SB2H100-E3 [VISHAY]

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode;
SB2H100-E3
型号: SB2H100-E3
厂家: VISHAY    VISHAY
描述:

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode

功效 瞄准线 二极管
文件: 总4页 (文件大小:247K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SB2H90 & SB2H100  
New Product  
Vishay General Semiconductor  
High-Voltage Schottky Rectifier  
High Barrier Technology for improved  
high temperature performance  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
VF  
2.0 A  
90 V, 100 V  
75 A  
0.65 V  
IR  
10 µA  
Tj max.  
175 °C  
DO-204AC (DO-15)  
Features  
Typical Applications  
• Guardring for overvoltage protection  
• Low power losses and high efficiency  
• Low forward voltage drop  
For use in middle voltage high frequency inverters,  
free wheeling, dc-to-dc converters and polarity pro-  
tection applications.  
• Low leakage current  
Mechanical Data  
Case: DO-204AC (DO-15)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
• High forward surge capability  
• High frequency operation  
• Meets MSL level 1, per J-STD-020C  
E3 suffix for commercial grade  
Polarity: Color band denotes the cathode end  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
VRRM  
SB2H90  
90  
SB2H100  
100  
Unit  
V
Maximum repetitive peak reverse voltage  
Working Peak Reverse Voltage  
VRWM  
90  
90  
100  
100  
V
V
A
A
VDC  
Maximum DC blocking voltage  
Maximum average forward rectified current at TA = 25 °C  
IF(AV)  
2.0  
75  
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load  
IFSM  
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz  
IRRM  
1.0  
A
Critical rate of rise of reverse voltage  
Storage temperature range  
dv/dt  
TSTG  
10000  
V/µs  
°C  
- 55 to + 175  
175  
Maximum operating junction temperature  
TJ  
°C  
Document Number 88718  
23-Dec-05  
www.vishay.com  
1
SB2H90 & SB2H100  
Vishay Semiconductors  
Electrical Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Test condition  
Symbols  
VF  
SB2H90  
SB2H100  
Unit  
V
Maximum instantaneous forward voltage(1)  
IF = 2.0 A,  
IF = 2.0 A,  
TJ = 25 °C  
0.79  
0.65  
TJ = 125 °C  
Maximum DC reverse current at rated DC  
blocking voltage(1)  
TJ = 25 °C  
IR  
10  
4.0  
µA  
mA  
TJ = 125 °C  
Notes:  
(1) Pulse test: 300 ms pulse width, 1 % duty cycle  
Thermal Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
RθJA  
RθJL  
SB2H90  
SB2H100  
Unit  
Typical thermal resistance (1)  
45  
14  
°C/W  
Notes:  
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise specified)  
4.0  
100  
10  
1
3.0  
2.0  
TJ = 175°C  
TJ = 100°C  
TJ = 150°C  
TJ = 125°C  
1.0  
0
0.1  
TJ = 25°C  
0.6  
0.01  
0
200  
0
25  
50  
75  
100 125  
150  
175  
0.2  
0.4  
0.8  
1.0  
1.2  
1.4  
Instantaneous Forward Voltage (V)  
Ambient Temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Typical Instantaneous Forward Characteristics  
www.vishay.com  
Document Number 88718  
23-Dec-05  
2
SB2H90 & SB2H100  
Vishay Semiconductors  
10000  
1000  
100  
10  
100  
TJ = 150°C  
TJ = 125°C  
TJ = 100°C  
10  
1
0.1  
TJ = 25°C  
0.01  
1
0.01  
20  
40  
60  
80  
100  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (sec.)  
Figure 3. Typical Reverse Characteristics  
Figure 5. Typical Transient Thermal Impedance  
10000  
1000  
100  
10  
0.1  
1
10  
100  
Reverse Voltage (V)  
Figure 4. Typical Junction Capacitance  
Package outline dimensions in inches (millimeters)  
DO-204AC (DO-15)  
0.034 (0.86)  
0.028 (0.71)  
Dia.  
1.0 (25.4)  
min.  
0.300 (7.6)  
0.230 (5.8)  
0.140 (3.6)  
0.104 (2.6)  
Dia.  
1.0 (25.4)  
min.  
Document Number 88718  
23-Dec-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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