S886TR [VISHAY]
MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage; MOSMIC的电视调谐器预安排与12 V电源电压
| 型号： | S886TR |
| 厂家： | 
VISHAY |
| 描述： | MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage |
| 文件： | 总8页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S886T/S886TR
Vishay Telefunken
MOSMIC for TV–Tuner Prestage with 12 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
RFC
Applications
C block
V
DD
Low noise gain controlled input stages in UHF-and
VHF- tuner with 12 V supply voltage.
AGC
RF in
D
G2
G1
RF out
C block
S
C block
94 9296
Features
Integrated gate protection diodes
Low noise figure
Improved cross modulation at gain reduction
High AGC-range
High gain
SMD package
Biasing network on chip
2
1
1
2
13 579
94 9279
94 9278
95 10831
4
3
3
4
S886T Marking: 982
S886TR Marking: 82R
Plastic case (SOT 143)
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Test Conditions
Symbol
Value
16
30
10
7.5
Unit
V
mA
mA
V
V
DS
Drain current
I
D
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
±I
G1/G2SM
±V
G1/G2SM
T
≤ 60 C
P
tot
200
150
mW
C
amb
T
Ch
Storage temperature range
T
stg
–55 to +150
C
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
3
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35 m Cu
Document Number 85057
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (8)
S886T/S886TR
Vishay Telefunken
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min Typ Max Unit
Gate 1 - source
breakdown voltage
Gate 2 - source
±I
±I
= 10 mA, V
= V = 0
±V
8
12
V
G1S
G2S
DS
(BR)G1SS
±V
(BR)G2SS
= 10 mA, V
= V = 0
8
12
V
G2S
G1S
DS
breakdown voltage
Gate 1 - source
leakage current
+V
–V
±V
= 6 V, V
= 6 V, V
= 6 V, V
= V = 0
+I
G1SS
–I
G1SS
±I
G2SS
60
120
20
A
A
nA
G1S
G1S
G2S
G2S
DS
= V = 0
G2S
DS
Gate 2 - source
leakage current
= V = 0
G1S
DS
Drain current
Self-biased
V
V
= 12 V, V
= 12 V, V
= 0, V
= nc, V
= 6 V
I
I
50
8
500
16 mA
A
DS
G1S
G2S
DSS
= 6 V
12
DS
G1S
G2S
DSP
operating current
Gate 2 - source
cut-off voltage
V
DS
= 12 V, V
= nc, I = 200 A
V
G2S(OFF)
1.0
V
G1S
D
Electrical AC Characteristics
V
DS
= 12 V, V
= 6 V, f = 1 MHz , T
amb
= 25 C, unless otherwise specified
G2S
Parameter
Test Conditions
Symbol Min Typ Max Unit
25 30 35 mS
2.3 2.7 pF
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
y
21s
C
issg1
C
20
0.9
27
fF
rss
C
oss
pF
dB
dB
dB
dB
dB
G = 2 mS, G = 0.5 mS, f = 200 MHz
G
G
S
L
ps
G = 3,3 mS, G = 1 mS, f = 800 MHz
17.5 22
S
L
ps
AGC range
Noise figure
V
= 12 V, V
= 1 to 6 V, f = 800 MHz
G
ps
F
F
45
1
DS
G2S
G = 2 mS, G = 0.5 mS, f = 200 MHz
S
L
G = 3,3 mS, G = 1 mS, f = 800 MHz
1.3
S
L
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
< 0.7 V is feasible.
G1S
Using open collector switching transistor (inside of PLL), insert 10 k collector resistor.
