SB2H90 [VISHAY]
High Voltage Schottky Rectifiers; 高压肖特基整流器
| 型号： | SB2H90 |
| 厂家： | 
VISHAY |
| 描述： | High Voltage Schottky Rectifiers |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB2H90 and SB2H100
New Product
Vishay Semiconductors
formerly General Semiconductor
High Voltage Schottky Rectifiers
Reverse Voltage 90 to 100V
Forward Current 2.0A
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low power loss, high efficiency
• For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
1.0 (25.4)
min.
• Guardring for overvoltage protection
Mechanical Data
Case: JEDEC DO-204AC molded plastic over a
passivated junction
0.300 (7.6)
0.230 (5.8)
Terminals: Solder Plated axial leads, solderable per MIL-
STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds 0.375” (9.5mm) lead length,
5 lbs. (2.3kg) tension
0.140 (3.6)
0.104 (2.6)
Dia.
Polarity: Color band denotes cathode end
Mounting Position: Any
1.0 (25.4)
min.
Dimensions in inches
and (millimeters)
Weight: 0.015 oz., 0.4 g
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
VRRM
VRWM
VDC
SB2H90
SB2H100
Unit
V
Maximum repetitive peak reverse voltage
Working Peak Reverse Voltage
Maximum DC blocking voltage
90
100
90
100
V
90
100
V
Maximum average forward rectified current at TA = 25°C
IF(AV)
2.0
75
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
A
Peak repetitive reverse surge current at tp = 2.0µs, 1KHZ
IRRM
dv/dt
1.0
A
Critical rate of rise of reverse voltage
10,000
V/µs
RθJA
RθJL
45
14
Typical thermal resistance (2)
°C/W
Storage temperature range
TSTG
TJ
–55 to +175
+175
°C
°C
Maximum operating junction temperature
Electrical Characteristics(TA = 25°C unless otherwise noted)
IF = 2A, TJ = 25°C
0.79
0.65
Max. instantaneous forward voltage(1)
VF
V
IF = 2A, TJ = 125°C
Maximum DC reverse current
at rated DC blocking voltage
TJ = 25°C
TJ = 125°C
10
4
µA
mA
IR
Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle
(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
Document Number 88718
25-Jun-02
www.vishay.com
1
SB2H90 and SB2H100
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Fig. 2 – Typical Instantaneous
Forward Characteristics
Derating Curve
4.0
100
10
1
3.0
2.0
TJ = 175°C
TJ = 100°C
TJ = 150°C
TJ = 125°C
1.0
0
0.1
TJ = 25°C
0.01
200
0
25
50
75
100 125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 3 – Typical Reverse
Characteristics
Fig. 4 – Typical Junction Capacitance
10000
1000
100
10000
1000
100
TJ = 150°C
TJ = 125°C
TJ = 100°C
10
1
0.1
TJ = 25°C
0.01
10
0.1
20
40
60
80
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 5 - Typical Transient
Thermal Impedance
100
10
1
0.01
0.1
1
10
100
t — Pulse Duration (sec.)
www.vishay.com
2
Document Number 88718
25-Jun-02
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