P4KE55073 [VISHAY]
300W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN;
| 型号： | P4KE55073 |
| 厂家： | 
VISHAY |
| 描述： | 300W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN 电视 |
| 文件： | 总2页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P4KE530 and P4KE550
New Product
Vishay Semiconductor
TRANSZORB® Transient Voltage Suppressors
Steady State Power 1W
Peak Pulse Power 300W
Breakdown Voltage 530, 550V
DO-204AL (DO-41 Plastic)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Protects power IC controllers such as TOPSwitch®
• Glass passivated junction
1.0 (25.4)
MIN.
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
• Excellent clamping capability
• Available in unidirectional only
0.107 (2.7)
0.080 (2.0)
DIA.
Mechanical Data
Case: JEDEC DO-204AL molded plastic body over
0.205 (5.2)
0.160 (4.1)
passivated junction
Terminals: Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: The band denotes the cathode, which is positive
with respect to the anode under normal TVS operation
1.0 (25.4)
MIN.
Mounting Position: Any
Weight: 0.012oz., 0.3g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
0.034 (0.86)
0.028 (0.71)
DIA.
54 – 5.5K per 13” paper Reel
(52mm horiz. tape), 16.5K/carton
73 – 3K per horiz. tape & Ammo box, 30K/carton
Dimensions are in inches and (millimeters)
Maximum Ratings and Thermal Characteristics TA= 25OC unless otherwise noted.
Parameter
Symbol
PM(AV)
PPPM
P4KE530
P4KE550
Unit
W
Steady state power dissipation (Note 3)
Peak pulse power dissipation (Note 1, 2, Fig. 1)
Stand-off voltage
1.0
Minimum 300
W
VWM
477
495
V
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
RΘJL
27
75
°C/W
°C/W
°C
RΘJA
TJ, TSTG
–55 to +150
Electrical Characteristics TA= 25OC unless otherwise noted.
Parameter
Symbol
V(BR)
Vc
P4KE530
P4KE550
Unit
V
Minimum breakdown voltage at 100µA
Max. clamping voltage at 400mA, 10/1000µs-waveform
Maximum DC reverse leakage current at VWM
Typical temperature coefficient of V(BR)
530
550
660
5.0
V
ID
µA
650
mV°C
Typical capacitance (Note 4)
at 0V
at 200V
90
7.5
CJ
pF
Notes: (1) Non repetitive current pulse per Fig.3 and derated above 25OC per Fig. 2
(2) Peak pulse power waveform is 10/1000µs
(3) Lead temperature at 75OC = TL
(4) Measured at 1MHZ
Document Number 88366
14-Dec-01
www.vishay.com
1
P4KE530 and P4KE550
Vishay Semiconductor
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 2 – Pulse Derating Curve
Fig. 1 – Peak Pulse Power Rating Curve
100
100
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
75
50
10
1
25
0
0.1
25
50
75
125
150
175
0
100
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
td – Pulse Width (sec.)
TA – Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
100
50
TJ = 25°C
Pulse Width (td)
tr = 10µsec.
is defined as the point
Peak Value
IPPM
where the peak current
decays to 50% of IPPM
Half Value – IPP
IPPM
2
10/1000µsec. Waveform
as defined by R.E.A.
td
0
1.0
3.0
4.0
0
2.0
t – Time (ms)
Application Notes
•
•
Respect Thermal Resistance (PCB Layout) – as the temperature coefficient also contributes to the clamping voltage.
Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature.
Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power.
•
•
•
Clamping voltage is influenced by internal resistance – design approximation is 7V per 100mA slope.
Keep temperature of TVS lower than TOPSwitch as a recommendation.
Maximum current is determined by the maximum TJ and can be higher than 300mA.
Contact supplier for different clamping voltage / current arrangements.
•
•
Minimum breakdown voltage can be customized for other applications. Contact supplier
TOPSwitch is a registered trademark of Power Integrations, Inc.
www.vishay.com
2
Document Number 88366
14-Dec-01
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P4KE550A-BP-HF
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