SB1H90-23 [VISHAY]
Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;
| 型号： | SB1H90-23 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB1H90 and SB1H100
Vishay Semiconductor
New Product
High Voltage Schottky Rectifiers
Reverse Voltage 90 to 100V
Forward Current 1.0A
DO-204AL (DO-41)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low power loss, high efficiency
• For use in low voltage high frequency inverters,
free-wheeling, and polarity protection applications
1.0 (25.4)
MIN.
• Guardring for overvoltage protection
0.107 (2.7)
0.080 (2.0)
DIA.
Mechanical Data
Case: JEDEC DO-204AL molded plastic body
0.205 (5.2)
0.160 (4.1)
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity: Color band denotes cathode end
Mounting Position: Any
Dimensions in inches
and (millimeters)
1.0 (25.4)
MIN.
Weight: 0.012oz., 0.34g
Packaging Codes-Options:
0.034 (0.86)
1-5K per Bulk box, 50K/carton
0.028 (0.71)
DIA.
4-5.5K per 13” reel (52.4mm Tape), 22K/carton
23-3K per Ammo mag. (52.4mm Tape), 27K/carton
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbols
VRRM
VRMS
VDC
SB1H90
SB1H100
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
90
100
V
V
V
A
63
70
Maximum DC blocking voltage
Maximum average forward rectified current
90
100
IF(AV)
1.0
50
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
IRRM
A
Peak repetitive reverse surge current at tp = 2.0µs, 1KHZ
1.0
A
RθJA
RθJL
57
15
Maximum thermal resistance (2)
°C/W
Maximum operating junction temperature
Storage temperature range
TJ
175
°C
°C
TSTG
–55 to +175
Electrical Characteristics (TA = 25°C unless otherwise noted)
IF = 1.0A, TJ = 25°C
0.77
0.62
0.86
0.70
Maximum instantaneous
forward voltage at: (1)
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 25°C
IF = 2.0A, TJ = 125°C
VF
V
Maximum DC reverse current
at rated DC blocking voltage(1)
TJ = 25°C
TJ = 125°C
1.0
0.5
µA
mA
IR
Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle
(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
Document Number 88716
25-Jun-02
www.vishay.com
1
SB1H90 and SB1H100
Vishay Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Fig. 2 – Typical Instantaneous
Forward Characteristics
Derating Curve
1.2
100
10
1
TJ = 175¡C
TJ = 150¡C
1
0.8
0.6
0.4
0.2
0
TJ = 125¡C
TJ = 100¡C
0.1
TJ = 25¡C
0.01
200
0
25
50
75
100
125
150
175
0
0.2
0.4 0.6 0.8 1.0 1.2
1.4 1.6 1.8
Case Temperature (¡C)
Instantaneous Forward Voltage (V)
Fig. 3 – Typical Reverse
Characteristics
Fig. 4 – Typical Junction Capacitance
10000
1000
100
10000
1000
100
TJ = 150°C
TJ = 125°C
10
TJ = 100°C
1
0.1
TJ = 25°C
80
0.01
10
0.1
20
40
60
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 5 – Typical Transient
Thermal Impedance
100
10
1
0.1
0.01
0.1
1
10
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88716
25-Jun-02
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