MURS140/2 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN;
| 型号： | MURS140/2 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN 功效 光电二极管 |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURS140 and MURS160
New Product
Vishay Semiconductors
formerly General Semiconductor
Ultrafast Plastic Rectifier
DO-214AA (SMB)
Reverse Voltage 400 to 600V
Forward Current 1.0A
Reverse Recovery Time 50ns
Cathode Band
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.106 MAX
(2.69 MAX)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.083 MIN
(2.10 MIN)
0.096 (2.44)
0.084 (2.13)
Dimensions in inches
and (millimeters)
0.050 MIN
(1.27 MIN)
0.060 (1.52)
0.030 (0.76)
0.008
0.220 REF
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
Features
Mechanical Data
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Ideally suited for use in very high frequency switching
power supplies, inverters and as free wheeling diodes
• Ultrafast recovery time for high efficiency
Case: JEDEC DO-214AA molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 oz., 0.093 g
• For surface mount applications • Glass passivated junction
Packaging Codes/Options:
•
High temperature soldering guaranteed:
250°C/10 seconds on terminals
5/3.2K per 13” reel (12mm tape)
2/750 EA per 7” reel (12mm tape)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
MURS140
MURS160
Unit
Device Marking Codes
MG
MJ
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 150°C
VRRM
VRWM
VDC
400
600
V
V
V
400
600
400
600
1.0
2.0
IF(AV)
IFSM
A
A
See figure 1
TL = 125°C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
35
13
Typical thermal resistance junction to ambient
Operating junction and storage temperature range
RΘJL
°C/W
°C
TJ, TSTG
–65 to +175°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous
forward voltage (Note 1)
at IF = 1.0A, TJ = 25°C
at IF = 1.0A, TJ = 150°C
1.25
1.05
VF
V
Maximum instantaneous reverse current
at rated DC blocking voltage (Note 1)
TJ = 25°C
5.0
IR
trr
trr
µA
ns
ns
TJ = 150°C
150
Maximum reverse recovery time at I =0.5A, I =1.0A, I =0.25A
50
F
R
rr
Maximum reverse recovery time at,
75
I = 1.0A, di/dt = 50A/µs, V = 30V, I = 10% I
RM
F
R
rr
Maximum forward recovery time at I = 1.0A, di/dt = 100A/µs,
F
tfr
50
ns
recovery to 1.0V
Notes: (1) Pulse test: tp = 300µs, duty cycle ≤ 2%
Document Number 88688
30-Jul-02
www.vishay.com
1
MURS140 and MURS160
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise specified)
Fig. 1 – Forward Current
Derating Curve
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
6.0
5.0
50
40
30
20
4.0
3.0
2.0
1.0
0
10
0
0
25
50
75
100
125
150
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 50 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse Leakage
Characteristics
80
10
100
10
TJ = 175°C
TJ = 175°C
1
TJ = 100°C
1
TJ = 100°C
TJ = 25°C
0.1
0.1
0.01
0.001
TJ = 25°C
0.01
0
0.4
0.8
1.2
1.6
2.0
2.4
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
100
10
1
°
TJ = 25 C
f = 1.0 MHz
Vsig = 50m Vp-p
0.1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88688
30-Jul-02
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