P4KA15-E3/54 [VISHAY]
Trans Voltage Suppressor Diode, 400W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN;
| 型号： | P4KA15-E3/54 |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 400W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN 局域网 二极管 |
| 文件： | 总5页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P4KA6.8 thru P4KA43A
Vishay General Semiconductor
Automotive Transient Voltage Suppressors
High Temperature stability & High
Reliability Conditions
Major Ratings and Characteristics
V(BR)
PPPM
PD
6.8 V to 43 V
Patented*
400 W
1.0 W
DO-204AL (DO-41)
* Patent#'s
4,980,315
5,166,769
5,278,094
IFSM
40 A
Tj max.
185 °C
Features
• Patented PAR construction
Mechanical Data
Case: DO-204AL, molded epoxy over passivated
®
junction
• Available in Unidirectional polarity only
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Typical I less than 1.0 µA above 10 V rating
D
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Typical Applications
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive, and
Telecommunication.
Maximum Ratings
(TA = 25 °C unless otherwise specified)
Parameter
Symbol
PPPM
Value
Unit
W
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)
Minimum 400
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)
IPPM
PD
see next table
A
W
A
1.0
40
Peak forward surge current 8.3 ms single half sine-wave (2)
Maximum instantaneous forward voltage at 25 A
IFSM
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 185
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88364
22-Dec-05
www.vishay.com
1
P4KA6.8 thru P4KA43A
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Maximum TJ = 150 °C
Maximum.
Peak Pulse
Surge
Maximum
Clamping
Voltage
Maximum
Temp.
Coefficient
of
Reverse
Leakage
at VWM
Maximum
Reverse
Leakage
at VWM
Breakdown Voltage
V(BR)(1)at IT
(V)
Test
Current
IT
Stand-off
Voltage
VWM
Current
at IPPM
(2)
V(BR)
ID
VC
(V)
IPPM
Device Type
(mA)
(V)
(%/°C)
(A)
(µA)
I
D (µA)
Min
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
P4KA6.8
P4KA6.8A
P4KA7.5
P4KA7.5A
P4KA8.2
P4KA8.2A
P4KA9.1
P4KA9.1A
P4KA10
10
10
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.0
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
300
300
150
150
50
1000
1000
500
500
200
200
50
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.2
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
0.057
0.057
0.060
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
10
10
10
10
50
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
10
50
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
P4KA10A
P4KA11
20
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
P4KA11A
P4KA12
P4KA12A
P4KA13
P4KA13A
P4KA15
P4KA15A
P4KA16
P4KA16A
P4KA18
P4KA18A
P4KA20
P4KA20A
P4KA22
P4KA22A
P4KA24
P4KA24A
P4KA27
P4KA27A
P4KA30
P4KA30A
P4KA33
9.7
8.4
P4KA33A
P4KA36
8.8
7.7
P4KA36A
P4KA39
8.0
7.1
P4KA39A
P4KA43
7.4
6.5
P4KA43A
6.7
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88364
22-Dec-05
P4KA6.8 thru P4KA43A
Vishay General Semiconductor
Ordering Information
Preferred P/N
Unit Weight (g)
0.336
Preferred Package Code
54
Base Quantity
4000
Delivery Mode
P4KA6.8A-E3/54
13" Diameter Paper Tape & Reel
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
100
150
100
50
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
TJ = 25 °C
Pulse Width (td)
tr = 10 µsec
is defined as the point
where the peak current
decays to 50 % of IPPM
Peak Value
IPPM
10
Half Value — IPP
IPPM
2
1
10/1000 µsec Waveform
as defined by R.E.A.
td
0.1
0
1.0
3.0
4.0
0.1 µs 1.0 µs
10 µs
100 µs
1.0 ms
10 ms
0
2.0
t - Time (ms)
td - Pulse Width (s)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
100
20000
10000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
75
50
Measured at
Zero Bias
1000
100
Measured at
Stand-Off
Voltage, VWM
25
0
0
25
50
75
100
125
150 175
200
1.0
10
(BR) - Breakdown Voltage (V)
100
200
V
TJ - Initial Temperature (°C)
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
Figure 4. Typical Junction Capacitance
Document Number 88364
22-Dec-05
www.vishay.com
3
P4KA6.8 thru P4KA43A
Vishay General Semiconductor
1.00
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
60 Hz
Resistive or
Inductive Load
100
50
0.75
0.50
L = 0.375" (9.5 mm)
Lead Lengths
0.25
10
0
0
25
50
75
100
125 150 175
200
1
5
10
50
100
Number of Cycles at 60 Hz
TL - Lead Temperature (°C)
Figure 5. Power Derating Curve
Figure 6. Maximum Non-Repetitive/Peak Forward Surge Current
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Available in uni-directional only
www.vishay.com
4
Document Number 88364
22-Dec-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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