MMBZ5257-GS08 [VISHAY]
DIODE 33 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Voltage Regulator Diode;
| 型号： | MMBZ5257-GS08 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 33 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Voltage Regulator Diode |
| 文件： | 总5页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZ5225 to MMBZ5267
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes.
3
• Standard Zener voltage tolerance is 5 % with a
"B" suffix, suffix “C” is 2 % tolerance.
• High temperature soldering guaranteed:
250 °C/10 seconds at terminals.
1
2
18078
• These diodes are also available in MiniMELF case
with the type designation ZMM5225...ZMM5267,
SOD-123 case with the type designation
MMSZ5225... MMSZ5267.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Zener current (see Table
"Characteristics")
2251)
3002)
Power dissipation
TA = 25 °C
Ptot
Ptot
mW
mW
1) On FR - 5 board using recommended solder pad layout
2) On alumina substrate
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Value
5561)
Unit
Thermal resistance junction to
ambient air
°C/W
Maximum junction temperature
Storage temperature range
Tj
150
°C
°C
TS
-65 to + 175
1) On FR - 5 board using recommended solder pad layout
Document Number 85772
Rev. 1.3, 08-Nov-04
www.vishay.com
1
MMBZ5225 to MMBZ5267
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 ° unless otherwise noted
Maximum VF = 0.9 V at IF = 10 mA
Partnumber
Marking
Code
Nominal
Zener
Voltage
Test
Current
Maximum Dynamic
Impedance2)
Typical
Temp.
of
Maximum Reverse
Leakage Current
Coefficient
VZ @ IZT1
IZT1
ZZT @ IZT
ZZK @ IZK
αVZ
IR
VR
V
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
Ω
30
28
24
23
22
19
17
11
7
Ω
%/°C
-0.075
-0.07
-0.065
-0.06
-0.055
0.030
0.030
0.038
0.038
0.045
0.05
µA
50
25
15
10
5
V
1
MMBZ5225
MMBZ5226
MMBZ5227
MMBZ5228
MMBZ5229
MMBZ5230
MMBZ5231
MMBZ5232
MMBZ5233
MMBZ5234
MMBZ5235
MMBZ5236
MMBZ5237
MMBZ5238
MMBZ5239
MMBZ5240
MMBZ5241
MMBZ5242
MMBZ5243
MMBZ5244
MMBZ5245
MMBZ5246
MMBZ5247
MMBZ5248
MMBZ5249
MMBZ5250
MMBZ5251
MMBZ5252
MMBZ5253
MMBZ5254
MMBZ5255
MMBZ5256
MMBZ5257
MMBZ5258
MMBZ5259
MMBZ5260
MMBZ5261
MMBZ5262
MMBZ5263
MMBZ5264
MMBZ5265
MMBZ5266
MMBZ5267
18E
8A
3
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
1
8B
1
8C
1
8D
1
8E
5
2
8F
5
2
8G
5
3
8H
5
3.5
4
8J
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
7
5
8K
5
3
5
8L
6
500
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.082
0.083
0.084
0.085
0.086
0.086
0.087
0.087
0.089
0.090
0.091
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.097
0.098
3
6
8M
8N
8
500
3
6.5
6.5
7
8
600
3
8P
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
600
3
8Q
600
3
8
8R
600
2
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
8S
600
1
8T
600
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
8U
600
8V
8.5
7.8
7.4
7
600
8W
8X
600
600
8Y
600
8Z
6.6
6.2
5.6
5.2
5
600
81A
81B
81C
81D
81E
81F
81G
81H
81J
81K
18F
81M
81N
81P
81Q
81R
81S
81T
600
600
600
600
4.6
4.5
4.2
3.8
3.4
3.2
3
600
600
600
700
700
800
900
2.7
2.5
2.2
2.1
2
1000
1100
1300
1400
1400
1600
1700
1.8
1.7
1)The Zener Impedance is derived from the 1 kHZ AC voltage which results when an AC current having an RMS value equal to 10 % of
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2
Document Number 85772
Rev. 1.3, 08-Nov-04
MMBZ5225 to MMBZ5267
Vishay Semiconductors
the Zener current (IZT or IZK) is superimposed on IZT or IZK. Zener Impedance is measured at two points to insure a sharp knee on the
breakdown curve and to eliminate unstable units.
2) Valid provided case is kept at ambient temperature.
3) Measured at thermal equilibrium.
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
18672
18114
Figure 1. Forward characteristics
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
°C
18116
18118
Figure 2. Capacitance vs. Zener Voltage
Figure 4. Pulse Thermal Resistance vs. Pulse Duration
Document Number 85772
Rev. 1.3, 08-Nov-04
www.vishay.com
3
MMBZ5225 to MMBZ5267
Vishay Semiconductors
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
0.4 (.016)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
2.0 (0.079)
1
2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
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Document Number 85772
Rev. 1.3, 08-Nov-04
MMBZ5225 to MMBZ5267
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85772
Rev. 1.3, 08-Nov-04
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