MURS160-M3/5BT [VISHAY]
DIODE GEN PURP 600V 1A DO214AA;型号: | MURS160-M3/5BT |
厂家: | VISHAY |
描述: | DIODE GEN PURP 600V 1A DO214AA |
文件: | 总5页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MURS140-M3, MURS160-M3
www.vishay.com
Vishay General Semiconductor
Surface-Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB (DO-214AA)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
Anode
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
3
D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
1.0 A
VRRM
400 V, 600 V
35 A
Base P/N-M3
- halogen-free, RoHS-compliant, and
IFSM
commercial grade
trr
VF
50 ns
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
1.05 V
TJ max.
175 °C
Package
SMB (DO-214AA)
Single
Polarity: color band denotes cathode end
Circuit configuration
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS140
MG
MURS160
MJ
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
400
600
V
V
V
400
600
Maximum DC blocking voltage
400
600
TL = 150 °C
Maximum average forward rectified current at (fig. 1)
TL = 125 °C
1.0
2.0
IF(AV)
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
35
A
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
°C
Revision: 09-Apr-2020
Document Number: 89462
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS140-M3, MURS160-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MURS140
MURS160
UNIT
TJ = 25 °C
1.25
1.05
5.0
(1)
Maximum instantaneous forward voltage
IF = 1.0 A
VF
V
TJ = 150 °C
TJ = 25 °C
Maximum instantaneous reverse current at
rated DC blocking voltage
(1)
IR
μA
TJ = 150 °C
150
50
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 1.0 A, dI/dt = 50 A/μs,
R = 30 V, Irr = 10 % IRM
Maximum reverse recovery time
Maximum forward recovery time
trr
ns
ns
75
50
V
IF = 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
tfr
Note
(1)
Pulse test: tp = 300 μs pulse, duty cycle ≤ 2 %
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS140
MURS160
UNIT
Typical thermal resistance, junction to lead
RθJL
13
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
MURS160-M3/52T
MURS160-M3/5BT
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.096
52T
5BT
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
0.096
3200
Revision: 09-Apr-2020
Document Number: 89462
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS140-M3, MURS160-M3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10000
1000
100
6.0
TJ = 175 °C
5.0
4.0
3.0
2.0
1.0
0
10
1
TJ = 100 °C
TJ = 25 °C
0.1
0.01
0.001
TJ = -40 °C
10
0
25
50
75
100
125
150
175
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
50
40
30
20
10
0
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
1
10
100
0.1
1
10
100
Number of Cycles at 50 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
Axis Title
100
10
10000
1000
100
TJ = 175 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0.01
TJ = -40 °C
10
0
0.4
0.8
1.2
1.6
2.0
2.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 09-Apr-2020
Document Number: 89462
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS140-M3, MURS160-M3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.220 (5.59) REF.
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 09-Apr-2020
Document Number: 89462
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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