MCT6-X009 [VISHAY]
Optocoupler, Phototransistor Output, Dual Channel; 光电耦合器，光电晶体管输出，双通道
| 型号： | MCT6-X009 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output, Dual Channel |
| 文件： | 总7页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ILCT6/ MCT6
Vishay Semiconductors
Optocoupler, Phototransistor Output, Dual Channel
Features
• Current Transfer Ratio, 50 % Typical
• Leakage Current, 1.0 nA Typical
• Two Isolated Channels Per Package
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1
2
3
4
8
7
6
5
A
C
C
A
E
C
C
E
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
Pb
e3
i179016
Pb-free
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
can also be used to replace relays and transformers
in many digital interface applications, as well as ana-
log applications such as CRT modulation.
• CSA 93751
• BSI IEC60950 IEC60065
Order Information
Part
Remarks
Description
ILCT6
MCT6
CTR ≥ 20 %, DIP-8
The ILCT6/ MCT6 is a two channel optocoupler for
high density applications. Each channel consists of
an optically coupled pair with a Gallium Arsenide
infrared LED and a silicon NPN phototransistor. Sig-
nal information, including a DC level, can be transmit-
ted by the device while maintaining a high degree of
electrical isolation between input and output.
The ILCT6/ MCT6 is especially designed for driving
medium-speed logic, where it may be used to elimi-
nate troublesome ground loop and noise problems. It
CTR ≥ 20 %, DIP-8
ILCT6-X007
ILCT6-X009
MCT6-X007
MCT6-X009
CTR ≥ 20 %, SMD-8 (option 7)
CTR ≥ 20 %, SMD-8 (option 9)
CTR ≥ 20 %, SMD-8 (option 7)
CTR ≥ 20 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
60
Unit
mA
A
Rated forward current, DC
Peak forward current, DC
1.0 µs pulse, 300 pps
IFM
3.0
Power dissipation
Pdiss
100
1.3
mW
Derate linearly from 25 °C
mW/°C
Document Number 83645
Rev. 1.4, 26-Oct-04
www.vishay.com
1
ILCT6/ MCT6
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
IC
Value
30
Unit
mA
Collector current
Collector-emitter breakdown voltage
Power dissipation
BVCEO
Pdiss
30
150
2
V
mW
Derate linearly from 25 °C
mW/°C
Coupler
Parameter
Test condition
Symbol
VISO
Value
5300
Unit
Isolation test voltage
VRMS
≥ 1012
Isolation resistance
VIO = 500 V, Tamb = 25 °C
IO = 500 V, Tamb = 100 °C
RIO
RIO
Ω
Ω
≥ 1011
≥ 7.0
≥ 7.0
400
V
Creepage
mm
mm
mW
Clearance
Total package dissipation
Ptot
Derate linearly from 25 °C
Storage temperature
5.33
mW/°C
°C
Tstg
- 55 to + 150
Operating temperature
Tamb
- 55 to + 100
10
°C
Lead soldering time at 260 °C
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 20 mA
R = 3.0 V
VF = 0 V
Symbol
VF
Min
Typ.
1.25
Max
1.50
Unit
V
Forward voltage
Reverse current
V
IR
Cj
0.1
25
10
µA
Junction capacitance
pF
Output
Parameter
Test condition
IC = 10 µA, IE = 10 µA
Symbol
BVCEO
Min
30
Typ.
65
Max
100
Unit
V
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
I
C = 10 µA, IE = 10 µA
BVECO
ICEO
7.0
10
1.0
8.0
V
nA
pf
Collector-emitter leakage
current
VCE = 10 V
VCE = 0 V
Collector-emitter capacitance
CCE
www.vishay.com
2
Document Number 83645
Rev. 1.4, 26-Oct-04
ILCT6/ MCT6
Vishay Semiconductors
Coupler
Parameter
Test condition
Symbol
VCEsat
Min
Typ.
Max
0.40
Unit
V
Saturation voltage, collector-
emitter
IC = 2.0 mA, IF = 16 mA
Capacitance (input-output)
f = 1.0 MHz
CIO
0.5
pF
Capacitance between channels f = 1.0 MHz
Bandwidth IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω
0.4
pF
150
kHz
Current Transfer Ratio
Parameter
Test condition
Symbol
CTRDC
Min
20
Typ.
