RS3K/9T [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AB, PLASTIC, SMC, 2 PIN;
| 型号： | RS3K/9T |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AB, PLASTIC, SMC, 2 PIN 功效 光电二极管 |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RS3A thru RS3K
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Fast Switching Rectifier
DO-214AB (SMC)
Reverse Voltage 50 to 800V
Forward Current 3.0A
Cathode Band
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
Mounting Pad Layout
0.185 MAX.
(4.69 MAX.)
Dimensions in inches
and (millimeters)
0.280 (7.11)
0.260 (6.60)
0.126 MIN.
(3.20 MIN.)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 MIN.
(1.52 MIN.)
0.060 (1.52)
0.030 (0.76)
0.320 REF
0.008
(0.203)
Max.
0.320 (8.13)
0.305 (7.75)
Features
Mechanical Data
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low profile surface mount package
• Built-in strain relief
• Fast switching for high efficiency
• Easy pick and place
Case: JEDEC DO-214AB molded plastic over glass
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 oz., 0.25 g
Packaging codes/options:
• Glass passivated chip junction
• High temperature soldering: 250°C/10 seconds at terminals
9/3.5K per 13" Reel (16mm Tape)
7/850 EA per 7" Reel (16mm Tape)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameters
Symbols RS3A RS3B RS3D RS3G RS3J RS3K Units
Device marking code
RA
50
35
50
RB
100
70
RD
200
140
200
RG
400
280
400
RJ
RK
800
500
800
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
600
420
600
V
V
V
Maximum DC blocking voltage
100
Maximum average forward rectified current
at TL=75°C
IF(AV)
3.0
A
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) TL=75°C
IFSM
100
Typical thermal resistance (1)
RΘJA
RΘJL
50
15
°C/W
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 2.5A
VF
1.3
V
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=125°C
10
250
IR
µA
Maximum reverse recovery time
IF=0.5A, IR=1.0A, Irr=0.25A
trr
150
44
250
500
ns
Typical junction capacitance at 4.0V, 1MHz
CJ
34
pF
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on
P.C.B. with 0.3 x 0.3” (8.0 x 8.0mm) copper pad area
Document Number 88709
19-Apr-04
www.vishay.com
1
RS3A thru RS3K
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
150
125
100
75
3.0
Resistive or Inductive Load
TL = 75°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
2.5
2.0
50
1.0
25
P.C.B. Mounted
0.3 x 0.3" (8.0 x 8.0 mm)
Copper Pad Areas
0
0
1
10
100
0
50
100
150
200
Lead Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
100
10
100
10
TJ = 125°C
TJ = 125°C
TJ = 75°C
TJ = 25°C
1
Pulse Width = 300µs
1% Duty Cycle
1
TJ = 25°C
0.1
0.01
TJ = - 40°C
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
Fig. 6 – Typical Transient Thermal
Impedance
100
10
100
Mounted on
0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
RS3A-RS3G
RS3J-RS3K
10
1
0.1
1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration, sec
www.vishay.com
2
Document Number 88709
19-Apr-04
相关型号：
RS3K/9T-E3
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB, PLASTIC, SMC, 2 PIN, Rectifier Diode
VISHAY
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