MPS2907A [VISHAY]
SMALL SIGNAL TRANSISTORS (PNP); 小信号晶体管（ PNP ）
| 型号： | MPS2907A |
| 厂家： | 
VISHAY |
| 描述： | SMALL SIGNAL TRANSISTORS (PNP) |
| 文件： | 总3页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
PRELIMINARY
PRELIMINARY
MPS2907A
SMALL SIGNAL TRANSISTORS (PNP)
FEATURES
TO-92
0.142 (3.6)
0.181 (4.6)
♦ PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
♦ On special request, this transistor is also
manufactured in the pin configuration
TO-18.
♦ This transistor is also available in the
SOT-23 case with the type designation
MMBT2907A.
0.022 (0.55)
max.
0.098 (2.5)
E
C
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
B
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL
–VCBO
–VCEO
–VEBO
–IC
VALUE
60
UNIT
Volts
Volts
Volts
mA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
60
5.0
600
Power Dissipation at TA = 25°C
Derate above 25°C
625
5.0
mW
mW/°C
Ptot
Power Dissipation at TC = 25°C
Derate above 25°C
1.5
12
mW
mW/°C
Ptot
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction Case
Junction Temperature
RΘJA
RΘJC
Tj
200
83.3
°C/W
°C/W
°C
150
Storage Temperature Range
TS
–500 to +150
°C
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
12/16/98
MPS2907A
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at –IC = 10 µA, IE = 0
–V(BR)CBO
60
–
Volts
Collector-Emitter Breakdown Voltage
at –IC = 10 mA, IB = 0
–V(BR)CEO
60
5
–
–
Volts
Volts
Emitter-Base Breakdown Voltage
at –IE = 10 µA, IC = 0
–V(BR)EBO
Collector-Emitter Saturation Voltage
at –IC = 150 mA, –IB = 15 mA
at –IC = 500 mA, –IB = 50 mA
–VCEsat
–VCEsat
–
–
0.4
1.6
Volts
Volts
Base-Emitter Saturation Voltage
at –IC = 150 mA, –IB = 15 mA
at –IC = 500 mA, –IB = 50 mA
–VBEsat
–VBEsat
–
–
1.3
2.6
Volts
Volts
Collector Cutoff Current
at –VEB = 0.5 V, –VCE = 30 V
–ICEX
–ICBO
–
50
nA
Collector Cutoff Current
µA
at –VCB = 50 V, IE = 0
at –VCB = 50 V, IE = 0, TA=150°C
0.01
10
–
–
Base Cutoff Current
at –VEB = 0.5 V, –VCE = 30 V
–IBL
50
nA
DC Current Gain
at –VCE = 10 V, –IC = 0.1 mA
at –VCE = 10 V, –IC = 1 mA
at –VCE = 10 V, –IC = 10 mA
at –VCE = 10 V, –IC = 150 mA
at –VCE = 10 V, –IC = 500 mA
hFE
hFE
hFE
hFE
hFE
75
100
100
100
50
–
–
–
300
–
–
–
–
–
–
Gain-Bandwidth Product
at –VCE = 20 V, –IC = 50 mA, f = 100 MHz
fT
200
–
MHz
Output Capacitance
at –VCB = 10 V, f = 1 MHz, IE = 0
Cobo
–
–
8.0
30
pF
pF
Emitter-Base Capacitance
at –VEB = 2.0 V, f = 1 MHz, IE = 0
Cibo
MPS2907A
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Turn-On Time
at –IB1 = 15 mA, –IC = 150 mA, –VCC = 30 V
ton
–
45
ns
Delay Time (See Fig. 1)
at –IB1 = 15 mA, –IC = 150 mA, –VCC = 30 V
td
–
–
–
–
–
35
35
ns
ns
ns
ns
ns
Rise Time (See Fig. 1)
at –IB1 = 15 mA, –IC = 150 mA, –VCC = 30 V
tr
Turn-Off Time
at –IB1 = –IB2 = 15 mA, –IC = 150 mA, –VCC = 6 V
toff
100
225
75
Storage Time (See Fig. 2)
at IB1 = –IB2 = 15 mA, –IC = 150 mA, –VCC = 6 V
ts
Fall Time (See Fig. 2)
at IB1 = –IB2 = 15 mA, –IC = 150 mA, –VCC = 6 V
tf
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 1 - DELAY AND RISE TIME TEST CIRCUIT
FIGURE 2 - STORAGE AND FALL TIME TEST CIRCUIT
-30V
+15 V
1.0 k
-6.0 V
37
INPUT
= 50 Ω
PRF = 150 PPS
Rise Time ≤ 2.0 ns
P.W. < 200 ns
INPUT
Z = 50 Ω
o
PRF = 150 PPS
Rise Time ≤ 2.0 ns
P.W. < 200 ns
Z
o
200
1.0 k
1.0 k
To Oscilloscope
Rise Time ≤ 5.0 ns
To Oscilloscope
Rise Time ≤ 5.0 ns
0
0
-16 V
-30 V
50
50
200ns
200ns
相关型号：
MPS2907A-H-AP
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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