MOC8102-X017T [VISHAY]
OPTOISO 5.3KV TRANSISTOR 6SMD;
| 型号： | MOC8102-X017T |
| 厂家： | 
VISHAY |
| 描述： | OPTOISO 5.3KV TRANSISTOR 6SMD |
| 文件： | 总6页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOC8101, MOC8102, MOC8103, MOC8104
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, no Base Connection
FEATURES
• Isolation test voltage, 5300 VRMS
• No base terminal connection for improved
common mode interface immunity
• Long term stability
1
6
A
C
B
C
E
5
4
2
3
NC
• Industry standard dual in line package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
i179009-1
AGENCY APPROVALS
• UL
• cUL
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• BSI EN 62368-1
LINKS TO ADDITIONAL RESOURCES
3
D
3D Models
Design Tools
Related
Documents
Models
Footprints
• CQC GB4943.1-2011
• CQC GB8898-2011
Schematics
• CSA
DESCRIPTION
The MOC8101, MOC8102, MOC8103, MOC8104 family
optocoupler consisting of a gallium arsenide infrared
emitting diode optically coupled to a silicon planar
phototransistor detector in a plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
The base terminal of the MOC8101, MOC8102, MOC8103,
MOC8104 is not connected, resulting in a substantially
improved common mode interference immunity.
ORDERING INFORMATION
Option 6
DIP-#
M
O
C
8
1
0
#
-
#
X
0
#
#
T
PART NUMBER
CTR
BIN
PACKAGE OPTION
TAPE
AND
REEL
10.16 mm
Option 9
7.62 mm
Option 7
> 0.1 mm
> 0.7 mm
CTR (%)
10 mA
AGENCY CERTIFIED / PACKAGE
UL, CSA, BSI
DIP-6
50 to 80
73 to 117
MOC8102
108 to 173
160 to 256
MOC8101
MOC8103
MOC8104
DIP-6, 400 mil, option 6
SMD-6, option 9
VDE, UL, CSA, BSI
DIP-6
-
MOC8102-X006
MOC8102-X009
73 to 117
-
-
-
-
-
50 to 80
108 to 173
160 to 256
-
-
-
MOC8103-X001
-
DIP-6, 400 mil
SMD-6, option 7
SMD-6, option 9
MOC8102-X016
MOC8102-X017T (1)
-
-
-
-
MOC8104-X016
MOC8101-X017T
-
-
MOC8104-X019T
Notes
•
(1)
Additional options may be possible, please contact sales office
Also available in tubes; do not put T on end
Rev. 1.7, 04-Nov-2020
Document Number: 83660
1
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MOC8101, MOC8102, MOC8103, MOC8104
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
IF
6.0
60
V
mA
Forward continuous current
Surge forward current
Power dissipation
t ≤ 10 μs
IFSM
Pdiss
2.5
A
100
1.33
mW
mW/°C
Derate linearly from 25°C
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector current
BVCEO
BVECO
IC
30
7.0
50
V
V
mA
Derate linearly from 25°C
Power dissipation
2.0
150
mW/°C
mW
Pdiss
COUPLER
Derate linearly from 25 °C
Total power dissipation
Storage temperature
Operating temperature
Junction temperature
3.33
250
mW/°C
mW
°C
Ptot
Tstg
Tamb
Tj
-55 to +150
-55 to +100
100
°C
°C
max. 10 s, dip soldering:
distance to seating plane ≥ 1.5 mm
Soldering temperature (1)
Tsld
260
°C
Notes
•
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP)
(1)
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
IF = 10 mA
VF
VBR
IR
-
6.0
-
1.25
-
1.5
-
V
V
I
R = 10 μA
R = 6.0 V
R = 0 V, f = 1.0 MHz
V
0.01
25
10
-
μA
pF
K/W
V
CO
Rthja
-
Thermal resistance
OUTPUT
-
750
-
Collector emitter capacitance
V
CE = 5.0 V, f = 1.0 MHz
CCE
ICEO1
ICEO1
BVCEO
BVECO
Rthja
-
-
5.2
1.0
1.0
-
-
50
-
pF
nA
μA
V
VCE = 10 V, Tamp = 25 °C
MOC8101
Collector emitter dark current
VCE = 10 V, Tamp = 100 °C MOC8102
-
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Thermal resistance
I
C = 1.0 mA
30
7.0
-
-
IE = 100 μA
-
-
V
500
-
K/W
COUPLER
Saturation voltage collector emitter
Coupling capacitance
IF = 5.0 mA
VCEsat
CC
-
-
0.25
0.6
0.4
-
V
pF
Note
•
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
Rev. 1.7, 04-Nov-2020
Document Number: 83660
2
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MOC8101, MOC8102, MOC8103, MOC8104
www.vishay.com
Vishay Semiconductors
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
80
UNIT
%
MOC8101
MOC8102
MOC8103
MOC8104
CTR
50
-
-
-
-
CTR
73
117
173
256
%
Current transfer ratio
VCE = 10 V, IF = 10 mA
CTR
108
160
%
CTR
%
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Turn-on time
Turn-off time
Rise time
TEST CONDITION
SYMBOL
MIN.
