MURS350 [VISHAY]
Ultrafast Rectifiers; 超高速整流器
| 型号： | MURS350 |
| 厂家： | 
VISHAY |
| 描述： | Ultrafast Rectifiers |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURS340 thru MURS360
New Product
Vishay Semiconductors
formerly General Semiconductor
Ultrafast Rectifiers
Reverse Voltage 400 to 600V
Forward Current 3.0A
DO-214AB (SMC)
Reverse Recovery Time 50ns
Cathode Band
Mounting Pad Layout
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
0.185 MAX.
(4.69 MAX.)
0.280 (7.11)
0.260 (6.60)
0.121 MIN.
(3.07 MIN.)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.103 (2.62)
0.079 (2.06)
0.320 REF
Dimensions in inches
and (millimeters)
0.060 (1.52)
0.030 (0.76)
0.008
(0.203)
Max.
Features
0.320 (8.13)
0.305 (7.75)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Mechanical Data
• Ideally suited for use in very high frequency switching
power supplies, inverters and as free wheeling diodes
Case: JEDEC DO-214AB molded plastic body over
passivated chip
• Ultrafast recovery time for high efficiency
• Glass passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007oz., 0.21g
•
High temperature soldering guaranteed: 250°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
MURS340
MURS360
Unit
Device Marking Codes
MG
MJ
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: TL = 130°C
VRRM
VRWM
VDC
400
600
V
V
V
400
600
400
600
3.0
4.0
IF(AV)
IFSM
A
A
(See figure 1)
TL = 115°C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
125
Typical thermal resistance junction to ambient
Operating junction and storage temperature range
RθJL
11
°C/W
°C
TJ, TSTG
–65 to +175°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
IF = 3.0A, TJ = 25°C
IF = 4.0A, TJ = 25°C
IF = 3.0A, TJ = 150°C
1.25
1.28
1.05
Maximum instantaneous
VF
V
forward voltage (1)
Maximum instantaneous reverse current
at rated DC blocking voltage (1)
TJ = 25°C
TJ = 150°C
10
250
IR
trr
trr
µA
ns
ns
Maximum reverse recovery time at I =0.5A, I =1.0A, I =0.25A
50
75
F
R
rr
Maximum reverse recovery time at,
I =1.0A, di/dt=50A/µs, V =30V, I =10% I
F
R
rr
RM
Maximum forward recovery time
IF=1.0A, di/dt=100A/µs, Rec. to 1.0V
tfr
25
ns
Note: (1) Pulse test: tp = 300µs, duty cycle ≤ 2%
Document Number 88816
18-Nov-02
www.vishay.com
1
MURS340 thru MURS360
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Derating Curve
5
150
125
100
4
3
75
50
25
0
2
1
0
25
75
50
100
125
150
175
1
10
100
TL -- Lead Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 –Typical Instantaneous Forward
Characteristics
Fig. 4 – Typical Reverse Characteristics
100
10
1000
100
10
TJ = 150°C
TJ = 125°C
TJ = 125°C
TJ = 100°C
TJ = 150°C
1
1
TJ = 100°C
0.1
TJ = 25°C
TJ = 25°C
0.1
0.01
0.3 0.5 0.7
0.9
1.1 1.3 1.5
1.7 1.9 2.1
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Reverse Switching
Characteristics
Fig. 5 – Typical Junction Capacitance
1000
100
10
120
100
Trr
Qrr
1A, 50A/µs, 30V
80
60
40
20
0
1
0.1
1
10
100
25
50
75
100
125
Reverse Voltage (V)
Junction Temperature (°C)
www.vishay.com
2
Document Number 88816
18-Nov-02
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