S1K [VISHAY]
Surface Mount Glass Passivated Rectifier; 表面安装玻璃钝化整流
| 型号： | S1K |
| 厂家： | 
VISHAY |
| 描述： | Surface Mount Glass Passivated Rectifier |
| 文件： | 总4页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
S1A thru S1M
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
PRIMARY CHARACTERISTICS
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
IF(AV)
1.0 A
• Halogen-free according to IEC 61249-2-21 definition
VRRM
IFSM
EAS
50 V to 1000 V
40 A, 30 A
5 mJ
MECHANICAL DATA
IR
1.0 μA, 5.0 μA
1.1 V
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
VF
Base P/N-M3
commercial grade
- halogen-free, RoHS compliant, and
TJ max.
150 °C
TYPICAL APPLICATIONS
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1A
S1B
SB
S1D
SD
S1G
SG
S1J
SJ
S1K
SK
S1M UNIT
Device marking code
SA
SM
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
100
1000
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
30
A
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
EAS
5
mJ
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Document Number: 89272
Revision: 19-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
S1A thru S1M
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Maximum instantaneous
forward voltage
1.0 A
VF
1.1
V
TA = 25 °C
TA = 125 °C
1.0
5.0
Maximum DC reverse current
at rated DC blocking voltage
IR
μA
50
1.8
12
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical reverse recovery time
Typical junction capacitance
trr
μs
4.0 V, 1 MHz
CJ
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
75
S1G
S1J
S1K
S1M
UNIT
RJA
85
30
Typical thermal resistance (1)
°C/W
RJL
27
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S1J-M3/61T
0.064
61T
5AT
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
S1J-M3/5AT
0.064
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.2
100
TL = 110 °C
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
1.0
S1A thru S1J
S1A thru S1J
0.8
0.6
10
S1K, S1M
S1K, S1M
0.4
0.2
0.2" x 0.2" (5.0 mm x 5.0 mm)
Thick Copper Pad Areas
0
0
1
10
Number of Cycles at 60 Hz
100
0
20
40
60
80
100
120 140
160
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89272
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
S1A thru S1M
Vishay General Semiconductor
100
10
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 25 °C
1
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
0.01
0.1
1
10
100
0.4
0.8
1.2
1.6
2.0
Reverse Voltage (V)
Instantaneous Forward Voltage (V
)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10
1000
100
10
TJ = 125 °C
1
S1K, S1M
TJ = 75 °C
0.1
S1A thru S1J
0.01
Units Mounted on
TJ = 25 °C
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
1
0.01
0.001
0.1
1
10
100
0
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89272
Revision: 19-Apr-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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