MCT272 [VISHAY]

Optocoupler, Phototransistor Output, With Base Connection; 光电耦合器,光电晶体管输出,带底座的连接
MCT272
型号: MCT272
厂家: VISHAY    VISHAY
描述:

Optocoupler, Phototransistor Output, With Base Connection
光电耦合器,光电晶体管输出,带底座的连接

晶体 光电 晶体管 光电晶体管
文件: 总9页 (文件大小:202K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7  
VISHAY  
Vishay Semiconductors  
Optocoupler, Phototransistor Output, With Base Connection  
Features  
• Interfaces with common logic families  
• Input-output coupling capacitance < 0.5 pF  
1
6
A
C
B
C
E
• Industry Standard Dual-in line 6-pin package  
• 5300 VRMS isolation test voltage  
5
4
2
3
NC  
Agency Approvals  
• UL - File No. E52744 System Code H or J  
• DIN EN 60747-5-2(VDE0884)  
DIN EN 60747-5-5 pending  
Available with Option 1  
i179004  
• CSA 93751  
These isolation processes and the Vishay ISO9001  
quality program results in the highest isolation perfor-  
mance available for a commercial plastic phototrans-  
istor optocoupler.  
• BSI IEC60950 IEC60965  
Applications  
AC mains detection  
Reed relay driving  
Switch mode power supply feedback  
Telephone ring detection  
Logic ground isolation  
The devices are available also in lead formed config-  
uration suitable for surface mounting and are avail-  
able either on tape and reel, or in standard tube  
shipping containers.  
Order Information  
Logic coupling with high frequency noise rejection  
Part  
Remarks  
For additional design information see Application  
Note 45  
MCT270  
CTR > 50 %, DIP-6  
MCT271  
CTR 45 - 90 %, DIP-6  
MCT272  
CTR 75 - 150 %, DIP-6  
CTR 125 - 250 %, DIP-6  
CTR 225 - 400 %, DIP-6  
CTR 70 - 210 %, DIP-6  
CTR 15 - 60 %, DIP-6  
Description  
The MCT27x family is an Industry Standard Single  
Channel Phototransistor Couplers. It includes the  
MCT270/ 271/ 272/ 273/ 274/ 275/ 276/ 277 couplers.  
Each optocoupler consists of gallium arsenide infra-  
red LED and a silicon NPN phototransistor.  
MCT273  
MCT274  
MCT275  
MCT276  
MCT277  
CTR > 100 %, DIP-6  
These couplers are Underwriters Laboratories (UL)  
listed to comply with a 5300 VRMS isolation test volt-  
age.  
MCT270-X009  
MCT277-X009  
CTR > 50 %, SMD-6 (option 9)  
CTR > 100 %, SMD-6 (option 9)  
For additional information on the available options refer to  
Option Information.  
This isolation performance is accomplished through  
Vishay double molding isolation manufacturing pro-  
cess. Compliance to DIN EN 60747-5-2(VDE0884)/  
DIN EN 60747-5-5 pending partial discharge isolation  
specification is available by ordering option 1.  
Document Number 83724  
Rev. 1.4, 19-Apr-04  
www.vishay.com  
1
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7  
Vishay Semiconductors  
VISHAY  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is  
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
Maximum Rating for extended periods of the time can adversely affect reliability.  