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85057
Rev. 3, 20-Jan-99
2 (8)
S886T/S886TR
Vishay Telefunken
Common Source S–Parameters
V
DS
= 12 V , V
= 6 V , Z0 = 50
T
amb
= 25 C, unless otherwise specified
G2S
S11
S21
S12
S22
LOG
MAG
dB
–0.02
LOG
MAG
dB
LOG
MAG
dB
LOG
MAG
dB
–0.35
f/MHz
ANG
deg
ANG
deg
ANG
deg
87.6
ANG
deg
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
–4.8
–9.3
10.29
174.4
–61.79
–55.74
–52.32
–50.05
–48.45
–47.20
–46.23
–45.57
–45.19
–44.92
–44.76
–44.58
–44.57
–44.75
–45.03
–45.27
–45.52
–45.41
–44.79
–44.21
–43.95
–43.64
–42.73
–41.82
–40.68
–39.80
–1.9
–3.7
–5.5
–7.3
–9.1
–0.05
–0.14
–0.23
–0.35
–0.48
–0.63
–0.80
–0.95
–1.15
–1.31
–1.46
–1.62
–1.81
–1.95
–2.11
–2.26
–2.37
–2.49
–2.62
–2.76
–2.90
–2.98
–3.07
–3.14
–3.24
10.20
10.10
9.97
9.78
9.64
9.40
9.24
8.95
8.74
8.54
8.31
8.07
7.85
7.67
7.47
7.28
7.08
6.94
6.71
6.62
6.44
6.34
6.17
6.11
6.00
168.1
161.6
155.4
148.7
143.2
137.5
132.0
126.1
121.1
116.4
111.2
106.6
101.9
97.3
92.7
87.8
83.3
79.3
74.6
70.9
66.0
62.2
84.8
81.5
79.2
76.3
74.5
72.5
71.2
69.4
68.7
69.0
70.8
72.3
73.4
76.3
81.0
86.6
94.9
103.7
107.4
113.3
120.8
128.9
135.7
142.1
146.1
–0.38
–0.40
–0.43
–0.45
–0.47
–0.51
–0.55
–0.60
–0.63
–0.67
–0.69
–0.72
–0.75
–0.77
–0.79
–0.81
–0.83
–0.85
–0.87
–0.89
–0.90
–0.87
–0.85
–0.80
–0.76
–13.8
–18.2
–22.5
–26.6
–30.8
–34.7
–38.4
–42.2
–45.7
–49.3
––52.4
–56.0
–58.9
–62.0
–65.3
–68.2
–71.5
–74.5
–77.5
–80.2
–83.2
–86.0
–88.8
–91.6
–10.5
–12.2
–13.8
–15.3
–17.1
–18.4
–19.9
–21.6
–22.7
–24.6
–25.8
–27.5
–29.1
–31.0
–32.3
–33.9
–35.3
–37.2
–38.8
–40.4
–42.4
57.3
53.6
48.8
Document Number 85057
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (8)
S886T/S886TR
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
250
200
150
40
30
20
10
0
100
50
0
V
=12V
DS
f=200MHz
150
6
0
25
50
75
100
125
0
1
2
3
4 5
95 10777
T
amb
– Ambient Temperature ( °C )
95 10780
V
– Gate 2 Source Voltage ( V )
G2S
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Forward Transadmittance vs.
Gate 2 Source Voltage
20
16
12
4
V
=12V
DS
f=200MHz
3
2
1
0
V
=6V
G2S
5V
8
4
0
4V
3V
2V
1V
12
0
1
2
3
4
5
6
7
0
2
4
6
8
10
15968
V
– Gate 2 Source Voltage ( V )
G2S
95 10778
V
DS
– Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs.
Gate 2 Source Voltage
20
2
V
=6V
G2S
V
=12V
DS
f=200MHz
16
12
1.5
1
0.5
0
8
4
0
6
14
0
1
2
3
4
5
6
8
10
12
95 10779
V
– Gate 2 Source Voltage ( V )
95 11147
V
DS
– Drain Source Voltage ( V )
G2S
Figure 3. Drain Current vs. Gate 2 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85057
Rev. 3, 20-Jan-99
4 (8)
S886T/S886TR
Vishay Telefunken
20
0
80
60
40
20
0
–20
–40
–60
V
=12V
DS
V
=12V
DS
f=800MHz
f=800MHz
6
0
1
2
3
4
5
2
3
4
5 6
95 10782
V
– Gate 2 Source Voltage ( V )
95 11148
V
– Gate 2 Source Voltage ( V )
G2S
G2S
Figure 7. Transducer Gain vs. Gate 2 Source Voltage
Figure 8. Cross Modulation vs. Gate 2 Source Voltage
Document Number 85057
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
5 (8)
S886T/S886TR
Vishay Telefunken
VDS = 12 V, VG2S = 6 V , Z0 = 50
S11
S12
j
90°
120°
60°
j0.5
j2
150°
30°
j0.2
j5
1050
550
50
1300MHz
0
0.2
0.5
1
2
5
180°
0.008
0.016
0°
50
300
–j0.2
–j5
1300MHz
–j
800
–150°
–30°
–j0.5
–j2
–120°
–60°
12 936
–90°
12 937
Figure 9. Input reflection coefficient
Figure 11. Reverse transmission coefficient
S21
S22
j
90°
60°
550
800
j0.5
j2
300
50
1050
30°
j0.2
j5
1300MHz
180°
1.0
2.0
0°
0
0.2
0.5
1
2
5
50
300
800
–j0.2
–j5
1300MHz
–150°
–30°
–j0.5
–j2
–120°
–60°
12 939
–j
–90°
12 938
Figure 10. Forward transmission coefficient
Figure 12. Output reflection coefficient
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85057
Rev. 3, 20-Jan-99
6 (8)
S886T/S886TR
Vishay Telefunken
Dimensions of S886T in mm
96 12240
Dimensions of S886TR in mm
96 12239
Document Number 85057
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
7 (8)
S886T/S886TR
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85057
Rev. 3, 20-Jan-99
8 (8)
相关型号：
S886TR-GS08
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
VISHAY
S886TR-GS18
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
VISHAY
S888T
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
TEMIC
S888T-GS18
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
TEMIC
©2020 ICPDF网 联系我们和版权申明