S505TYRW [VISHAY]
RF/Microwave Amplifier, 1 Func, MOS;
| 型号： | S505TYRW |
| 厂家： | 
VISHAY |
| 描述： | RF/Microwave Amplifier, 1 Func, MOS |
| 文件： | 总6页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S505TY/S505TYR/S505TYRW
Vishay Semiconductors
®
MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage
2
1
Comments
MOSMIC - MOS Monolithic Integrated Circuit
SOT-143
3
4
Features
2
1
• Easy Gate 1 switch-off with PNP switching
transistors inside PLL
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 31 mS
• Partly internal self biasing-network on chip
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
e3
SOT-143R
SOT-343R
4
3
2
1
• Main AGC control range from 3 V to 0.5 V
• Supply voltage 5 V (3 V to 7 V)
4
3
19216
Electrostatic sensitive device.
Observe precautions for handling.
• SMD package, standard and reverse pinning
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Typ: S505TY
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: S505TYR
Case: SOT-143R Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: S505TYRW
Applications
Low noise gain controlled VHF and UHF input stages,
such as in digital and analog TV tuners.
Typical Application
RFC
C block
V
(V
)
DD DS
AGC
D
G2
G1
C block
RG1
RF out
RF in
C block
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
S
V
GG
(V
RG1
)
13650
Parts Table
Part
Marking
Package
S505TY
Y05
SOT-143
S505TYR
S505TYRW
Y5R
WY5
SOT-143R
SOT-343R
Document Number 85096
Rev. 1.2, 02-Mar-05
www.vishay.com
1
S505TY/S505TYR/S505TYRW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VDS
Value
8
Unit
V
Drain - source voltage
Drain current
ID
25
10
mA
mA
Gate 1/Gate 2 - source peak
current
IG1/G2SM
Gate 1 - source voltage
+ VG1SM
- VG1SM
VG2SM
Ptot
6
V
V
1.5
Gate 2 - source voltage
Total power dissipation
Channel temperature
6
200
V
Tamb ≤ 60 °C
mW
°C
°C
TCh
150
Storage temperature range
Tstg
- 55 to + 150
Maximum Thermal Resistance
Parameter
Test condition
Symbol
RthChA
Value
450
Unit
K/W
1)
Channel ambient
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
V(BR)DSS
Min
12
Typ.
Max
Unit
V
Drain - source breakdown
voltage
ID = 10 μA, VG1S = VG2S = 0
Gate 1 - source breakdown
voltage
+IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS
7
7
10
10
V
V
Gate 2 - source breakdown
voltage
IG2S = 10 mA, VG1S = VDS = 0
V(BR)G2SS
Gate 1 - source leakage current +VG1S = 5 V, VG2S = VDS = 0
+ IG1SS
IG2SS
IDSO
20
20
17
nA
nA
Gate 2 - source leakage current
V
G2S = 5 V, VG1S = VDS = 0
DS = VRG1 = 5 V, VG2S = 4 V,
RG1 = 68 kΩ
Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 μA VG1S(OFF)
Gate 2 - source cut-off voltage DS = VRG1 = 5 V, RG1 = 68 kΩ, VG2S(OFF)
ID = 20 μA
Drain - source operating current
V
8
12
mA
0.3
0.3
1.0
1.2
V
V
V
1.0
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
V
DS = VRG1 = 5 V, VG2S = 4 V, RG1 = 68 kΩ, ID = IDSO, f = 1 MHz
Parameter Test condition
Symbol
|y21s
Min
27
Typ.
31
Max
35
Unit
mS
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
|
Cissg1
Crss
1.9
20
2.3
pF
fF
Coss
0.9
pF
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2
Document Number 85096
Rev. 1.2, 02-Mar-05
S505TY/S505TYR/S505TYRW
Vishay Semiconductors
Parameter
Power gain
Test condition
Symbol
Gps
Min
Typ.
33
Max
Unit
dB
GS = 2 mS, BS = BSopt
GL = 0.5 mS, BL = BLopt
f = 200 MHz
,
,
G
S = 2 mS, BS = BSopt
,
Gps
30
25
dB
dB
GL = 1 mS, BL = BLopt
f = 400 MHz
,
GS = 3.3 mS, BS = BSopt
,
Gps
GL = 1 mS, BL = BLopt
f = 800 MHz
,
AGC range
VDS = 5 V, VG2S = 0.5 to 4 V,
f = 800 MHz
Gps
F
40
50
6.0
1.0
dB
dB
dB
Noise figure
GS = GL = 20 mS, BS = BL = 0,
8.0
1.5
f = 50 MHz
GS = 2 mS, GL = 1 mS,
BS = BSopt, f = 400 MHz
F
GS = 3.3 mS, GL = 1 mS,
F
1.3
2.0
dB
BS = BSopt, f = 800 MHz
Cross modulation
Input level for k = 1 % @ 0 dB
AGC fw = 50 MHz,
Xmod
90
dBμV
funw = 60 MHz
Input level for k = 1 % @ 40 dB
AGC fw = 50 MHz,
Xmod
100
105
dBμV
funw = 60 MHz
Package Dimensions in mm
96 12239
Document Number 85096
Rev. 1.2, 02-Mar-05
www.vishay.com
3
S505TY/S505TYR/S505TYRW
Vishay Semiconductors
Package Dimensions in mm
1.1 (0.043)
0.9 (0.035)
0.50(0.020)
0.9 (0.035)
0.35 (0.014)
0.15 (0.006)
0.08 (0.003)
0.75 (0.029)
3.0 (0.117)
2.8 (0.109)
0...0.1 (0...0.004)
Mounting Pad Layout
1.8 (0.070)
1.6 (0.062)
0.65 (0.025)
1.17 (0.046)
ISO Method E
2.0 (0.078)
1.8 (0.070)
96 12240
Package Dimensions in mm
96 12238
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4
Document Number 85096
Rev. 1.2, 02-Mar-05
S505TY/S505TYR/S505TYRW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85096
Rev. 1.2, 02-Mar-05
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5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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