RGP30DHE3/73 [VISHAY]
DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode;
| 型号： | RGP30DHE3/73 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode 功效 二极管 |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGP30A, RGP30B, RGP30D, RGP30G, RGP30J, RGP30K, RGP30M
www.vishay.com
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
SUPERECTIFIER®
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current, typical IR less than 0.2 μA
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-201AD
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer and telecommunication.
IF(AV)
3.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
IFSM
VF
125 A
1.3 V
MECHANICAL DATA
Case: DO-201AD, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IR
5.0 μA
TJ max.
Package
Diode variation
175 °C
DO-201AD
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
IF(AV)
IFSM
3.0
A
A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
125
Maximum full load reverse current,
full cycle average 0.375" (9.5 mm)
lead length at TA = 55 °C
IR(AV)
100
μA
°C
Operating junction and
storage temperature range
TJ, TSTG
-65 to +175
Revision: 07-Nov-16
Document Number: 88704
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RGP30A, RGP30B, RGP30D, RGP30G, RGP30J, RGP30K, RGP30M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT
Maximum
instantaneous
forward voltage
3.0 A
VF
1.3
V
Maximum DC
reverse current
at rated DC
TA = 25 °C
5.0
IR
μA
TA = 125 °C
100
blocking voltage
Maximumreverse IF = 0.5 A, IR = 1.0 A,
trr
150
250
500
ns
recovery time
Irr = 0.25 A
Typical junction
capacitance
4.0 V, 1 MHz
CJ
60
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT
(1)
Typical thermal resistance
RJA
20
°C/W
Note
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION (Example)
PREFERRED P/N
RGP30J-E3/54
RGP30J-E3/73
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.28
1.28
54
73
1400
1000
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
4.0
3.0
2.0
1.0
0
1000
100
10
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
25
50
75
100
125
150
175
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 07-Nov-16
Document Number: 88704
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RGP30A, RGP30B, RGP30D, RGP30G, RGP30J, RGP30K, RGP30M
www.vishay.com
Vishay General Semiconductor
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.1
0.01
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Revision: 07-Nov-16
Document Number: 88704
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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