RGF1D/17 [VISHAY]
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214BA, PLASTIC, GF1, 2 PIN;
| 型号： | RGF1D/17 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214BA, PLASTIC, GF1, 2 PIN 光电二极管 |
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGF1A thru RGF1M
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Glass Passivated Junction
Fast Switching Rectifier
Reverse Voltage 50 to 1000V
Forward Current 1.0A
DO-214BA (GF1)
®
0.066 (1.68)
0.040 (1.02)
Mounting Pad Layout
0.066 MIN.
(1.68 MIN.)
0.094 MAX.
(2.38 MAX.)
Dimensions in inches and (millimeters)
0.187 (4.75)
0.167 (4.24)
Glass-plastic encapsulation technique is covered by Patent
No. 3,996,602, brazed-lead assembly by Patent No.
3,930,306 and lead forming by Patent No. 5,151,846
0.015 (0.38)
0.052 MIN.
(1.32 MIN.)
0.0065 (0.17)
0.220
(5.58) REF
0.108 (2.74)
0.118 (3.00)
0.100 (2.54)
0.098 (2.49)
Features
0.114 (2.90)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
0.006 (0.152) TYP.
0.060 (1.52)
0.030 (0.76)
0.094 (2.39)
0.226 (5.74)
0.196 (4.98)
• Ideal for surface mount automotive applications
• High temperature metallurgically bonded construction
• Cavity-free glass passivated junction
Mechanical Data
•
Capable of meeting environmental standards of MIL-S-19500
Case: JEDEC DO-214BA, molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Built-in strain relief • Easy pick and place
• Fast switching for high efficiency
Polarity: Color band denotes cathode end
• High temperature soldering guaranteed:
450°C/5 seconds at terminals.
Mounting Position: Any
Weight: 0.0048 oz, 0.12 g
Packaging codes/options:
• Complete device submersible temperature of 265°C for
10 seconds in solder bath
19/6.5K per 13” Reel (12mm Tape)
17/1.5K per 7” Reel (12mm Tape)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
Device marking code
RA
50
35
50
RB
100
70
RD
200
140
200
RG
400
280
400
1.0
RJ
RK
800 1000
560 700
800 1000
RM
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
600
420
600
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 120°C
100
IF(AV)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
30
50
A
µA
Max. full load reverse current, full cycle average TA = 55°C IR(AV)
Typical thermal resistance(1)
RΘJA
RΘJL
80
28
°C/W
°C
Operating junction and storage temperature range
TJ,TSTG
–65 to +175
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
Maximum instantaneous forward voltage at 1.0A
VF
1.30
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 125°C
5.0
100
IR
µA
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25 A
trr
150
250
500
ns
Typical junction capacitance at 4.0V, 1MHz
CJ
8.5
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
Document Number 88697
08-Feb-02
www.vishay.com
1
RGF1A thru RGF1M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
30
25
20
15
10
5
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
1
0.5
60 HZ
Resistive or
Inductive Load
0
0
1
10
100
100
110
120
130
140
150
160
175
Lead Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
10
10
1
TJ = 125°C
1
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
TJ = 100°C
0.1
0.1
TJ = 25°C
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Transient
Thermal Impedance
Fig. 5 – Typical Junction
Capacitance
100
10
1
100
10
T = 25°C
Mounted on
0.2 x 0.2" (5. x 7mm)
Copper Pad Areas
J
f = 1.0MHZ
Vsig = 50mVp-p
1
0.1
0.01
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88697
08-Feb-02
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