RS1PD-HE3/84A [VISHAY]
1A, 200V, SILICON, SIGNAL DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN;
| 型号： | RS1PD-HE3/84A |
| 厂家： | 
VISHAY |
| 描述： | 1A, 200V, SILICON, SIGNAL DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN 光电二极管 |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RS1PB thru RS1PJ
Vishay General Semiconductor
New Product
High Current Density Surface Mount
Glass-Passivated Fast Switching Rectifier
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated chip junction
• Fast switching for high efficiency
• Low thermal resistance
• High forward surge capability
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-220AA (SMP)
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and telecommunication.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
1 A
100 V, 200 V, 400 V, 600 V
30 A
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
150 ns, 250 ns
1 µA
IR
Tj max.
150 °C
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
PARAMETER
SYMBOL
RS1PB
RS1PD
RD
RS1PG
RG
RS1PJ
RJ
UNIT
Device marking code
RB
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
VRRM
IF(AV)
100
200
400
600
V
A
1.0
30
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
RS1PB
RS1PD RS1PG
RS1PJ
UNIT
Maximum instantaneous forward voltage (1) at = 1.0 A
VF
1.3
V
Maximum reverse current at rated
VR (1) voltage
TA = 25 °C
A = 125 °C
1.0
60
IR
µA
T
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Maximum reverse recovery time
Typical junction capacitance
trr
150
250
ns
at 4.0 V, 1 MHz
CJ
9
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Document Number 88934
23-Jun-06
www.vishay.com
1
RS1PB thru RS1PJ
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T = 25 °C, unless otherwise noted)
A
PARAMETER
SYMBOL
RS1PB
RS1PD
115
RS1PG
RS1PJ
UNIT
RθJA
RθJL
RθJC
Typical thermal resistance (1)
15
20
°C/W
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJL is measured
at the terminal of cathode band. RθJC is measured at the top centre of the body
ORDERING INFORMATION
PREFERRED P/N
RS1PB-E3/84A
RS1PB-E3/85A
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
3000
DELIVERY MODE
0.024
84A
85A
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
0.024
10000
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
1.2
1.0
0.8
0.6
100
10
Pulse Width = 300 µs
1 % Duty Cycle
Tj = 150 °C
Tj = 125 °C
1
0.4
TL measured
at the cathode band terminal
0.2
Tj = 25 °C
0.1
0.01
0.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
80
90
100
110
120
130
140
150
Instantaneous Forward Voltage (V)
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
Figure 3. Typical Instantaneous Forward Characteristics
30
1000
T
j
= 150 °C
= 125 °C
25
20
100
10
T
j
15
10
1
Tj = 25 °C
0.1
0.01
5
0
10
20
30
40
50
60
70
80
90 100
1
10
100
Number of Cycles at 50 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Reverse Characteristics
www.vishay.com
2
Document Number 88934
23-Jun-06
RS1PB thru RS1PJ
Vishay General Semiconductor
100
1000
100
10
T
j
= 25 °C
f = 1.0 MHz
sig = 50 mVp-p
V
10
1
1
0.1
1
10
100
0.01
0.1
1
10
100
t - Pulse Duration (sec.)
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF
Cathode band
0.036 (0.91)
0.024 (0.61)
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.030
(0.762)
0.105
(2.67)
0.025
(0.635)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.050
(1.27)
0.100
(2.54)
0.012 (0.30)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
Document Number 88934
23-Jun-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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