Input  
Parameter  
Test condition  
Symbol  
Value  
6.0  
Unit  
V
Reverse voltage  
V
R
Forward current  
Surge current  
I
60  
2.5  
100  
mA  
A
F
t < 10 µs  
I
FSM  
Power dissipation  
P
mW  
diss  
Output  
Parameter  
Test condition  
Symbol  
Value  
70  
Unit  
V
Collector-emitter breakdown voltage  
V
CEO  
Emitter-base breakdown voltage  
Collector current  
7.0  
50  
V
I
I
mA  
C
t < 1.0 ms  
100  
150  
mA  
C
Power dissipation  
P
mW  
diss  
Coupler  
Parameter  
Test condition  
Symbol  
Value  
5300  
Unit  
Isolation test voltage  
V
V
ISO  
RMS  
mm  
mm  
mm  
Creepage  
Clearance  
7.0  
7.0  
0.4  
Isolation thickness between  
emitter and detector  
Comparative tracking index per  
DIN IEC 112/VDE0303,part 1  
175  
12  
Isolation resistance  
V
V
= 500 V, T  
= 25 °C  
R
IO  
IO  
amb  
IO  
IO  
10  
11  
= 500 V, T  
= 100 °C  
R
amb  
10  
Storage temperature  
Operating temperature  
Junction temperature  
Soldering temperature  
T
- 55 to + 150  
- 55 to + 100  
100  
°C  
°C  
°C  
°C  
amb  
T
amb  
T
j
max. 10 s dip soldering:  
distance to seating plane  
1.5mm  
T
260  
sld  
www.vishay.com  
2
Document Number 83724  
Rev. 1.4, 19-Apr-04  
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7  
VISHAY  
Vishay Semiconductors  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering  
evaluation. Typical values are for information only and are not part of the testing requirements.  
Input  
Parameter  
Test condition  
= 20 mA  
Symbol  
Min  
Typ.  
25  
Max  
1.5  
Unit  
V
Forward voltage  
I
V
F
F
Reverse current  
Capacitance  
V
V
= 3.0 V  
I
10  
µA  
R
R
R
= 0, f = 1.0 MHz  
C
pF  
O
Output  
Parameter  
Test condition  
Symbol  
Min  
30  
Typ.  
Max  
Unit  
V
Collector-emitter breakdown  
voltage  
I
= 10 µA, I = 0 mA  
BV  
C
F
CEO  
Emitter-collector breakdown  
voltage  
I
I
= 10 µA, I = 0 mA  
BV  
7.0  
70  
V
V
E
C
F
ECO  
Collector-base breakdown  
voltage  
= 10 µA, I = 0 mA  
BV  
F
CBO  
Collector-emitter leakage  
current  
V
= 10 V, I = 0 mA  
I
CEO  
50  
nA  
CE  
F
Coupler  
Parameter  
Test condition  
= 500 VDC  
Symbol  
Min  
Typ.  
Max  
0.4  
Unit  
12  
Resistance, input to output  
V
R
C
IO  
IO  
IO  
10  
Capacitance (input-output)  
0.5  
pF  
V
Collector-emitter saturation  
voltage  
I
= 2.0 mA, I = 16 mA  
V
CEsat  
CE  
F
Current Transfer Ratio  
Parameter  
Test condition  
Part  
Symbol  
Min  
50  
Typ.  
Max  
Unit  
%
DC Current Transfer Ratio  
V
= 10 V, I = 10 mA  
MCT270  
CTR  
CTR  
CTR  
CTR  
CTR  
CTR  
CTR  
CTR  
CTR  
CE  
F
DC  
DC  
DC  
DC  
DC  
DC  
DC  
DC  
CE  
MCT271  
MCT272  
MCT273  
MCT274  
MCT275  
MCT276  
MCT277  
MCT271  
45  
75  
90  
150  
250  
400  
210  
60  
%
%
%
%
%
%
%
%
125  
225  
70  
15  
100  
12.5  
Current Transfer Ratio  
(collector-emitter)  
V
= 0.4 V, I = 16 mA  
CE F  
MCT272  
MCT273  
MCT274  
MCT275  
MCT276  
MCT277  
CTR  
CTR  
CTR  
CTR  
CTR  
CTR  
12.5  
12.5  
12.5  
12.5  
12.5  
40  
%
%
%
%
%
%
CE  
CE  
CE  
CE  
CE  
CE  
Document Number 83724  
Rev. 1.4, 19-Apr-04  
www.vishay.com  
3
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7  
Vishay Semiconductors  
VISHAY  
Switching Characteristics  
Parameter  
Test condition  
Part  
Symbol  
Min  
Typ.  
