S860T [VISHAY]

BIPMIC - Cascadable Silicon Bipolar Amplifier; BIPMIC - 级联硅双极放大器
S860T
型号: S860T
厂家: VISHAY    VISHAY
描述:

BIPMIC - Cascadable Silicon Bipolar Amplifier
BIPMIC - 级联硅双极放大器

放大器 集成电源管理电路
文件: 总5页 (文件大小:70K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S860T  
Vishay Telefunken  
BIPMIC – Cascadable Silicon Bipolar Amplifier  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
General purpose for narrow and broad band IF and RF plifiers with minimal external circuitry, thus providing a  
amplifiers in commercial and industrial applications simple, cost effective way to achieve low level amplifi-  
with low power consumption. This allows to build am- cation, for example in cordless phones.  
Features  
Broadband amplification  
Low operating voltage (3 V)  
Low operating current  
High gain (8.5 dB @900 MHz and 50  
)
Low cost surface mount plastic package  
Few external components  
2
1
13 579  
94 9279  
3
4
S860T Marking: 860  
Plastic case (SOT 143)  
1 = RF-output, 2 = Ground,  
3 = RF-input, 4 = Ground  
Typical biasing configuration  
Absolute Maximum Ratings  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Device current  
RF input power  
Total power dissipation  
Junction temperature  
Storage temperature range  
Test Conditions  
Symbol  
Value  
4
0
8
Unit  
mA  
dBm  
mW  
C
I
bias  
P
in  
T
amb  
146 C  
P
tot  
T
150  
–65 to +150  
j
T
stg  
C
Maximum Thermal Resistance  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
R
thJA  
Value  
450  
Unit  
K/W  
3
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm  
plated with 35 m Cu  
Document Number 85055  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  
S860T  
Vishay Telefunken  
Electrical AC Characteristics  
I
= 3 mA , Z = 50 , T  
= 25 C, unless otherwise specified  
bias  
0
amb  
Parameter  
Power gain  
Test Conditions  
f = 900 MHz  
f = 1.9 GHz  
Symbol Min  
Typ Max Unit  
G
p
G
p
6
5
8.5  
7.5  
2.5  
5.5  
6.5  
40  
dB  
dB  
GHz  
dB  
dB  
dB  
dB  
V
3 dB bandwidth  
Noise figure  
f
3dB  
F
F
f = 900 MHz  
f = 1.9 GHz  
7 mV input voltage, f = 900 MHz  
7 mV input voltage, f = 1.9 GHz  
Intermodulation distortion  
Device voltage  
IM  
IM  
3
3
45  
1.8  
V
d
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85055  
Rev. 3, 20-Jan-99  
2 (5)  
S860T  
Vishay Telefunken  
Common Emitter S–Parameters  
V
CC  
= 2.4 V , R  
= 200 , Z0 = 50  
T
amb  
= 25 C, unless otherwise specified  
bias  
S11  
S21  
S12  
S22  
LOG  
MAG  
dB  
–2.28  
LOG  
MAG  
dB  
LOG  
MAG  
dB  
LOG  
MAG  
dB  
–2.06  
f/MHz  
ANG  
deg  
ANG  
deg  
ANG  
deg  
19.2  
ANG  
deg  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
2100  
2200  
2300  
2400  
2400  
2600  
2700  
2800  
2900  
3000  
–2.7  
–5.4  
–8.1  
7.78  
174.9  
–20.37  
–20.00  
–19.49  
–19.28  
–18.93  
–18.39  
–17.63  
–16.93  
–17.21  
–16.42  
–15.89  
–15.36  
–14.63  
–14.18  
–13.88  
–13.64  
–13.36  
–13.03  
–12.66  
–12.35  
–12.14  
–11.98  
–11.79  
–11.35  
–10.86  
–10.64  
–10.54  
–10.48  
–10.42  
–10.38  
–11.3  
–2.34  
–2.40  
–2.46  
–2.57  
–2.66  
–2.71  
–2.75  
–2.85  
–2.93  
–3.05  
–3.18  
–3.28  
–3.37  
–3.54  
–3.63  
–3.75  
–3.90  
–4.10  
–4.24  
–4.35  
–4.54  
–4.81  
–4.75  
–5.02  
–5.61  
–6.05  
–6.50  
–7.02  
–7.45  
7.72  
7.69  
7.64  
7.63  
7.59  
7.49  
7.41  
7.38  
7.33  
7.24  
7.10  
7.08  
7.03  
6.87  
6.91  
6.82  
6.76  
6.78  
6.73  
6.65  
6.64  
6.46  
6.61  
6.74  
6.61  
6.54  
6.56  
6.33  
6.31  
170.2  
165.6  
160.4  
155.7  
150.7  
146.6  
141.9  
137.2  
132.9  
128.6  
124.4  
120.1  
116.4  
112.1  
108.2  
104.5  
100.8  
96.5  
93.0  
89.1  
85.4  
81.8  
78.5  
74.4  
69.5  
65.3  
15.3  
16.1  
18.9  
22.0  
25.4  
27.0  
27.1  
26.0  
27.6  
29.2  
29.2  
30.4  
27.5  
26.0  
24.4  
23.4  
23.0  
22.3  
20.6  
19.0  
17.7  
17.1  
16.6  
13.3  
10.7  
8.6  
–2.54  
–2.86  
–2.88  
–2.84  
–2.84  
–3.01  
–3.40  
–3.45  
–3.62  
–3.55  
–3.67  
–3.53  
–4.22  
–4.62  
–5.03  
–5.24  
–5.26  
–5.40  
–5.75  
–6.09  
–6.34  
–6.40  
–6.31  
–6.69  
–7.13  
–7.60  
–8.10  
–8.60  
–9.11  
–10.6  
–12.4  
–14.5  
–17.6  
–21.4  
–25.7  
–29.7  
–26.4  
–32.3  
–36.3  
–39.9  
–45.5  
–49.1  
–51.5  
–53.6  
–55.4  
–58.0  
–61.9  
–65.3  
–67.7  
–69.9  
–72.0  
–76.7  
–82.9  
–87.0  
–89.9  
–92.8  
–96.0  
–99.0  
–10.3  
–13.0  
–15.5  
–17.7  
–20.2  
–22.5  
–24.9  
–27.1  
–29.7  
–32.6  
–35.0  
–37.4  
–40.4  
–43.1  
–46.1  
–49.0  
–52.2  
–55.7  
–59.1  
–62.2  
–65.7  
–72.4  
–75.7  
–80.4  
–84.4  
–89.6  
–94.6  
61.8  
57.3  
53.0  
6.3  
3.9  
1.8  
Document Number 85055  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
3 (5)  
S860T  
Vishay Telefunken  
Dimensions of S860T in mm  
96 12240  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85055  
Rev. 3, 20-Jan-99  
4 (5)  
S860T  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as their  
impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85055  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
5 (5)  

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