50
Max
Max
Unit
%
DC Current Transfer Ratio
IF = 10 mA, VCE = 10 V
Switching Characteristics
Parameter
Test condition
Symbol
Min
Typ.
3.0
Unit
Switching times, output
transistor
IC = 2.0 mA, RE = 100 Ω,
VCE = 10 V
t
on, toff
µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.4
1.5
Normalized to:
= 10 V, I = 10 mA
1. 3
V
CE
= 25°C
F
Ta = –55°C
Ta = 25°C
T
A
1.2
1.1
1.0
CTRce(sat) V
= 0.4 V
CE
1.0
0.9
0.5
0.0
NCTR(SAT)
NCTR
Ta = 85°C
0.8
0.7
.1
1
10
100
.1
1
10
100
IF - Forward Current - mA
I
- LED Current - mA
F
iilct6_01
iilct6_02
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Document Number 83645
Rev. 1.4, 26-Oct-04
www.vishay.com
3
ILCT6/ MCT6
Vishay Semiconductors
1.5
35
30
25
Normalized to:
V
= 10 V, I = 10 mA, T = 25°C
ˇ
CE
CTRce(sat) V
F
A
= 0.4 V
CE
50°C
1.0
0.5
0.0
T
= 50°C
A
20
15
70°C
25°C
85°C
10
NCTR(SAT)
NCTR
5
0
.1
1
10
100
0
10
20
30
40
50
60
I
- LED Current - mA
F
I
- LED Current - mA
F
iilct6_03
iilct6_06
Figure 3. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 6. Collector-Emitter Current vs. Temperature and LED
Current
1.5
5
10
Normalized to:
4
10
V
= 10 V, I = 10 mA
CE
= 25°C
F
T
A
3
10
1.0
0.5
0.0
CTRce(sat) V
CE
= 0.4 V
2
10
T
= 70°C
A
Vce = 10 V
1
10
Typical
0
10
NCTR(SAT)
NCTR
-1
10
-2
-20
10
0
20
40
60
80
100
.1
1
10
- LED Current - mA
100
T
- Ambient Temperature - °C
A
I
F
iilct6_04
iilct6_07
Figure 4. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 7. Collector-Emitter Leakage Current vs.Temp.
1000
1.5
2.5
2.0
Normalized to:
Ta = 25°C, IF = 10 mA
Vcc = 5 V, Vth = 1.5 V
V
= 10 V, I = 10 mA, T = 25°C
F A
CE
CTRce(sat) V
= 0.4 V
CE
tpHL
1.0
0.5
0.0
100
T
= 85°C
A
10
1
1.5
1.0
NCTR(SAT)
NCTR
tpLH
.1
1
10
100
.1
1
10
100
I
- LED Current - mA
F
R
- Collector Load Resistor - kΩ
L
iilct6_05
iilct6_08
Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 8. Propagation Delay vs. Collector Load Resistor
www.vishay.com
4
Document Number 83645
Rev. 1.4, 26-Oct-04
ILCT6/ MCT6
Vishay Semiconductors
I
F
V
= 5 V
CC
I
= 10 mA
F
t
PHL
V
O
t
PLH
R
= 75 Ω
F = 10 KHz,
L
V
O
D
= 50%
F
t
S
50%
iilct6_10
t
F
t
t
R
iilct6_09
D
Figure 9. Switching Timing
Figure 10. Switching Schematic
Package Dimensions in Inches (mm)
pin one ID
4
5
3
6
1
8
2
7
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
typ.
.031 (0.79)
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
Document Number 83645
Rev. 1.4, 26-Oct-04
www.vishay.com
5
ILCT6/ MCT6
Vishay Semiconductors
Option 7
Option 9
.300 (7.62)
TYP.
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.331 (8.4)
MIN.
15° max.
18494
.315 (8.00)
min.
.406 (10.3)
MAX.
www.vishay.com
6
Document Number 83645
Rev. 1.4, 26-Oct-04
ILCT6/ MCT6
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83645
Rev. 1.4, 26-Oct-04
www.vishay.com
7
相关型号：
©2020 ICPDF网 联系我们和版权申明