PB3510-E3/45 [VISHAY]
Bridge Rectifier Diode, 1 Phase, 4.2A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE PB, 4 PIN;
| 型号： | PB3510-E3/45 |
| 厂家： | 
VISHAY |
| 描述： | Bridge Rectifier Diode, 1 Phase, 4.2A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE PB, 4 PIN 局域网 二极管 |
| 文件： | 总5页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PB3506, PB3508, PB3510
Vishay General Semiconductor
www.vishay.com
Enhanced isoCink+TM Bridge Rectifiers
FEATURES
isoCink+™
• UL recognition file number E312394 (QQQX2)
UL 1557 (see *)
• Enhanced high-current density single in-line
package
-
+
• Superior thermal conductivity
~
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
-
+
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Case Style PB
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
+
~
~
-
*Tested to UL standard for safety electrically isolated
semiconductor devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
MECHANICAL DATA
Case: PB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
Package
PB
35 A
Polarity: As marked on body
IF(AV)
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
VRRM
600 V, 800 V, 1000 V
350 A
IFSM
IR
10 μA
VF at IF = 17.5 A
TJ max.
0.90 V
150 °C
Diode variations
In-Line
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PB3506
PB3508
PB3510
UNIT
Maximum repetitive peak reverse voltage
VRRM
600
800
35
1000
V
T
C = 91 °C (1)
TA = 25 °C (2)
Average rectified forward current (Fig. 1, 2)
IO
A
A
4.2
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C
IFSM
350
Rating for fusing (t < 8.3 ms) TJ = 25 °C
I2t
508
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Notes
(1)
With heatsink
Without heatsink, free air
(2)
Revision: 26-Jun-13
Document Number: 84807
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PB3506, PB3508, PB3510
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
1.00
0.90
-
MAX.
1.10
1.00
10
UNIT
T
A = 25 °C
Maximum instantaneous forward
IF = 17.5 A
rated VR
VF
V
voltage per diode (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
Reverse current per diode (2)
IR
μA
pF
115
105
500
-
Typical junction capacitance per diode 4.0 V, 1 MHz
CJ
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: 10 ms pulse width
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PB3506
PB3508
PB3510
UNIT
(1)
RJC
0.8
20
Typical thermal resistance
°C/W
(2)
RJA
Notes
(1)
With 60 W air cooled heatsink
Without heatsink, free air
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (G)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
PB3506-E3/45
7.49
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
40
35
30
25
20
15
10
5
5
4
3
2
1
0
With Heatsink
Sine-Wave, R-Load
TC Measurement
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
Case Temperature (°C)
Ambient Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Forward Current Derating Curve
Revision: 26-Jun-13
Document Number: 84807
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PB3506, PB3508, PB3510
Vishay General Semiconductor
www.vishay.com
90
80
70
60
50
40
30
20
10
0
1000
100
10
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 85 °C
1
TA = 25 °C
0.1
0.01
0
4
8
12 16 20 24 28 32 36 40
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Dissipation
Fig. 5 - Typical Reverse Characteristics Per Diode
100
10
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
TA = 100 °C
100
TA = 25 °C
1
TA = 85 °C
10
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 26-Jun-13
Document Number: 84807
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PB3506, PB3508, PB3510
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type PB
Front Side View
Side View
1.193 (30.3)
0.201 (5.1)
1.169 (29.7)
0.177 (4.5)
0.161 (4.1)
0.138 (3.5)
0.118 (3.0) x 45°
CHAMFER
0.145 (3.7)
0.130 (3.3)
0.134 (3.4)
0.118 (3.0)
0.799 (20.3)
0.776 (19.7)
0.441 (11.2)
0.425 (10.8)
120° TYP.
5° TYP.
0.205 (5.20)
0.189 (4.80)
5° TYP.
0.106 (2.70)
0.091 (2.30)
0.118 (3.0)
0.102 (2.6)
0.165 (4.20)
0.150 (3.80)
0.094 (2.40)
0.079 (2.00)
0.708 (18.0)
0.669 (17.0)
0.043 (1.10)
0.035 (0.90)
0.032 (0.80)
0.024 (0.60)
0.402 (10.2)
0.386 (9.80)
0.303 (7.70)
0.287 (7.30)
0.303 (7.70)
0.287 (7.30)
Back Side View
1.041 (26.44) REF.
0.070 (1.78) REF.
0.088 (2.24)
REF.
0.633 (16.07)
REF.
0.214 (5.44) REF.
0.066 (1.68)
REF.
Revision: 26-Jun-13
Document Number: 84807
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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