RS1B/2Q-E3 [VISHAY]
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Signal Diode;
| 型号： | RS1B/2Q-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Signal Diode 光电二极管 |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RS1A thru RS1K
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Fast Switching Rectifier
DO-214AC (SMA)
Reverse Voltage 50 to 800V
Forward Current 1.0A
Cathode Band
0.065 (1.65)
0.049 (1.25)
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.066 MIN.
(1.68 MIN.)
0.094 MAX.
(2.38 MAX.)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
0.090 (2.29)
0.078 (1.98)
Dimensions in inches
and (millimeters)
0.060 (1.52)
0.008 (0.203)
MAX.
0.030 (0.76)
0.208 (5.28)
0.194 (4.93)
Features
Mechanical Data
Case: JEDEC DO-214AC molded plastic over glass
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.002 oz., 0.064 g
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low profile surface mount package
• Built-in strain relief
• Fast switching for high efficiency
• Glass passivated chip junction
• High temperature soldering: 250°C/10 seconds
at terminals
Packaging codes/options:
2Q/7.5K per 13" Reel (12mm Tape)
2P/1.8K per 7" Reel (12mm Tape)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbols RS1A RS1B RS1D RS1G RS1J RS1K Units
Device marking code
RA
50
35
50
RB
100
70
RD
200
140
200
RG
400
280
400
RJ
RK
800
500
800
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
600
420
600
V
V
V
100
Maximum average forward rectified current
at TL=90°C
IF(AV)
1.0
30
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) TL=90°C
IFSM
A
RΘJA
RΘJL
105
32
Typical thermal resistance (1)
°C/W
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 1.0A
VF
1.30
V
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=125°C
5.0
50
IR
µA
Maximum reverse recovery time at
IF=0.5A, IR=1.0A, Irr=0.25A
trr
150
10
250
500
ns
Typical junction capacitance at 4.0V, 1MHz
CJ
7.0
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad area
Document Number 88707
15-Sep-03
www.vishay.com
1
RS1A thru RS1K
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
50
40
30
1.2
Resistive or Inductive Load
TL = 90°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
1.0
0.5
20
10
P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0
0
140
20
40
60
80
160 180
0
100 120
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
30
10
30
10
TJ = 125°C
TJ = 125°C
1
0.1
1
0.1
TJ = 100°C
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
TJ = 25°C
80
0.01
0.01
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
20
40
60
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Transient
Thermal Impedance
Fig. 5 – Typical Junction
Capacitance
100
30
10
Mounted on 0.2 x 0.2" (5 x 5mm)
Copper Pad Area
T
= 25°C
J
f = 1.0MHZ
Vsig = 50mVp-p
RS1A-RS1G
10
RS1J-RS1K
1
0.01
1
0.1
1
10
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88707
15-Sep-03
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