TYP.
3.0
MAX.
UNIT
μs
V
V
V
V
CC = 10 V, IC = 2.0 mA, RL = 100 Ω
CC = 10 V, IC = 2.0 mA, RL = 100 Ω
CC = 10 V, IC = 2.0 mA, RL = 100 Ω
CC = 10 V, IC = 2.0 mA, RL = 100 Ω
ton
toff
tr
-
-
-
-
-
-
-
-
-
-
2.3
μs
2.0
μs
Fall time
tf
2.0
μs
Cut off frequency
fco
250
kHz
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Climatic classification
According to IEC 68 part 1
55 / 100 / 21
175
Comparative tracking index
CTI
VISO
VIOTM
VIORM
RIO
Maximum rated withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
t = 1 min
4420
10 000
890
≥ 1012
≥ 1011
400
VRMS
V
V
VIO = 500 V, Tamb = 25 °C
Ω
Isolation resistance
VIO = 500 V, Tamb = 100 °C
RIO
Ω
Output safety power
Input safety current
Input safety temperature
Creepage distance
Clearance distance
Creepage distance
Clearance distance
Insulation thickness
PSO
ISI
mW
mA
°C
275
TSI
175
Standard DIP-6
Standard DIP-6
400 mil DIP-6
400 mil DIP-6
≥ 7
mm
mm
mm
mm
mm
≥ 7
≥ 8
≥ 8
DTI
≥ 0.4
Note
•
As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits
Rev. 1.7, 04-Nov-2020
Document Number: 83660
3
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MOC8101, MOC8102, MOC8103, MOC8104
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
1.7
Normalized to TA = 25 °C
1.5
1.3
IF = 10 mA
VCE = 10 V
1
TA = 55 °C
TA = 25 °C
1.1
0.9
0.7
T
A = 100 °C
0.1
0
- 60 - 40 - 20
20 40 60 80 100 120
(°C)
0.1
imoc8101_02
1
100
10
I
(mA)
T
imoc8101_05
F
A
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 4 - Collector Current vs. Ambient Temperature
10 000
10
Normalized to VCE = 10 V
1000
100
Normalized to IF = 10 mA
1
VCE = 30 V
10
0.1
VCE = 10 V
1
0.1
0.01
0
20
40
60
(°C)
80
100
0.1
imoc8101_03
1
10
100
imoc8101_06
I
(mA)
T
F
A
Fig. 2 - Collector Current vs. LED Forward Current
Fig. 5 - Collector Emitter Dark Current vs. Ambient Temperature
20
25
MOC8104
MOC8103
18
IF = 10 mA
f= 1 MHz
16
20
15
10
5
14
CLED
12
10
8
CCE
MOC8102
MOC8101
6
4
2
0
0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
100
imoc8101_07
Voltage (V)
imoc8101_04
V
(V)
CE
Fig. 3 - Collector Current vs. Collector Emitter Voltage
Fig. 6 - Capacitance vs. Voltage
Rev. 1.7, 04-Nov-2020
Document Number: 83660
4
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MOC8101, MOC8102, MOC8103, MOC8104
www.vishay.com
Vishay Semiconductors
V
= 10 V
Input pulse
CC
R
= 100 Ω
I
I
L
F
C
10 %
90 %
Input
Output
Output pulse
t
f
t
r
t
t
on
off
Test circuit
Waveforms
imoc81010_01
Fig. 7 - Switching Time Test Circuit and Waveforms
PACKAGE DIMENSIONS in millimeters
Pin one ID
2
1
3
6.4 0.1
ISO method A
4
5
6
8.6 0.1
7.62 typ.
1.2 0.1
1 min.
3.555 0.255
18°
4° typ.
2.95 0.5
0.8 min.
0.25 typ.
0.85 0.05
3° to 9°
0.5 0.05
7.62 to 8.81
i178004
2.54 typ.
Option 6
Option 9
Option 7
10.36
9.96
9.53
10.03
7.62 typ.
7.8
7.4
7.62 ref.
0.7
4.6
4.1
0.102
0.249
8 min.
0.25 typ.
15° max.
0.51
1.02
0.35
0.25
8.4 min.
10.3 max.
8 min.
10.16
10.92
18450
Rev. 1.7, 04-Nov-2020
Document Number: 83660
5
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 09-Jul-2021
Document Number: 91000
1
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