MPSA43 [VISHAY]
Small Signal Transistors (NPN); 小信号晶体管（ NPN ）
| 型号： | MPSA43 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Transistors (NPN) |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPSA42, MPSA43
Small Signal Transistors (NPN)
TO-92
FEATURES
.142 (3.6)
.181 (4.6)
♦
♦
NPN Silicon Epitaxial Planar Transistors
especially suited as line switch in tele-
phone subsets and in video output stages
of TV receivers and monitors.
As complementary types, the PNP transistors
MPSA92 and MPSA93 are recommended
.
.022 (0.55)
.098 (2.5)
max
C
E
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
B
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
MPSA42
MPSA43
V
V
300
200
V
V
CEO
CEO
MPSA42
MPSA43
V
CBO
V
CBO
300
200
V
V
Emitter-Base Voltage
Collector Current
V
6
V
EBO
I
C
500
mA
mW
°C
°C
Power Dissipation at T
= 25 °C
P
tot
6251)
amb
Junction Temperature
T
T
150
j
Storage Temperature Range
–65 to +150
S
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
4/98
MPSA42, MPSA43
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage MPSA42
V
V
300
200
–
–
–
–
V
V
(BR)CEO
(BR)CEO
I = 10 mA, I = 0
MPSA43
C
B
Collector-Base Breakdown Voltage
I = 100 µA, I = 0
MPSA42
MPSA43
V
V
300
200
–
–
–
–
V
V
(BR)CBO
(BR)CBO
C
E
Emitter-Base Breakdown Voltage
I = 100 µA, I = 0
V
6
–
–
V
(BR)EBO
E
C
Collector-Base Cutoff Current
V
V
= 200 V, I = 0
MPSA42
MPSA43
I
I
–
–
–
–
100
100
nA
nA
CB
CB
E
CBO
CBO
= 160 V, I = 0
E
Emitter-Base Cutoff Current
V
V
= 6 V, I = 0
MPSA42
MPSA43
I
I
–
–
–
–
100
100
nA
nA
EB
EB
C
EBO
EBO
= 4 V, I = 0
C
DC Current Gain
I = 1 mA, V = 10 V
h
h
h
25
40
40
–
–
–
–
–
–
–
–
–
C
CE
FE
FE
FE
I = 10 mA, V = 10 V
C
CE
I = 30 mA, V = 10 V
C
CE
Collector-Emitter Saturation Voltage
I = 20 mA, I = 2 mA
V
V
–
–
–
–
500
900
–
mV
CEsat
BEsat
C
B
Base-Emitter Saturation Voltage
I = 20 mA, I = 2 mA
–
mV
C
B
Gain-Bandwidth Product
I = 10 mA, V = 20 V, f = 100 MHz
f
T
50
MHz
E
CE
Collector-Base Capacitance
= 20 V, I = 0, f = 1 MHz
MPSA42
MPSA43
C
C
–
–
–
–
3
4
pF
pF
CBO
CBO
V
CB
E
Thermal Resistance Junction to Ambient Air
R
–
–
2001)
K/W
thJA
1) Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.
相关型号：
MPSA43-18
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
MOTOROLA
MPSA43-AMMO
TRANSISTOR 500 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
NXP
MPSA43-BP
Small Signal Bipolar Transistor, 0.3A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
MPSA43-STYLE-B
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ALLEGRO
MPSA43-STYLE-D
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ALLEGRO
MPSA43-STYLE-G
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ALLEGRO
©2020 ICPDF网 联系我们和版权申明