MURS320-M3/57T [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN;
| 型号： | MURS320-M3/57T |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN 功效 光电二极管 |
| 文件： | 总5页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURS320-M3
Vishay General Semiconductor
www.vishay.com
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-214AB (SMC)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
IF(AV)
VRRM
IFSM
trr
3.0 A
200 V
125 A
25 ns
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
VF
0.71 V
175 °C
TJ max.
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
Package
DO-214AB (SMC)
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Diode variations
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS320
MD
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
200
V
V
V
200
Maximum DC blocking voltage
200
TL = 140 °C
Maximum average forward rectified current at: (fig. 1)
TL = 130 °C
3.0
IF(AV)
A
4.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
125
A
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
°C
Revision: 20-Feb-15
Document Number: 89490
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS320-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MURS320
0.875
0.890
0.710
5.0
UNIT
IF = 3.0 A
TJ = 25 °C
(1)
Maximum instantaneous forward voltage
IF = 4.0 A
IF = 3.0 A
VF
V
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
Maximum instantaneous reverse current
at rated DC blocking voltage
(1)
IR
μA
150
Maximum reverse recovery time
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
trr
25
ns
ns
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
35
25
IF = 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
Maximum forward recovery time
tfr
ns
Note
(1)
Pulse test: tp = 300 μs, duty cycle 2 %
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MURS320
UNIT
Typical thermal resistance junction to lead
RJL
11
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
MURS320-M3/57T
MURS320-M3/9AT
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.211
57T
9AT
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
0.211
3500
Revision: 20-Feb-15
Document Number: 89490
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS320-M3
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
8.0
6.0
4.0
2.0
0
1000
100
10
TJ = 175 °C
TJ = 100 °C
1
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
0
25
50
75
Lead Temperature (°C)
100
125
150
175
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
125
100
75
50
25
0
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
1
10
100
0.1
1
10
100
Reverse Voltage (V)
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
TJ = 175 °C
10
TJ = 100 °C
TJ = 25 °C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Voltage
Revision: 20-Feb-15
Document Number: 89490
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS320-M3
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 20-Feb-15
Document Number: 89490
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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