S2J-M3 [VISHAY]
Glass passivated pellet chip junction;型号: | S2J-M3 |
厂家: | VISHAY |
描述: | Glass passivated pellet chip junction |
文件: | 总4页 (文件大小:89K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
S2A-M3, S2B-M3, S2D-M3, S2G-M3, S2J-M3, S2K-M3, S2M-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
DO-214AA (SMB)
• AEC-Q101 qualified available
-Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
50V,100V,200V,400V,600V,
800 V, 1000 V
VRRM
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - RoHS-compliant, commercial grade
Base P/NHM3 - RoHS-compliant, AEC-Q101 qualified
IFSM
IR
50 A
1.0 μA
VF
1.15 V
TJ max.
Package
Diode variations
150 °C
DO-214AA (SMB)
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S2A
S2B
SB
S2D
SD
S2G
SG
S2J
SJ
S2K
SK
S2M UNIT
Device marking code
Max. repetitive peak reverse voltage
Max. RMS voltage
SA
SM
VRRM
VRMS
50
35
50
100
70
200
140
200
400
280
600
420
600
800
560
800
1000
700
V
V
Max. DC blocking voltage
VDC
100
400
1.5
1000
V
A
Max. average forward rectified current at TL= 100 °C
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Operating and storage temperature range
TJ, TSTG
-55 to +150
°C
Revision: 19-Feb-16
Document Number: 89493
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S2A-M3, S2B-M3, S2D-M3, S2G-M3, S2J-M3, S2K-M3, S2M-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S2A
S2B
S2D
S2G
S2J
S2K
S2M
UNIT
Max. instantaneous forward
voltage
1.5 A
VF
1.15
V
T
A = 25 °C
1.0
Max. DC reverse current at
rated DC blocking voltage
IR
μA
TA = 125 °C
125
IF = 0.5 A, IR = 1.0 A,
Typical reverse recovery time
Typical junction capacitance
trr
2.0
16
μs
I
rr = 0.25 A
4.0 V, 1 MHz
CJ
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S2A
S2B
S2D
S2G
S2J
S2K
S2M
UNIT
RJA
RJL
53
16
Typical thermal resistance (1)
°C/W
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S2J-M3/52T
0.096
52T
5BT
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
S2J-M3/5BT
0.096
3200
S2JHM3/52T (1)
0.096
0.096
52T
5BT
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
S2JHM3/5BT (1)
3200
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
50
40
30
20
10
0
Resistive or Inductive Load
TL = 100 °C
8.3 ms Single Half Sine-Wave
60 Hz Resistive or
Inductive Load
P. C. B. M o unted
0.27" x 0.27" (7.0 mm x 7.0 mm)
Copper Pad Areas
50
70
90
110
130
150
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Revision: 19-Feb-16
Document Number: 89493
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S2A-M3, S2B-M3, S2D-M3, S2G-M3, S2J-M3, S2K-M3, S2M-M3
www.vishay.com
Vishay General Semiconductor
10
100
TJ = 150 °C
TJ = 125 °C
1
10
TJ = 25 °C
0.1
0.01
1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
100
10
1
TJ = 150 °C
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
0.01
0.1
1
10
100
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 19-Feb-16
Document Number: 89493
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 13-Jun-16
Document Number: 91000
1
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