Max  
10  
Unit  
Switching time  
I
= 2.0 mA, R = 100 , V = 5.0 V  
MCT270  
t
t
t
t
t
t
t
t
, t  
µs  
C
L
CE  
on off  
MCT271  
MCT272  
MCT273  
MCT274  
MCT275  
MCT277  
MCT276  
, t  
7.0  
10  
20  
25  
15  
15  
3.5  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
on off  
, t  
on off  
, t  
on off  
, t  
on off  
, t  
on off  
, t  
on off  
, t  
on off  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
1.5  
1.0  
0.5  
0.0  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
F
A
T
= –55°C  
= 25°C  
CTRce(sat) Vce=0.4 V  
A
T
A
T =50°C  
A
T
= 85°C  
A
NCTR(SAT)  
NCTR  
.1  
1
10  
100  
.1  
1
10  
100  
I - LED Current - mA  
F
I
- Forward Current - mA  
F
i4n25_01  
i4n25_03  
Fig. 1 Forward Voltage vs. Forward Current  
Fig. 3 Normalized Non-saturated and Saturated CTR vs. LED  
Current  
1.5  
1.5  
Normalized to:  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
Vce=10 V, I =10 mA, T =25°C  
F
A
F
A
CTRce(sat) Vce=0.4 V  
CTRce(sat) Vce=0.4 V  
1.0  
0.5  
0.0  
1.0  
0.5  
0.0  
T =70°C  
A
T =25°C  
A
NCTR(SAT)  
NCTR  
NCTR(SAT)  
NCTR  
.1  
1
10  
100  
0
1
10  
100  
I
- LED Current - mA  
F
I
- LED Current - mA  
F
i4n25_02  
i4n25_04  
Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED  
Current  
Fig. 4 Normalized Non-saturated and saturated CTR vs. LED  
Current  
www.vishay.com  
4
Document Number 83724  
Rev. 1.4, 19-Apr-04  
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7  
VISHAY  
Vishay Semiconductors  
1.5  
1.5  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
CTRce(sat) Vce = 0.4 V  
Normalized to:  
F
A
Vcb=9.3 V, I =10 mA, T =25°C  
F
A
1.0  
0.5  
0.0  
1.0  
0.5  
0.0  
T =85°C  
A
25°C  
50°C  
70°C  
NCTR(SAT)  
NCTR  
.1  
1
10  
100  
.1  
1
10  
I - LED Current - mA  
F
100  
I
- LED Current - mA  
F
i4n25_05  
i4n25_08  
Fig. 5 Normalized Non-saturated and saturated CTR vs. LED  
Current  
Fig. 8 Normalized CTRcb vs. LED Current and Temp.  
35  
30  
10  
Normalized to:  
I =10 mA, T =25°C  
F
A
25  
50°C  
1
0.1  
20  
70°C  
15  
25°C  
85°C  
10  
5
Nib, T =–20°C  
A
Nib, T = 25°C  
A
Nib, T = 50°C  
A
0
Nib, T = 70°C  
A
0
10  
20  
30  
40  
50  
60  
0.01  
.1  
1
10  
100  
I
- LED Current - mA  
F
i4n25_06  
i4n25_09  
I
- LED Current - mA  
F
Fig. 6 Collector-Emitter Current vs. Temperature and LED  
Current  
Fig. 9 Normalized Photocurrent vs. I and Temp.  
F
5
1.2  
10  
70°C  
4
10  
1.0  
3
10  
25°C  
2
–20°C  
0.8  
10  
1
0
V
= 10 V  
ce  
10  
10  
10  
10  
Normalized to:  
Typical  
Ib=20 µA, Vce=10 V, T =25°C  
A
0.6  
0.4  
–1  
–2  
–20  
0
T
20  
40  
60  
80  
100  
1
10  
100  
1000  
- Ambient Temperature - °C  
A
Ib - Base Current - µA  
i4n25_07  
i4n25_10  
Fig. 7 Collector-Emitter Leakage Current vs.Temp.  
