S1D-M3 [VISHAY]
Ideal for automated placement;
| 型号： | S1D-M3 |
| 厂家： | 
VISHAY |
| 描述： | Ideal for automated placement |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S1A-M3, S1B-M3, S1D-M3, S1G-M3, S1J-M3, S1K-M3, S1M-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
MECHANICAL DATA
IFSM
40 A, 30 A
5 mJ
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
commercial grade
EAS
IR
1.0 μA, 5.0 μA
1.1 V
- halogen-free, RoHS-compliant, and
VF
TJ max.
Package
Diode variations
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
DO-214AC (SMA)
Single die
Polarity: Color band denotes cathode end
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1A
S1B
SB
S1D
SD
S1G
SG
S1J
SJ
S1K
SK
S1M UNIT
Device marking code
SA
SM
Max. recurrent peak reverse voltage
Max. RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
V
V
V
A
Max. DC blocking voltage
Max. average forward rectified current (fig. 1)
100
1000
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
30
A
Non-repetitive peak reverse avalanche energy
EAS
5
mJ
°C
at 25 °C, IAS = 1 A, L = 10 mH
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Revision: 19-Feb-16
Document Number: 89272
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A-M3, S1B-M3, S1D-M3, S1G-M3, S1J-M3, S1K-M3, S1M-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Max. instantaneous forward
voltage
1.0 A
VF
1.1
V
TA = 25 °C
1.0
5.0
Max. DC reverse current
at rated DC blocking voltage
IR
μA
TA = 125 °C
50
IF = 0.5 A, IR = 1.0 A,
Typical reverse recovery time
Typical junction capacitance
trr
1.8
μs
Irr = 0.25 A
4.0 V, 1 MHz
CJ
12
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
75
S1G
S1J
S1K
S1M
UNIT
RJA
85
30
Typical thermal resistance (1)
°C/W
RJL
27
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S1J-M3/61T
0.064
61T
5AT
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
S1J-M3/5AT
0.064
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
0
TL = 110 °C
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
S1A thru S1J
S1A thru S1J
S1K, S1M
S1K, S1M
0.2" x 0.2" (5.0 mm x 5.0 mm)
Thick Copper Pad Areas
1
10
100
0
20
40
60
80
100
120 140
160
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Revision: 19-Feb-16
Document Number: 89272
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A-M3, S1B-M3, S1D-M3, S1G-M3, S1J-M3, S1K-M3, S1M-M3
www.vishay.com
Vishay General Semiconductor
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 25 °C
10
1
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
1
0.01
0.1
1
10
100
0.4
0.8
1.2
1.6
2.0
Reverse Voltage (V)
Instantaneous Forward Voltage (V
)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10
1000
100
10
TJ = 125 °C
1
S1K, S1M
TJ = 75 °C
0.1
S1A thru S1J
0.01
Units Mounted on
TJ = 25 °C
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
1
0.01
0.001
0.1
1
10
100
0
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 19-Feb-16
Document Number: 89272
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 13-Jun-16
Document Number: 91000
1
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