MSS1P6-E3 [VISHAY]

Surface Mount Schottky Barrier Rectifiers; 表面贴装肖特基二极管
MSS1P6-E3
型号: MSS1P6-E3
厂家: VISHAY    VISHAY
描述:

Surface Mount Schottky Barrier Rectifiers
表面贴装肖特基二极管

肖特基二极管
文件: 总4页 (文件大小:108K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
New Product  
MSS1P5 & MSS1P6  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifiers  
FEATURES  
• Very low profile - typical height of 0.65 mm  
eSMPTM Series  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 260 °C  
Top View  
Bottom View  
MicroSMP  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
free-wheeling, dc-to-dc converters, and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1 A  
VRRM  
IFSM  
50 V, 60 V  
25 A  
MECHANICAL DATA  
Case: MicroSMP  
Epoxy meets UL 94V-0 flammability rating  
VF at IF = 1.0 A  
TJ max.  
0.52 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
MSS1P5  
MSS1P6  
UNIT  
Device marking code  
15  
50  
16  
60  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (see Fig. 1)  
VRRM  
IF(AV)  
V
A
1.0  
25  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
at IF = 0.5 A,  
at IF = 1.0 A,  
0.45  
0.56  
-
TJ = 25 °C  
0.68  
Maximum instantaneous  
forward voltage (1)  
VF  
V
at IF = 0.5 A,  
at IF = 1.0 A,  
0.40  
0.52  
-
TJ = 125 °C  
0.60  
TJ = 25 °C  
TJ = 125 °C  
20  
7.0  
150  
12  
µA  
mA  
Maximum reverse current (1)  
Typical junction capacitance  
at rated VR  
IR  
-
at 4.0 V, 1 MHz  
CJ  
40  
pF  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number: 89018  
Revision: 09-Aug-07  
www.vishay.com  
1
New Product  
MSS1P5 & MSS1P6  
Vishay General Semiconductor  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
MSS1P5  
MSS1P6  
UNIT  
RθJA  
RθJL  
RθJC  
125  
30  
40  
Typical thermal resistance (1)  
°C/W  
Note:  
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 6.0 x 6.0 mm copper pad areas  
RθJL is measured at the terminal of cathode band. RθJC is measured at the top center of the body  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
7" diameter plastic tape and reel  
MSS1P6-E3/89A  
0.006  
89A  
4500  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
1.2  
10  
Resistive or Inductive Load  
TJ = 150 °C  
TJ = 125 °C  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1
0.1  
0.01  
TJ = 25 °C  
TL measured  
at the cathode band terminal  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0
25  
50  
75  
100  
125  
150  
Instantaneous Forward Voltage (V)  
Lead Temperature (°C)  
Figure 1. Maximum Forward Current Derating Curve  
Figure 3. Typical Instantaneous Forward Characteristics  
1000  
100  
0.7  
D = 0.5  
D = 0.8  
D = 0.3  
0.6  
0.5  
D = 0.2  
D = 0.1  
TJ = 150 °C  
10  
D = 1.0  
0.4  
0.3  
0.2  
0.1  
0
TJ = 125 °C  
1
0.1  
T
TJ = 25 °C  
0.01  
0.001  
D = tp/T  
tp  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Average Forward Current (A)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 2. Forward Power Loss Characteristics  
Figure 4. Typical Reverse Characteristics  
www.vishay.com  
2
Document Number: 89018  
Revision: 09-Aug-07  
New Product  
MSS1P5 & MSS1P6  
Vishay General Semiconductor  
1000  
100  
1
1000  
Junction to Ambient  
100  
10  
1
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
1000  
Reverse Voltage (V)  
t - Pulse Duration (s)  
Figure 5. Typical Junction Capacitance  
Figure 6. Typical Transient Thermal Impedance  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
MicroSMP  
0.059 (1.50)  
0.043 (1.10)  
0.030 (0.75)  
0.022 (0.55)  
Cathode band  
0.055 (1.40)  
0.047 (1.20)  
0.039 (0.98)  
0.031 (0.78)  
0.030 (0.75)  
0.022 (0.55)  
0.091 (2.30)  
0.083 (2.10)  
0.106 (2.70)  
0.091 (2.30)  
Mounting Pad Layout  
0.079  
(2.00)  
0.032  
(0.80)  
0.030 (0.75)  
0.022 (0.55)  
0.043  
(1.10)  
0.032  
(0.80)  
0.011 (0.27)  
0.005 (0.12)  
0.020  
(0.50)  
Document Number: 89018  
Revision: 09-Aug-07  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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