MMBZ15VDA-V-GS18 [VISHAY]

Trans Voltage Suppressor Diode, 12.8V V(RWM), Bidirectional,;


型号：	MMBZ15VDA-V-GS18
厂家：	VISHAY
描述：	Trans Voltage Suppressor Diode, 12.8V V(RWM), Bidirectional, 二极管
文件：	总4页 (文件大小：197K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMBZ...VDA-V

Vishay Semiconductors

Small Signal Zener Diodes, Dual

Features

• Dual Silicon Planar Zener Diodes with

Common Cathode or Common Anode

configurations.

• Dual package provides for Bidirectional or

separate unidirectional configurations.

MMBZ15VDA

MMBZ27VDA

• The dual configurations protect two separate lines

with only one device.

• Peak Power: 40 W @1 ms (Bidirectional) .

• For bidirectional operation, circuit connected to

pins 1 and 2. For unidirectional operation, circuit

connected to pins 1 and 3 or pins 2 and 3.

Common Anode

19798

• Lead (Pb)-free component

• Component in accordance to

Marking:

RoHS 2002/95/EC and WEEE 2002/96/EC

MMBZ15VDA-V = TA5

MMBZ27VDA-V = TA7

Mechanical Data

Case: SOT-23 Plastic case

Weight: approx. 8.8 mg

Terminals: Solderable per MIL-STD-750,

method 2026

Packaging Codes/Options:

GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box

GS08/ 3 k per 7 " reel (8 mm tape), 15 k/box

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Peak power dissipation¹⁾

Test condition

Symbol

P_PK

Value

Unit

Power dissipation

on FR-5 Board²⁾

T_amb= 25 °C

P_tot

225

1.8

mW/°C

Derate above 25 °C

Power dissipation

on Alumina Substrate³⁾

T_amb= 25 °C

P_tot

300

2.4

mW/°C

Derate above 25 °C

¹⁾Nonrepetitive current pulse per Figure 2 and derate above T_amb= 25 °C per Figure 3.

²⁾FR-5 = 1.0 x 0.75 x 0.62 in.

³⁾Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina.

Document Number 85808

Rev. 1.4, 28-Oct-05

www.vishay.com

MMBZ...VDA-V

Vishay Semiconductors

Thermal Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

R_thJA

Value

Unit

Thermal resistance junction to ambiant air

556

°C/W

Operating and storage temperature range

T_j, T_stg

- 55 to + 150

°C

Electrical Characteristics

Partnumber

Breakdown

Voltage¹⁾

Test

Current

Working

Peak

Reverse

Voltage

Max.

Reverse

Surge

Max. Reverse

Max.

Temperature

Coefficient

Max. Forward

Reverse

Leakage

Current

Voltage

(Clamping

Voltage)

Voltage

Current

V_BRat I_T

I_T

V_RWM

I_R

I_PP

at V_BR

mV/°C

V_F

@ I_F

V_C@ I_RSM

min

max

MMBZ15VDA-V 14.30 15.80

MMBZ27VDA-V 25.65 28.35

1.0

12.8

22.0

100

1.9

1.0

21.2

38.0

0.9

1.1

200

Note:

measured at pulse test current I_Tat an ambient temperature of 25 °C

²⁾Surge current waveform per Figure 2 and derate per Figure 3

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

300

Pulse width (tp) is defined

as that point where the

peak current decays to

250

200

150

100

ALUMINA SUBSTRATE

50 % of I

tr ≤ 10 µs

Peak Value - I

RSM

100

RSM

Half Value -

FR-5 BOARD

100

T, Temperature( °C)

175

t, Time (ms)

125

150

18656

18655

Figure 1. Steady State Power Derating Curve

Figure 2. Pulse Waveform

www.vishay.com

Document Number 85808

Rev. 1.4, 28-Oct-05

MMBZ...VDA-V

Vishay Semiconductors

100

200

100 125

175

150

Ambient Temperature (°C)

18657

Figure 3. Pulse Derating Curve

Package Dimensions in mm (Inches)

0.175 (.007)

0.098 (.005)

0.1 (.004) max.

2.6 (.102)

2.35 (.092)

0.4 (.016)

ISO Method E

3.1 (.122)

Mounting Pad Layout

2.8 (.110)

0.52 (0.020)

0.4 (.016)

0.9 (0.035)

2.0 (0.079)

0.95 (.037)

0.95 (0.037)

17418

Document Number 85808

Rev. 1.4, 28-Oct-05

www.vishay.com

MMBZ...VDA-V

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

www.vishay.com

Document Number 85808

Rev. 1.4, 28-Oct-05

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