Fig. 10Normalized Non-saturated HFE vs. Base Current and  
Temperature  
Document Number 83724  
Rev. 1.4, 19-Apr-04  
www.vishay.com  
5
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7  
Vishay Semiconductors  
VISHAY  
1.5  
Normalized to:  
Vce=10 V, Ib=20 µA  
V
= 5.0 V  
CC  
50°C  
T
=25°C  
A
70°C  
25°C  
1.0  
F=10 KHz,  
DF=50%  
R
L
V
–20°C  
O
0.5  
0.0  
I
=1 0 mA  
F
Vce=0.4  
V
1
10  
100  
1000  
i4n25_11  
i4n25_14  
Ib - Base Current - µA  
Fig. 11Normalized HFE vs. Base Current and Temp.  
Fig. 14Switching Schematic  
1000  
2.5  
2.0  
I
V
=10 mA,T =25°C  
A
CC  
F
=5.0 V, Vth=1.5 V  
t
PHL  
100  
10  
1.5  
1.0  
t
PLH  
1
.1  
1
10  
100  
RL - Collector Load Resistor - k  
i4n25_12  
Fig. 12Propagation Delay vs. Collector Load Resistor  
IF  
tD  
tR  
VO  
tPLH  
=1.5 V  
VTH  
tF  
tS  
tPHL  
i4n25_13  
Fig. 13Switching Timing  
www.vishay.com  
6
Document Number 83724  
Rev. 1.4, 19-Apr-04  
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7  
VISHAY  
Vishay Semiconductors  
Package Dimensions in Inches (mm)  
pin one ID  
2
1
3
.248 (6.30)  
.256 (6.50)  
ISO Method A  
4
5
6
.335 (8.50)  
.343 (8.70)  
.300 (7.62)  
typ.  
.048 (0.45)  
.022 (0.55)  
.039  
(1.00)  
Min.  
.130 (3.30)  
.150 (3.81)  
18°  
4°  
.114 (2.90)  
.130 (3.0)  
typ.  
.031 (0.80) min.  
3°–9°  
.010 (.25)  
typ.  
.031 (0.80)  
.035 (0.90)  
.018 (0.45)  
.022 (0.55)  
.300–.347  
(7.62–8.81)  
.100 (2.54) typ.  
i178004  
Package Dimensions in Inches (mm)  
S MD  
.343 (8.71)  
Pin one I.D.  
.335 (8.51)  
.030 (.76)  
R .010 (.25)  
.256 (6.50)  
.248 (6.30)  
.100 (2.54)  
.070 (1.78)  
.315 (8.00) min  
.435 (11.05)  
.060 (1.52)  
.050 (1.27) typ.  
.395 (10.03)  
.375 (9.63)  
ISO Method A  
.052 (1.33)  
.048 (1.22)  
.300 (7.62)  
typ.  
3° to 7°  
.039  
(0.99)  
min.  
.150 (3.81)  
.130 (3.30)  
.0098 (.25)  
.0040 (.10)  
18°  
4°  
.012 (0.31)  
.008 (0.20)  
.040 (1.016)  
.020 (0.508)  
.100 (2.54)  
.315 (8.00)  
min.  
i178002  
Document Number 83724  
Rev. 1.4, 19-Apr-04  
www.vishay.com  
7
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7  
Vishay Semiconductors  
VISHAY  
Option 9  
.375 (9.53)  
.395 (10.03)  
.300 (7.62)  
ref.  
.0040 (.102)  
.0098 (.249)  
.012 (.30) typ.  
.020 (.51)  
.040 (1.02)  
15° max.  
18449  
.315 (8.00)  
min.  
www.vishay.com  
8
Document Number 83724  
Rev. 1.4, 19-Apr-04  
MCT270/ 1/ 2/ 3/ 4/ 5/ 6/ 7  
VISHAY  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 83724  
Rev. 1.4, 19-Apr-04  
www.vishay.com  
9

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