RGP30G-HE3 [VISHAY]

DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode;
RGP30G-HE3
型号: RGP30G-HE3
厂家: VISHAY    VISHAY
描述:

DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode

功效 二极管
文件: 总4页 (文件大小:294K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RGP30A thru RGP30M  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
3.0 A  
50 V to 1000 V  
125 A  
150 ns, 250 ns, 500 ns  
5.0 µA  
IR  
*
d
e
t
VF  
1.3 V  
n
e
t
a
Tj max.  
175 °C  
P
DO-201AD  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly by  
Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
condition  
Case: DO-201AD, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current, typical I less than 0.2 µA  
R
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
3.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum RMS voltage  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
Peak forward surge current 8.3 ms single  
half sine-wave superimposed on rated load  
IFSM  
125  
100  
A
Maximum full load reverse current, full  
cycle average 0.375" (9.5 mm) lead length  
at TA = 55 °C  
IR(AV)  
µA  
Operating junction and storage  
temperature range  
TJ,TSTG  
- 65 to + 175  
°C  
Document Number 88704  
19-Sep-05  
www.vishay.com  
1
RGP30A thru RGP30M  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Maximum  
Test condition  
at 3.0 A  
Symbol RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M Unit  
VF  
1.3  
V
instantaneous  
forward voltage  
Maximum DC  
reverse current at  
rated DC blocking  
voltage  
TA = 25 °C  
TA = 125 °C  
IR  
5.0  
100  
µA  
Maximum reverse IF = 0.5 A, IR = 1.0 A,  
trr  
150  
250  
500  
ns  
recovery time  
Irr = 0.25 A  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
60  
pF  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance(1)  
Notes:  
Symbol RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M Unit  
RθJA 20 °C/W  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
4.0  
3.0  
2.0  
200  
100  
Resistive or Inductive Load  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
1.0  
0
0.375" (9.5mm) Lead Length  
10  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Ambient Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88704  
19-Sep-05  
RGP30A thru RGP30M  
Vishay General Semiconductor  
10  
1
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
TJ = 25 °C  
Pulse Width = 300 µs  
1% Duty Cycle  
0.1  
0.01  
10  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
20  
TJ = 125 °C  
10  
TJ = 100 °C  
1
TJ = 75 °C  
0.1  
0.01  
TJ  
= 25 °C  
0
20  
40  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
Package outline dimensions in inches (millimeters)  
DO-201AD  
1.0 (25.4)  
Min.  
0.210 (5.3)  
0.190 (4.8)  
Dia.  
0.375 (9.5)  
0.285 (7.2)  
1.0 (25.4)  
Min.  
0.052 (1.32)  
0.048 (1.22)  
Dia.  
Document Number 88704  
19-Sep-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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