S1PBHE3/85A [VISHAY]

Rectifier Diode, 1 Element, 1A, 100V V(RRM),;
S1PBHE3/85A
型号: S1PBHE3/85A
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Element, 1A, 100V V(RRM),

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New Product  
S1PB thru S1PM  
Vishay General Semiconductor  
High Current Density Surface Mount  
Glass-Passivated Rectifiers  
FEATURES  
• Very low profile - typical height of 1.0 mm  
eSMPTM Series  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
DO-220AA (SMP)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
General purpose, polarity protection, and rail-to-rail  
protection in both consumer and automotive  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1 A  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
VRRM  
IR  
100 V to 1000 V  
1 µA  
VF  
0.95 V  
TJ max.  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
S1PB  
S1PD  
SD  
S1PG  
SG  
S1PJ  
SJ  
S1PK  
SK  
S1PM  
SM  
UNIT  
Device marking code  
SB  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
Average forward current  
100  
1000  
IF(AV)  
1.0  
30  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number: 88917  
Revision: 26-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
New Product  
S1PB thru S1PM  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL S1PB  
S1PD  
S1PG  
S1PJ  
S1PK  
S1PM UNIT  
Maximum instantaneous  
forward voltage (1)  
IF = 1.0 A  
IF = 1.0 A  
TJ = 25 °C  
TJ = 125 °C  
1.1  
0.95  
VF  
V
TJ = 25 °C  
TJ = 125 °C  
1.0  
50  
1.0  
100  
Maximum reverse current (2)  
Typical reverse recovery time  
rated VR  
IR  
µA  
IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
trr  
1.8  
6.0  
µs  
pF  
Typical junction capacitance time 4.0 V, 1 MHz  
Notes:  
CJ  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL S1PB  
S1PD  
S1PG  
S1PJ  
S1PK  
S1PM UNIT  
RθJA  
RθJL  
RθJC  
105  
15  
20  
Typical thermal resistance (1)  
°C/W  
Note:  
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJC is measured  
at the terminal of cathode band. RθJC is measured at the top centre of the body  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
3000  
DELIVERY MODE  
S1PJ-E3/84A  
0.024  
84A  
85A  
84A  
85A  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
S1PJ-E3/85A  
0.024  
10 000  
S1PJHE3/84A (1)  
S1PJHE3/85A (1)  
0.024  
3000  
0.024  
10 000  
Note:  
(1) Automotive grade AEC Q101 qualified  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
1.2  
1.0  
0.8  
0.6  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
D = 0.8  
D = 0.5  
D = 0.3  
D = 0.2  
D = 1.0  
D = 0.1  
T
0.4  
TL Measured  
at the Cathode Band Terminal  
0.2  
D = tp/T  
tp  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
80  
90  
100  
110  
120  
130  
140  
150  
Lead Temperature (°C)  
Average Forward Current  
Figure 2. Forward Power Loss Characteristics  
Figure 1. Maximum Forward Current Derating Curve  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88917  
Revision: 26-May-08  
New Product  
S1PB thru S1PM  
Vishay General Semiconductor  
30  
25  
20  
15  
10  
5
100  
10  
1
0
1
10  
100  
0.1  
1
10  
100  
Number of Cycles at 50 Hz  
Reverse Voltage (V)  
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current  
Figure 6. Typical Junction Capacitance  
100  
1000  
100  
10  
10  
TJ = 150 °C  
1
TJ = 25 °C  
0.1  
TJ = 125 °C  
1
0.01  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
t - Pulse Duration (s)  
Figure 4. Typical Instantaneous Forward Characteristics  
Figure 7. Typical Transient Thermal Impedance  
100  
TJ = 150 °C  
T
J = 125 °C  
10  
1
0.1  
TJ = 25 °C  
0.01  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 5. Typical Reverse Leakage Characteristics  
Document Number: 88917  
Revision: 26-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
New Product  
S1PB thru S1PM  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-220AA (SMP)  
0.012 (0.30) REF.  
Cathode band  
0.086 (2.18)  
0.074 (1.88)  
0.053 (1.35)  
0.041 (1.05)  
0.036 (0.91)  
0.024 (0.61)  
0.142 (3.61)  
0.126 (3.19)  
0.158 (4.00)  
0.146 (3.70)  
0.103 (2.60)  
0.032 (0.80)  
0.087 (2.20)  
0.016 (0.40)  
0.025 0.030  
(0.635) (0.762)  
0.105  
(2.67)  
0.013 (0.35)  
0.004 (0.10)  
0.045 (1.15)  
0.033 (0.85)  
0.100  
(2.54)  
0.050  
(1.27)  
0.012 (0.30) 0.018 (0.45)  
0.000 (0.00) 0.006 (0.15)  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88917  
Revision: 26-May-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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