P4SMA350CA-M3/5A [VISHAY]
Trans Voltage Suppressor Diode, 300V V(RWM), Bidirectional,;
| 型号： | P4SMA350CA-M3/5A |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 300V V(RWM), Bidirectional, 二极管 |
| 文件： | 总5页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P4SMA Series
Vishay General Semiconductor
www.vishay.com
®
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional 400
W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
(300 W above 91 V)
DO-214AC (SMA)
• Excellent clamping capability
• Very fast response time
PRIMARY CHARACTERISTICS
• Low incremental surge resistance
VWM
5.8 V to 459 V
6.45 V to 567 V
6.45 V to 231 V
400 W, 300 W
3.3 W
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
V
BR uni-directional
V
BR bi-directional
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PPPM
PD
I
FSM (uni-directional only)
40 A
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
TJ max.
150 °C
Polarity
Uni-directional, bi-directional
DO-214AC (SMA)
Package
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. P4SMA10CA).
Electrical characteristics apply in both directions.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink, TA = 50 °C
PPPM
IPPM
PD
400
W
A
See next table
3.3
40
W
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
Operating junction and storage temperature range
TJ, TSTG
-65 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2, rating is 300 W above 91 V
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 06-Feb-15
Document Number: 89276
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P4SMA Series
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
MARKING
CODE
BREAKDOWN
MAXIMUM MAXIMUM MAXIMUM
TEST
CURRENT
IT
MAXIMUM
TEMPERATURE
OF VBR
VOLTAGE
STAND-OFF REVERSE
PEAK
PULSE
CLAMPING
VOLTAGE
AT IPPM
(1)
PART NUMBER
V
BR AT IT
VOLTAGE
LEAKAGE
AT VWM
V
WM (V)
CURRENT
(mA)
(%/°C)
UNI
BI
MIN. MAX.
ID (4) (μA)
IPPM (2) (A)
VC (V)
P4SMA6.8A
P4SMA7.5A
P4SMA8.2A
P4SMA9.1A
P4SMA10A
P4SMA11A
P4SMA12A
P4SMA13A
P4SMA15A
P4SMA16A
P4SMA18A
P4SMA20A
P4SMA22A
P4SMA24A
P4SMA27A
P4SMA30A
P4SMA33A
P4SMA36A
P4SMA39A
P4SMA43A
P4SMA47A
P4SMA51A
P4SMA56A
P4SMA62A
P4SMA68A
P4SMA75A
P4SMA82A
P4SMA91A
P4SMA100A
P4SMA110A
P4SMA120A
P4SMA130A
P4SMA150A
P4SMA160A
P4SMA170A
P4SMA180A
P4SMA200A
P4SMA220A
P4SMA250A
P4SMA300A
P4SMA350A
P4SMA400A
P4SMA440A
P4SMA480A
P4SMA510A
P4SMA540A
6V8A 6V8C 6.45
7V5A 7V5C 7.13
8V2A 8V2C 7.79
9V1A 9V1C 8.65
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
231
263
315
368
420
462
504
535
10
10
10
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
85.5
94.0
102
111
128
136
145
154
171
185
214
256
300
342
376
408
434
459
1000
500
200
50.0
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
38.1
35.4
33.1
29.9
27.6
25.6
24.0
22.0
18.9
17.8
15.9
14.4
13.1
12.0
10.7
9.7
8.8
8.0
7.4
6.7
6.2
5.7
5.2
4.7
4.3
3.9
3.5
3.2
2.2
2.0
1.8
1.7
1.4
1.4
1.3
1.2
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
104
113
125
137
152
165
179
207
219
234
246
274
328
344
414
482
548
602
658
698
740
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.089
0.090
0.092
0.090
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.106
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10A
11A
12A
13A
15A
16A
18A
20A
22A
24A
27A
30A
33A
36A
39A
43A
47A
51A
56A
62A
68A
75A
82A
91A
10C
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
33C
36C
39C
43C
47C
51C
56C
62C
68C
75C
82C
91C
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
100A 100C 95.0
110A 110C 105
120A 120C 114
130A 130C 124
150A 150C 143
160A 160C 152
170A 170C 162
180A 180C 171
200A 200C 190
220A 220C 209
1.1
0.90
0.87
0.73
0.62
0.55
0.50
0.46
0.43
0.41
250A
300A
350A
400A
440A
480A
510A
540A
-
-
-
-
-
-
-
-
237
285
333
380
418
456
485
513
567
Notes
(1)
(2)
(3)
(4)
(5)
Pulse test: tp 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
All terms and symbols are consistent with ANSI/IEEE CA62.35
For bi-directional types with VR 10 V and less, the ID limit is doubled
VF = 3.5 V at IF = 25 A (uni-directional only)
Revision: 06-Feb-15
Document Number: 89276
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P4SMA Series
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
120
UNIT
°C/W
°C/W
(1)
Thermal resistance, junction to ambient air
Thermal resistance, junction to leads
RJA
RJL
30
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
P4SMA6.8A-M3/61
P4SMA6.8A-M3/5A
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.064
0.064
61T
5AT
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Non-Repetitive Pulse
Waveform shown in Fig. 3
tr = 10 µs
T
A = 25 °C
Peak Value
IPPM
10
100
50
0
P4SMA6.8A -
P4SMA91A
IPP
Half Value -
IPPM
P4SMA100A -
P4SMA540A
2
1
10/1000 µs Waveform
as defined by R.E.A.
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
td
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1.0
3.0
4.0
0
2.0
t - Time (ms)
td - Pulse Width (s)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
100
75
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Stand-Off
1000
100
10
Voltage VWM
50
Uni-Directional
Bi-Directional
25
0
1
10
100
200
0
25
50
75
100 125
150 175
200
TJ - Initial Temperature (°C)
VBR - Breakdown Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
Revision: 06-Feb-15
Document Number: 89276
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P4SMA Series
Vishay General Semiconductor
www.vishay.com
1000
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
100
10
1
10
0.001
0.01
0.1
1
10
100
1000
1
5
10
50
100
tp - Pulse Duration (s)
Number of Cycles at 60 Hz
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
0.066 (1.68)
MAX.
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 06-Feb-15
Document Number: 89276
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
Document Number: 91000
1
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