MMBZ6V8DA [VISHAY]
Dual Zener Transient Voltage Suppressor Diodes for ESD Protection; 双齐纳瞬态电压抑制二极管的ESD保护
| 型号： | MMBZ6V8DA |
| 厂家： | 
VISHAY |
| 描述： | Dual Zener Transient Voltage Suppressor Diodes for ESD Protection |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZ6V8DC/A thru MMBZ27VDC/A
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual Zener Transient Voltage Suppressor
Diodes for ESD Protection
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
Mounting Pad Layout
.016 (0.4)
Top View
0.031 (0.8)
3
0.035 (0.9)
0.079 (2.0)
1
2
Dimensions in inches
and (millimeters)
.037(0.95)
.037(0.95)
0.037 (0.95)
0.037 (0.95)
Marking:
.102 (2.6)
.094 (2.4)
MMBZ15VDA = TA5
MMBZ27VDA = TA7
MMBZ6V8DA = ?
MMBZ15VDC = TC5
MMBZ27VDC = TC7
MMBZ6V8DC = ?
.016 (0.4) .016 (0.4)
MMBZ15VDC
MMBZ27VDC
MMBZ15VDA
MMBZ27VDA
Features
• Dual Silicon Planar Zener Diodes with Common
Cathode or Common Anode configurations.
Top
View
• Dual package provides for Bidirectional or
separate unidirectional configurations.
Common Anode
Common Cathode
• The dual configurations protect two separate lines
with only one device.
Mechanical Data
Case: SOT-23 Plastic Package
• Peak Power: 40 watts @1ms (Bidirectional) .
• High temperature Soldering Guaranteed:
230˚C for 10 seconds.
Weight: approx. 0.008g
Terminals: Solderable per MIL-STD-750, method 2026
• Ideal for ESD Protection.
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape)
E9/3K per 7” reel (8mm tape)
• For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3.
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Power Dissipation(1) @ TA≤ 25˚C
Ppk
40(4)
W
Total Power Dissipation
at TA = 25°C
Derate above 25˚C
225
1.8
mW
mW/˚C
PD
PD
on FR-5 Board(2
)
Total Power Dissipation
on Alumina Substrate(3)
at TA = 25°C
Derate above 25˚C
300
2.4
mW
mW/˚C
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
RΘJA
556
°C/W
°C
TJ, Tstg
–55 to +150
Notes:
(1) Nonrepetitive current pulse per Figure 2 and derate above TA = 25°C per Figure 3.
(2) FR-5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina.
(4) The MMBZ6V8DC/A is rated at 24V
Document Number 88358
21-May-02
www.vishay.com
1
MMBZ6V8DC/A thru MMBZ27VDC/A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Breakdown Voltage
Max Forward
Voltage
Max Reverse
Working
Peak
Reverse
Voltage
Voltage
Max
Reverse
Leakage
Max
Reverse
Surge
(2)
(Volts)(1)
Max
Temperature
Coefficient of
@ I
RSM
V
BR
(Clamping Voltage)
V
@I
V
F
@I
F
C
T
V
RWM
Current I Current I
R PP
Type
MMBZ6V8D
MMBZ15VD
MMBZ27VD
Min
6.48
Nom
6.8
Max
7.14
mA
1.0
1.0
1.0
(Volts)
(Volts)
V
(mV/°C) (Volts) (mA)
BR
(nA)
(Amps)
4.5
500
2.5
9.6
3.4
16
30
1.1
0.9
1.1
200
200
200
14.30
25.65
15.00
27.00
15.80
28.35
12.8
22.0
100
80
1.9
1.0
21.2
38.0
Notes: (1) VBR measured at pulse test current IT at an ambient temperature of 25°C
(2) Surge current waveform per Figure 2 and derate per Figure 3
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
FIG. 1 - STEADY STATE POWER DERATING CURVE
300
250
200
150
100
50
Layout for R
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in. (0.3mm)
test
ΘJA
ALUMINA SUBSTRATE
0.30 (7.5)
0.12 (3)
.04 (1)
.08 (2)
.04 (1)
FR-5 BOARD
.08 (2)
0.59 (15)
0.03 (0.8)
0.47 (12)
0.2 (5)
0
0
25
50
75
100
125
150
175
T, Temperature (°C)
0.06 (1.5)
Dimensions in inches (millimeters)
0.20 (5.1)
FIG. 2 - PULSE WAVEFORM
FIG. 3 - PULSE DERATING CURVE
100
75
PULSE WIDTH (tp) is DEFINED
as that POINT WHERE the PEAK
CURRENT DECAYS to 50% of
t
r
I
tr≤10µs
RSM
PEAK VALUE – I
RSM
100
50
HALF VALUE – I
RSM
2
50
25
tp
0
0
0
2
4
1
3
0
25
50
75
100 125 150 175 200
t, TIME (ms)
TA, AMBIENT TEMPERATURE (°C)
www.vishay.com
2
Document Number 88358
21-May-02
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