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MMBZ27VDA/E9 [VISHAY]

Trans Voltage Suppressor Diode, 40W, 22V V(RWM), Unidirectional, 2 Element, Silicon, TO-236AB;
MMBZ27VDA/E9
型号： MMBZ27VDA/E9
厂家： VISHAY    VISHAY
描述：

Trans Voltage Suppressor Diode, 40W, 22V V(RWM), Unidirectional, 2 Element, Silicon, TO-236AB

光电二极管 瞬态抑制器
文件： 总2页 (文件大小：34K)
中文：  中文翻译
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MMBZ6V8DC/A thru MMBZ27VDC/A  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Dual Zener Transient Voltage Suppressor  
Diodes for ESD Protection  
TO-236AB (SOT-23)  
.122 (3.1)  
.110 (2.8)  
Mounting Pad Layout  
.016 (0.4)  
Top View  
0.031 (0.8)  
3
0.035 (0.9)  
0.079 (2.0)  
1
2
Dimensions in inches  
and (millimeters)  
.037(0.95)  
.037(0.95)  
0.037 (0.95)  
0.037 (0.95)  
Marking:  
.102 (2.6)  
.094 (2.4)  
MMBZ15VDA = TA5  
MMBZ27VDA = TA7  
MMBZ6V8DA = ?  
MMBZ15VDC = TC5  
MMBZ27VDC = TC7  
MMBZ6V8DC = ?  
.016 (0.4) .016 (0.4)  
MMBZ15VDC  
MMBZ27VDC  
MMBZ15VDA  
MMBZ27VDA  
Features  
• Dual Silicon Planar Zener Diodes with Common  
Cathode or Common Anode configurations.  
Top  
View  
• Dual package provides for Bidirectional or  
separate unidirectional configurations.  
Common Anode  
Common Cathode  
• The dual configurations protect two separate lines  
with only one device.  
Mechanical Data  
Case: SOT-23 Plastic Package  
• Peak Power: 40 watts @1ms (Bidirectional) .  
• High temperature Soldering Guaranteed:  
230˚C for 10 seconds.  
Weight: approx. 0.008g  
Terminals: Solderable per MIL-STD-750, method 2026  
• Ideal for ESD Protection.  
Packaging Codes/Options:  
E8/10K per 13” reel (8mm tape)  
E9/3K per 7” reel (8mm tape)  
• For bidirectional operation, circuit connected to  
pins 1 and 2. For unidirectional operation, circuit  
connected to pins 1 and 3 or pins 2 and 3.  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Peak Power Dissipation(1) @ TA≤ 25˚C  
Ppk  
40(4)  
W
Total Power Dissipation  
at TA = 25°C  
Derate above 25˚C  
225  
1.8  
mW  
mW/˚C  
PD  
PD  
on FR-5 Board(2  
)
Total Power Dissipation  
on Alumina Substrate(3)  
at TA = 25°C  
Derate above 25˚C  
300  
2.4  
mW  
mW/˚C  
Thermal Resistance Junction to Ambient Air  
Operating and Storage Temperature Range  
RΘJA  
556  
°C/W  
°C  
TJ, Tstg  
–55 to +150  
Notes:  
(1) Nonrepetitive current pulse per Figure 2 and derate above TA = 25°C per Figure 3.  
(2) FR-5 = 1.0 x 0.75 x 0.62 in.  
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina.  
(4) The MMBZ6V8DC/A is rated at 24V  
Document Number 88358  
21-May-02  
www.vishay.com  
1
MMBZ6V8DC/A thru MMBZ27VDC/A  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics (TJ = 25°C unless otherwise noted)  
Breakdown Voltage  
Max Forward  
Voltage  
Max Reverse  
Working  
Peak  
Reverse  
Voltage  
Voltage  
Max  
Reverse  
Leakage  
Max  
Reverse  
Surge  
(2)  
(Volts)(1)  
Max  
Temperature  
Coefficient of  
@ I  
RSM  
V
BR  
(Clamping Voltage)  
V
@I  
V
F
@I  
F
C
T
V
RWM  
Current I Current I  
R PP  
Type  
MMBZ6V8D  
MMBZ15VD  
MMBZ27VD  
Min  
6.48  
Nom  
6.8  
Max  
7.14  
mA  
1.0  
1.0  
1.0  
(Volts)  
(Volts)  
V
(mV/°C) (Volts) (mA)  
BR  
(nA)  
(Amps)  
4.5  
500  
2.5  
9.6  
3.4  
16  
30  
1.1  
0.9  
1.1  
200  
200  
200  
14.30  
25.65  
15.00  
27.00  
15.80  
28.35  
12.8  
22.0  
100  
80  
1.9  
1.0  
21.2  
38.0  
Notes: (1) VBR measured at pulse test current IT at an ambient temperature of 25°C  
(2) Surge current waveform per Figure 2 and derate per Figure 3  
Ratings and  
Characteristic Curves(TA = 25°C unless otherwise noted)  
FIG. 1 - STEADY STATE POWER DERATING CURVE  
300  
250  
200  
150  
100  
50  
Layout for R  
Thickness: Fiberglass 0.059 in (1.5 mm)  
Copper leads 0.012 in. (0.3mm)  
test  
ΘJA  
ALUMINA SUBSTRATE  
0.30 (7.5)  
0.12 (3)  
.04 (1)  
.08 (2)  
.04 (1)  
FR-5 BOARD  
.08 (2)  
0.59 (15)  
0.03 (0.8)  
0.47 (12)  
0.2 (5)  
0
0
25  
50  
75  
100  
125  
150  
175  
T, Temperature (°C)  
0.06 (1.5)  
Dimensions in inches (millimeters)  
0.20 (5.1)  
FIG. 2 - PULSE WAVEFORM  
FIG. 3 - PULSE DERATING CURVE  
100  
75  
PULSE WIDTH (tp) is DEFINED  
as that POINT WHERE the PEAK  
CURRENT DECAYS to 50% of  
t
r
I
tr≤10µs  
RSM  
PEAK VALUE – I  
RSM  
100  
50  
HALF VALUE – I  
RSM  
2
50  
25  
tp  
0
0
0
2
4
1
3
0
25  
50  
75  
100 125 150 175 200  
t, TIME (ms)  
TA, AMBIENT TEMPERATURE (°C)  
www.vishay.com  
2
Document Number 88358  
21-May-02  

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