MBRF25H45CT/45-E3 [VISHAY]
DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode;
| 型号： | MBRF25H45CT/45-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode 整流二极管 |
| 文件： | 总4页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR25HxxCT, MBRF25HxxCT & MBRB25HxxCT Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual High-Voltage Schottky Rectifiers
Reverse Voltage 35 to 60 V
Forward Current 30 A
ITO-220AB (MBRF25HxxCT)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AB (MBR25HxxCT)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
DIA.
DIA.
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.113 (2.87)
0.103 (2.62)
0.350 (8.89)
0.330 (8.38)
0.145 (3.68)
0.135 (3.43)
PIN
2
3
1
0.603 (15.32)
0.573 (14.55)
0.191 (4.85)
0.171 (4.35)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
1
3
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
PIN 2
0.110 (2.79)
0.100 (2.54)
PIN 3
0.560 (14.22)
0.037 (0.94)
0.027 (0.69)
PIN 1
PIN 3
PIN 2
CASE
0.530 (13.46)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.36)
0.104 (2.65)
0.096 (2.45)
TO-263AB (MBRB25HxxCT)
0.205 (5.20)
0.195 (4.95)
0.411 (10.45)
0.190 (4.83)
0.380 (9.65)
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
0.245 (6.22)
MIN
Mounting Pad Layout TO-263AB
K
0.42
(10.66)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
0.33
(8.38)
Dimensions in inches
and (millimeters)
K
1
2
0-0.01 (0-0.254)
0.63
(17.02)
0.110 (2.79)
0.090 (2.29)
0.037 (0.940)
0.027 (0.686)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.08
(2.032)
0.205 (5.20)
0.195 (4.95)
0.12
(3.05)
0.24
(6.096)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss
and high efficiency
Mechanical Data
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB molded
plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250 °C/10 seconds, 0.25" (6.35 mm) from case
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
Document Number 88789
7-May-03
www.vishay.com
1
MBR25HxxCT, MBRF25HxxCT & MBRB25HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
V
V
Max.average forward rectified current
(see fig. 1)
Total device
Per leg
30
15
IF(AV)
IFRM
EAS
A
A
Peak repetitive forward current at TC = 150°C
(rated VR, 20KHz sq. wave)
30
80
Non-repetitive avalanche energy per leg
at 25°C, IAS = 4A, L = 10mH
mJ
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg
IFSM
150
A
Peak repetitive reverse surge current per leg
at tp = 2.0µs, 1KHZ
IRRM
ERSM
VC
1.0
25
0.5
20
A
Peak non-repetitive reverse energy (8/20µs waveform)
mJ
kV
Electrostatic discharge capacitor voltage
Human body model: C = 100pF, R = 1.5kΩ
25
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dv/dt
TJ
10,000
V/µs
°C
–65 to +175
TSTG
–65 to +175
°C
4500(1)
3500(2)
1500(3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH ≤ 30%
VISOL
V
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol MBR25H35CT, MBR25H45CT MBR25H50CT, MBR25H60CT
Unit
Typ
Max
Typ
Max
Maximum instantaneous
forward voltage per leg(4)
at IF = 15A
at IF = 15A
at IF = 30A
at IF = 30A
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ =125°C
–
0.50
–
0.64
0.54
0.74
0.67
–
0.56
–
0.70
0.60
0.85
0.72
VF
V
0.63
0.68
Maximum instantaneous reverse current TJ = 25°C
at rated DC blocking voltage per leg(4)
TJ =125°C
–
6.0
100
20
–
4.0
100
20
µA
mA
IR
Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
1.5
MBRF
MBRB
1.5
Unit
°C/W
Thermal resistance from junction to case per leg
RθJC
4.5
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR25H35CT – MBR25H60CT
MBRF25H35CT – MBRF25H60CT
TO-220AB
ITO-220AB
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBRB25H35CT – MBRB25H60CT
TO-263AB
www.vishay.com
2
Document Number 88789
7-May-03
MBR25HxxCT, MBRF25HxxCT & MBRB25HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 2 – Maximum Non-Repetitive
Fig. 1 – Forward Current
Derating Curve
Peak Forward Surge Current Per Leg
40
150
125
100
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
MBR, MBRB
30
MBRF
20
75
50
10
0
25
0
0
25
75
100
125
150
175
50
1
10
100
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 4 – Typical Reverse
Characteristics Per Leg
100
100
10
10
1
TJ = 150°C
TJ = 150°C
TJ = 125°C
TJ = 25°C
0.1
1
0.1
TJ = 125°C
0.01
0.001
0.0001
MBR25H35CT -- MBR25H45CT
MBR25H50CT -- MBR25H60CT
TJ = 25°C
MBR25H35CT -- MBR25H45CT
MBR25H50CT -- MBR25H60CT
0.01
0
20
40
60
80
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
10000
1000
100
10
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
1
MBR25H35CT -- MBR25H45CT
MBR25H50CT -- MBR25H60CT
0.1
0.1
1
10
100
0.01
0.1
1
10
Reverse Voltage (V)
t, Pulse Duration (sec.)
Document Number 88789
7-May-03
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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