RG1D/4 [VISHAY]
Rectifier Diode,;
| 型号： | RG1D/4 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, |
| 文件： | 总6页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RG1A to RG1M
Vishay Semiconductors
VISHAY
Fast Sinterglass Diode
\
Features
• High temperature metallurgically bonded con-
struction
• Hermetically sealed package
• Cavity-free glass passivated junction
• 1.0 ampere operation at T
mal runaway
= 55 °C with no ther-
amb
• Fast switching for high efficiency
17031
Mechanical Data
Case: Sintered glass case, JEDEC DO-204AP
Terminals: Solder plated axial leads, solderable per Mounting Position: Any
MILSTD- 750, Method 2026
Weight: 560 mg
Polarity: Color band denotes cathode end
Parts Table
Part
Type differentiation
Package
RG1A
RG1B
RG1D
RG1G
RG1J
RG1K
RG1M
VRRM = 50 V
VRRM = 100 V
VRRM = 200 V
VRRM = 400 V
VRRM = 600 V
VRRM = 800 V
VRRM = 1000 V
DO-204AP ( G1)
DO-204AP ( G1)
DO-204AP ( G1)
DO-204AP ( G1)
DO-204AP ( G1)
DO-204AP ( G1)
DO-204AP ( G1)
Document Number 86074
Rev. 2, 28-Jan-03
www.vishay.com
1
RG1A to RG1M
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
VR
VRRM
VR
VRRM
VR
VRRM
VR
VRRM
VR
VRRM
VR
VRRM
VR
Value
Unit
V
Reverse voltage = Repetitive peak reverse
voltage
see electrical characteristics
RG1A
=
50
100
200
400
600
800
1000
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
0.375 " (9.5 mm) lead length at Tamb = 55 °C
RG1B
RG1D
RG1G
RG1J
RG1K
RG1M
=
V
V
V
V
V
V
=
=
=
=
=
VRRM
IF(AV)
IFSM
Maximum average forward rectified current
Peak forward surge current
1.0
30
A
A
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum full load reverse current
full cycle average 0.375 " (9.5 mm) lead
length at Tamb = 25 °C
IR(AV)
IR(AV)
1.0
µA
µA
°C
full cycle average 0.375 " (9.5 mm) lead
length at Tamb = 100 °C
100
Operating junction and storage temperature
range
TJ,
- 55 to +
175
TSTG
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Symbol
RθJA
Value
55
Unit
K/W
Typical thermal resistance 1)
1) Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
VF
Typ.
Max
1.3
Unit
Maximum instantaneous forward
voltage
IF = 1 A
V
Reverse current
VR = VRRM
IR
trr
trr
trr
trr
trr
trr
trr
CJ
2.0
150
150
150
150
200
250
500
µA
ns
ns
ns
ns
ns
ns
ns
pF
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
VR = 4.0 V, f = 1 MHz
RG1A
RG1B
RG1D
RG1G
RG1J
RG1K
RG1M
Typical junction capacitance
15
www.vishay.com
2
Document Number 86074
Rev. 2, 28-Jan-03
RG1A to RG1M
VISHAY
Vishay Semiconductors
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
1.0
20
Resistive or Inductive Load
10
0.8
0.6
0.4
0.2
TJ = 125°C
Ipk / IAV
= π
1
Capacitance Load
Ipk / IAV =
5.0
10
20
TJ = 75°C
0.1
0.01
0.375" (9.5mm) Lead Length
TJ = 25°C
0
0
25
50
75
100
125
150
175
0
20
40
60
80
100
grg1a_01
Percent of Rated Peak Reverse Voltage (%)
Ambient Temperature (°C)
grg1a_04
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics
30
10
30
T
= 25°C
TA = 25°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
J
f = 1.0MHZ
Vsig, 50mVp-p max.
20
10
0
1
10
100
1
1
10
100
grg1a_02
Number of Cycles at 60 HZ
Reverse Voltage (V)
grg1a_05
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Junction Capacitance
20
10
TJ = 25°C
1
Pulse Width = 300µs
1% Duty Cycle
0.1
0.01
0.4
0.6
Instantaneous Forward Voltage (V)
0.8
1.0
1.2
1.4
1.6
1.8
grg1a_03
Figure 3. Typical Instantaneous Forward Characteristics
Document Number 86074
Rev. 2, 28-Jan-03
www.vishay.com
3
RG1A to RG1M
Vishay Semiconductors
VISHAY
Package Dimensions in Inches (mm)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.240 (6.1)
MAX.
0.150 (3.8)
0.100 (2.5)
DIA.
1.0 (25.4)
MIN.
17030
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4
Document Number 86074
Rev. 2, 28-Jan-03
RG1A to RG1M
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86074
Rev. 2, 28-Jan-03
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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