P6SMB300CAHE3_A/I [VISHAY]
Trans Voltage Suppressor Diode, 256V V(RWM), Bidirectional;
| 型号： | P6SMB300CAHE3_A/I |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 256V V(RWM), Bidirectional |
| 文件： | 总5页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P6SMB Series
Vishay General Semiconductor
www.vishay.com
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AA (SMBJ)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VWM
5.8 V to 459 V
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
V
BR (uni-directional)
6.8 V to 540 V
6.8 V to 220 V
600 W
V
BR (bi-directional)
PPPM
PD
5.0 W
MECHANICAL DATA
IFSM (uni-directional only)
100 A
Case: DO-214AA (SMBJ)
TJ max.
150 °C
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Polarity
Uni-directional, bi-directional
DO-214AA (SMBJ)
Package
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. P6SMB10CA).
Electrical characteristics apply in both directions.
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
600
UNIT
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1)
Power dissipation on infinite heatsink at TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
IPPM
See next table
5.0
A
PD
W
IFSM
100
A
TJ, TSTG
-65 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 06-Jun-14
Document Number: 88370
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P6SMB Series
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM MAXIMUM
DEVICE
MARKING
CODE
MAXIMUM
MAXIMUM
VOLTAGE
TEST
STAND-OFF REVERSE
PEAK
PULSE
CLAMPING TEMPERATURE
(1)
PART
NUMBER
V
BR AT IT
(V)
CURRENT VOLTAGE
LEAKAGE
AT VWM
VOLTAGE
AT IPPM
COEFFICIENT
OF VBR
IT
(mA)
VWM
(V)
CURRENT
(3)
(2)
ID
IPPM
V
C (V)
(%/°C)
UNI
BI
MIN. MAX.
(μA)
1000
500
200
50
(A)
57.1
53.1
49.6
44.8
41.4
38.5
35.9
33.0
28.3
26.7
23.8
21.7
19.6
18.1
16.0
14.5
13.1
12.0
11.1
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
4.4
3.9
3.6
3.4
2.9
2.7
2.6
2.4
2.2
P6SMB6.8A
P6SMB7.5A
P6SMB8.2A
P6SMB9.1A
P6SMB10A
P6SMB11A
P6SMB12A
P6SMB13A
P6SMB15A
P6SMB16A
P6SMB18A
P6SMB20A
P6SMB22A
P6SMB24A
P6SMB27A
P6SMB30A
P6SMB33A
P6SMB36A
P6SMB39A
P6SMB43A
P6SMB47A
P6SMB51A
P6SMB56A
P6SMB62A
P6SMB68A
P6SMB75A
P6SMB82A
P6SMB91A
P6SMB100A
P6SMB110A
P6SMB120A
P6SMB130A
P6SMB150A
P6SMB160A
P6SMB170A
P6SMB180A
P6SMB200A
P6SMB220A
P6SMB250A
P6SMB300A
P6SMB350A
P6SMB400A
P6SMB440A
P6SMB480A
P6SMB510A
P6SMB540A
6V8A 6V8C 6.45
7V5A 7V5C 7.13
8V2A 8V2C 7.79
9V1A 9V1C 8.65
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
10
10
10
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
85.5
94.0
102
111
128
136
145
154
171
185
214
256
300
342
376
408
434
459
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
328
344
414
482
548
602
658
698
740
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10A 10C
11A 11C
12A 12C
13A 13C
15A 15C
16A 16C
18A 18C
20A 20C
22A 22C
24A 24C
27A 27C
30A 30C
33A 33C
36A 36C
39A 39C
43A 43C
47A 47C
51A 51C
56A 56C
62A 62C
68A 68C
75A 75C
82A 82C
91A 91C
9.50
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
100A 100C 95.0
110A 110C 105
120A 120C 114
130A 130C 124
150A 150C 143
160A 160C 152
170A 170C 162
180A 180C 171
200A 200C 190
220A 220C 209
116
126
137
158
168
179
189
210
231
1.8
250A
300A
350A
400A
440A
480A
510A
540A
-
-
-
-
-
-
-
-
237
285
333
380
418
456
485
513
263
315
368
420
462
504
535
567
1.74
1.45
1.24
1.10
1.00
0.91
0.86
0.81
Notes
(1)
(2)
(3)
(4)
(5)
Pulse test: tp 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
For bi-directional types with VWM of 10 V and less, the ID limit is doubled
All terms and symbols are consistent with ANSI/IEEE CA62.35
VF = 3.5 V at IF = 50 A (uni-directional only)
Revision: 06-Jun-14
Document Number: 88370
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P6SMB Series
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
100
UNIT
Typical thermal resistance, junction to ambient air (1)
RJA
°C/ W
Typical thermal resistance, junction to lead
RJL
20
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
VOLTAGE RANGE
(V)
UNIT
WEIGHT
(g)
PACKAGE
CODE
BASE
QUANTITY
PREFERRED P/N
DELIVERY MODE
UNI -
BI -
P6SMB6.8A-E3/52
0.096
0.096
0.096
0.096
6.8 to 540
6.8 to 540
250 to 540
250 to 540
6.8 to 220
52
5B
H
750
3200
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
P6SMB6.8A-E3/5B
6.8 to 220
P6SMB250AHE3_A/H (1)
P6SMB250AHE3_A/I (1)
-
-
I
3200
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
100
75
10
50
1
25
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
0
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
0
25
50
75
100 125
150 175
200
td - Pulse Width (s)
TJ - Initial Temperature (°C)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Revision: 06-Jun-14
Document Number: 88370
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P6SMB Series
Vishay General Semiconductor
www.vishay.com
100
150
TJ = 25 °C
Pulse Width (td)
tr = 10 µs
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
IPPM
10
1.0
0.1
100
50
0
Half Value - IPP
IPPM
2
10/1000 µs Waveform
as defined by R.E.A.
td
0.001
0.01
0.1
1
10
100
1000
1.0
3.0
4.0
0
2.0
tp - Pulse Duration (s)
t - Time (ms)
Fig. 3 - Pulse Waveform
Fig. 5 - Typical Transient Thermal Impedance
6000
1000
200
100
Measured at
Zero Bias
8.3 ms Single Half Sine-Wave
Uni-Directional Only
VR, Measured at
Stand-Off Voltage VWM
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Uni-Directional
Bi-Directional
10
1
10
100
200
1
10
100
VWM - Reverse Stand-Off Voltage (V)
Number of Cycles at 60 Hz
Fig. 4 - Typical Junction Capacitance
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMBJ)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.060 (1.52)
0.030 (0.76)
0.008
(0.203)
Max.
0.220 REF.
0.220 (5.59)
0.205 (5.21)
Revision: 06-Jun-14
Document Number: 88370
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 02-Oct-12
Document Number: 91000
1
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