MCL4148 [VISHAY]
Silicon Epitaxial Planar Diodes; 硅外延平面二极管
| 型号： | MCL4148 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Epitaxial Planar Diodes |
| 文件： | 总5页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCL4148.MCL4448
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Features
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices 1N4148
and 1N4448 respectively
Micro Melf package
96 12315
Applications
Extreme fast switches
Absolute Maximum Ratings
T = 25 C
j
Parameter
Repetitive peak reverse voltage
Reverse voltage
Test Conditions
Type
Symbol
V
RRM
Value
100
75
Unit
V
V
V
R
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
t =1 s
I
2
450
200
150
500
175
A
p
FSM
I
mA
mA
mA
mW
C
FRM
I
F
V =0
R
I
FAV
P
V
Junction temperature
T
j
Storage temperature range
T
stg
–65...+175
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
Symbol
R
thJA
Value
500
Unit
K/W
mounted on epoxy–glass hard tissue, Fig. 1, 35 m
2
copper clad, 0.9 mm copper area per electrode
Document Number 85566
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
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MCL4148.MCL4448
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
I =5mA
Type
Symbol Min
Typ Max Unit
Forward voltage
Reverse current
Breakdown voltage
MCL4448
MCL4148
MCL4448
V
F
V
F
V
F
0.62
0.72
1
1
V
V
V
F
I =50mA
0.86
0.93
F
I =100mA
F
V =20V
I
I
I
25
50
5
nA
A
A
R
R
V =20V, T =150 C
R
j
R
R
V =75V
R
I =100 A, t /T=0.01,
V
(BR)
100
45
V
R
p
t =0.3ms
p
Diode capacitance
Rectification efficiency
V =0, f=1MHz, V =50mV
C
D
4
pF
%
R
HF
V =2V, f=100MHz
HF
r
Reverse recovery time I =I =10mA, i =1mA
t
t
8
4
ns
ns
F
R
R
rr
I =10mA, V =6V, i =0.1xI ,
F
R
R
R
rr
R =100
L
Characteristics (Tj = 25 C unless otherwise specified)
0.71
1.3
Reflow Soldering
1.27
1.2
0.152
9.9
0.6
1.2
2.4
0.6
0.355
25
Figure 2. Recommended foot pads (in mm)
10
Wave Soldering
2.5
1.4
24
95 10329
0.7
1.4
2.8
0.7
Figure 1. Board for R
definition (in mm)
Figure 3. Recommended foot pads (in mm)
thJA
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Document Number 85566
Rev. 3, 01-Apr-99
MCL4148.MCL4448
Vishay Telefunken
1000
100
10
1000
100
10
LL 4148
T =25°C
j
Scattering Limit
Scattering Limit
1
T =25°C
j
1
0.1
100
2.0
1
10
V – Reverse Voltage ( V )
R
0
0.4
0.8
1.2
1.6
94 9098
94 9096
V – Forward Voltage ( V )
F
Figure 4. Forward Current vs. Forward Voltage
Figure 6. Reverse Current vs. Reverse Voltage
1000
3.0
LL 4448
100
f=1MHz
2.5
T =25°C
j
2.0
1.5
1.0
0.5
0
Scattering Limit
10
1
T =25°C
j
0.1
2.0
100
0
0.4
0.8
1.2
1.6
0.1
1
10
V – Reverse Voltage ( V )
R
94 9097
V – Forward Voltage ( V )
94 9099
F
Figure 5. Forward Current vs. Forward Voltage
Figure 7. Diode Capacitance vs. Reverse Voltage
Document Number 85566
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
MCL4148.MCL4448
Vishay Telefunken
Dimensions in mm
96 12072
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Document Number 85566
Rev. 3, 01-Apr-99
MCL4148.MCL4448
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85566
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
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