S1PM-HE3/85A [VISHAY]
1A, 1000V, SILICON, SIGNAL DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN;
| 型号： | S1PM-HE3/85A |
| 厂家： | 
VISHAY |
| 描述： | 1A, 1000V, SILICON, SIGNAL DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN 光电二极管 |
| 文件： | 总5页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S1PB thru S1PM
Vishay General Semiconductor
New Product
High Current Density Surface Mount
Glass-Passivated Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
DO-220AA (SMP)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-
to-rail protection in both consumer and automotive
applications.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IR
1 A
100 V to 1000 V
1 µA
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
VF
0.95 V
Tj max.
150 °C
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL S1PB
S1PD
SD
S1PG
SG
S1PJ
SJ
S1PK
SK
S1PM
SM
UNIT
Device marking code
SB
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
A
Maximum DC blocking voltage
Average forward current
100
1000
IF(AV)
1.0
30
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number 88917
21-Sep-06
www.vishay.com
1
S1PB thru S1PM
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL S1PB
S1PD
S1PG
S1PJ
S1PK
S1PM
UNIT
Maximum
at IF = 1.0 A,
at IF = 1.0 A,
Tj = 25 °C
Tj = 125 °C
1.1
0.95
instantaneous
VF
V
forward voltage (1)
Maximum reverse
current (1)
Tj = 25 °C
Tj = 125 °C
1.0
50
1.0
100
at rated VR
IR
µA
µs
pF
Typical reverse
recovery time
at = 0.5 A, IR = 1.0 A, Irr = 0.25 A
at 4.0 V, 1 MHz
trr
1.8
6.0
Typical junction
capacitance time
CJ
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
S1PB
S1PD
S1PG
S1PJ
S1PK
S1PM
UNIT
RθJA
RθJL
RθJC
105
15
20
Typical thermal resistance (1)
°C/W
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJC is measured
at the terminal of cathode band. RθJC is measured at the top centre of the body
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
3000
DELIVERY MODE
S1PJ-E3/84A
0.024
84A
85A
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
S1PJ-E3/85A
0.024
10000
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
1.2
1.0
1.2
1.0
0.8
0.6
0.4
D = 0.8
D = 0.5
D = 0.3
D = 0.2
0.8
D = 1.0
D = 0.1
0.6
0.4
0.2
T
T
L
measured
at the cathode band terminal
D = tp/T tp
0.2
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
80
90
100
110
120
130
140
150
Average Forward Current
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
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Document Number 88917
21-Sep-06
S1PB thru S1PM
Vishay General Semiconductor
30
1000
25
20
15
100
10
05
0
1
0.1
1
10
100
1
10
100
Number of Cycles at 50 Hz
Reverse Voltage (V)
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 6. Typical Junction Capacitance
100
10
1000
100
10
Tj = 150 °C
1
0.1
Tj = 25 °C
T
j
= 125 °C
1.0
0.01
1
0.01
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.0
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 4. Typical Instantaneous Forward Characteristics
Figure 7. Typical Transient Thermal Impedance
100
T
j
= 150 °C
= 125 °C
10
Tj
1
0.1
Tj = 25 °C
0.01
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Leakage Characteristics
Document Number 88917
21-Sep-06
www.vishay.com
3
S1PB thru S1PM
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF
Cathode band
0.036 (0.91)
0.024 (0.61)
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.030
(0.762)
0.105
(2.67)
0.025
(0.635)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.050
(1.27)
0.100
0.012 (0.30)
(2.54)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
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Document Number 88917
21-Sep-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
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