TJ = 175°C
10
MBRF
TJ = 125°C
TJ = 75°C
1
MBR, MBRB
TJ = 25°C
0.1
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.1
1
10
100
t -- Pulse Duration (sec.)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Leg
Figure 6. Typical Transient Thermal Impedance Per Leg
Document Number 88786
26-Aug-05
www.vishay.com
3
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Semiconductors
Package outline dimensions in inches (millimeters)
TO-262AA
TO-220AB
0.185 (4.70)
0.169 (4.30)
0.398 (10.10)
0.382 (9.70)
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.055 (1.40)
0.039 (1.00)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.055 (1.40)
0.047 (1.20)
0.150 (3.80)
0.139 (3.54)
0.343 (8.70)
0.055 (1.40)
0.049 (1.25)
Dia.
Typ.
K
0.114 (2.90)
0.106 (2.70)
0.154 (3.90)
0.138 (3.50)
0.067
0.425 (10.80)
0.393 (10.00)
(1.70) Typ.
0.370 (9.40)
0.354 (9.00)
0.488 (12.4)
0.472 (12.00)
0.638 (16.20)
0.598 (15.20)
0.331 (8.40)
Typ.
0.634 (16.10)
0.618 (15.70)
PIN
2
0.370 (9.40)
0.354 (9.00)
1
3
PIN
0.102 (2.60)
0.087 (2.20)
1
2
3
1.161 (29.48)
1.106 (28.08)
0.118
(3.00) Typ.
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.405 (10.28)
0.389 (9.88)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.035 (0.90)
0.028 (0.70)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) Typ.
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.100
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) Typ.
(2.54) Typ.
0.200 (5.08) Typ.
ITO-220AB
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
1.21 (3.08)
0.108 (2.74)
Dia.
)
0.092 (2.34
0.138 (3.50)
0.122 (3.10)
0.270 (6.88)
0.255 (6.48)
0.633 (16.07)
0.601 (15.67)
0.630 (16.00)
0.614 (15.60)
0.320 (8.12)
0.304 (7.72)
0.264 (6.70)
0.248 (6.50)
PIN
2
1
3
0.117 (2.96)
0.101 (2.56)
0.396 (10.05)
0.372 (9.45)
0.039 (1.00)
0.024 (0.60)
0.058 (1.47) Max.
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) Typ.
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Document Number 88786
26-Aug-05
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