RGP10G/73 [VISHAY]
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;
| 型号： | RGP10G/73 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN |
| 文件： | 总4页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGP10A thru RGP10M
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
1.0 A
50 V to 1000 V
30 A
®
150 ns, 250 ns, 500 ns
5.0 µA
IR
*
d
VF
1.3 V
e
t
n
e
t
Tj max.
175 °C
a
P
*Glass Encapsulation
DO-204AL (DO-41)
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
Features
Mechanical Data
• Superectifier structure for High Reliability
condition
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Polarity: Color band denotes cathode end
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and Telecommunication
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M
Unit
V
Maximum repetitive peak reverse
voltage
VRRM
50
100
200
400
600
800
1000
Maximum RMS voltage
VRMS
VDC
35
50
70
140
200
280
400
1.0
420
600
560
800
700
V
V
A
Maximum DC blocking voltage
100
1000
Maximum average forward rectified
current 0.375" (9.5 mm) lead length
at TA = 55 °C
IF(AV)
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load
IFSM
30
A
Maximum full load reverse current,
full cycle average 0.375" (9.5 mm)
lead length TA = 55 °C
IR(AV)
100
µA
Operating junction and storage
temperature range
TJ,TSTG
- 65 to + 175
°C
Document Number 88700
19-Sep-05
www.vishay.com
1
RGP10A thru RGP10M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Maximum
Test condition
at 1.0 A
Symbol RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M Unit
VF
1.3
V
instantaneous
forward voltage
Maximum DC
reverse current at
rated DC blocking
voltage
TA= 25 °C
IR
5.0
200
µA
TA= 150 °C
Maximum reverse IF = 0.5 A, IR = 1.0 A,
trr
150
250
500
ns
recovery time
Irr = 0.25 A
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
15
pF
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Typical thermal resistance (1)
Notes:
Symbol RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M Unit
RθJA 55 °C/W
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
1.0
30
20
Resistive or Inductive Load
TJ = TJ max.
8.3 ms Single Half Sine-Wave
0.75
0.5
0.25
0
10
0
0.375" (9.5mm) Lead Length
25
50
75
100
125
150
175
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88700
19-Sep-05
RGP10A thru RGP10M
Vishay General Semiconductor
10
1
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
10
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
0.1
0.01
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
10
1
20
10
TJ = 125 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
0.1
0.01
0.01
0
20
40
60
80
100
0.1
1
10
100
t, Pulse Duration (sec.)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number 88700
19-Sep-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
RGP10GE-E3/23
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
VISHAY
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