S414D [VISHAY]

Fast Soft Recovery Rectifier; 快速软恢复整流器
S414D
型号: S414D
厂家: VISHAY    VISHAY
描述:

Fast Soft Recovery Rectifier
快速软恢复整流器

整流二极管
文件: 总3页 (文件大小:39K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S414D  
Vishay Telefunken  
Fast Soft Recovery Rectifier  
Features  
Hermetically sealed glass envelope  
Glass passivated  
Low reverse current  
Miniature axial leaded  
High reverse voltage  
Applications  
95 10526  
TV and monitor  
Electronic ballast  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage=Repetitive peak reverse  
voltage  
Test Conditions  
Type  
Symbol  
V =V  
Value  
1000  
Unit  
V
R
RRM  
Peak forward surge current  
Average forward current  
Junction and storage temperature range  
t =8.3ms, half–sinewave  
I
30  
1.25  
–55...+175  
A
A
C
p
FSM  
T
=33 C, l = 10 mm  
I
FAV  
T =T  
j
amb  
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
lead length l = 10mm, T = constant  
Symbol  
Value  
60  
Unit  
K/W  
R
thJA  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type Symbol Min  
Typ Max Unit  
Forward voltage  
Reverse current  
I =1A  
V
1.3  
5
150  
V
A
A
F
F
V =V  
I
I
R
RRM  
R
V =V  
, T =150 C  
R
RRM  
j
R
Reverse breakdown voltage  
Reverse recovery time  
I =100 A  
V
1000  
V
ns  
R
(BR)R  
I =0.5A, I =1A, i =0.25A  
t
rr  
500  
F
R
R
Document Number 86056  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (3)  
S414D  
Vishay Telefunken  
Characteristics (Tj = 25 C unless otherwise specified)  
450  
400  
350  
300  
250  
200  
150  
100  
50  
100  
V
= V  
RRM  
R
10  
R
=
thJA  
60K/W  
110K/W  
1
T =175°C  
j
0.1  
0.01  
150K/W  
T =25°C  
j
0.001  
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
25  
50  
75  
100  
125  
150  
175  
15951  
V
– Forward Voltage ( V )  
15953  
T – Junction Temperature ( °C )  
j
F
Figure 1. Forward Current vs. Forward Voltage  
Figure 3. Max. Reverse Power Dissipation vs.  
Junction Temperature  
1.4  
1000  
V =V  
half sinewave  
R
R RM  
V
= V  
RRM  
R
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
100  
10  
1
R
=60K/W  
l=10mm  
thJA  
R
=110K/W  
thJA  
PCB: d=25mm  
0
20 40 60 80 100 120 140 160 180  
– Ambient Temperature ( °C )  
25  
50  
75  
100  
125  
150  
175  
15952  
T
amb  
15954  
T – Junction Temperature ( °C )  
j
Figure 2. Average Forward Current vs.  
Ambient Temperature  
Figure 4. Reverse Current vs. Junction Temperature  
Dimensions in mm  
95 10524  
Standard Glass Case  
DOT 30 B  
Weight max. 0.5g  
3 max.  
technical drawings  
according to DIN  
specifications  
Cathode Identification  
0.82 max.  
26 min.  
26 min.  
4.2 max.  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 86056  
Rev. 2, 24-Jun-98  
2 (3)  
S414D  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 86056  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
3 (3)  

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