SBL10L30-E3/45 [VISHAY]
Low VF Schottky Barrier Rectifier; 低VF肖特基整流器型号: | SBL10L30-E3/45 |
厂家: | VISHAY |
描述: | Low VF Schottky Barrier Rectifier |
文件: | 总5页 (文件大小:142K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SBL10L30, SBLF10L30, SBLB10L30
Vishay General Semiconductor
Low V Schottky Barrier Rectifier
F
FEATURES
TO-220AC
ITO-220AC
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
2
2
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
1
1
SBL10L30
PIN 1
SBLF10L30
PIN 1
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
CASE
PIN 2
PIN 2
TO-263AB
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
K
TYPICAL APPLICATIONS
2
For use in low voltage, high frequency rectifier
of switching mode power supplies, OR-ing diode,
freewheeling diodes, dc-to-dc converters and polarity
protection application.
1
SBLB10L30
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
10 A
30 V
200 A
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
VF
0.43 V
150 °C
TJ max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
VALUE
30
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
V
V
V
A
21
Maximum DC blocking voltage
30
Maximum average forward rectified current at TC = 140 °C
IF(AV)
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dV/dt
1.0
10 000
A
V/µs
°C
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
TJ, TSTG
VAC
- 65 to + 150
1500
V
Document Number: 88724
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
SBL10L30, SBLF10L30, SBLB10L30
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
IF = 10 A
IF = 10 A
TJ = 25 °C
TJ = 125 °C
0.52
0.43
Maximum instantaneous forward voltage (1)
VF
V
Maximum instantaneous reverse current at DC
blocking voltage (1)
TJ = 25 °C
TJ = 125 °C
1.0
100
IR
mA
Note:
(1) Pulse test: 300 µs pulse width, 2 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
SBL
SBLF
SBLB
4.3
UNIT
Typical thermal resistance from junction to case per leg
RθJC
4.3
4.8
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
SBL10L30-E3/45
1.80
1.94
1.33
1.33
1.80
1.94
1.33
1.33
45
45
45
81
45
45
45
81
SBLF10L30-E3/45
SBLB10L30-E3/45
SBLB10L30-E3/81
SBL10L30HE3/45 (1)
SBLF10L30HE3/45 (1)
SBLB10L30HE3/45 (1)
SBLB10L30HE3/81 (1)
50/tube
Tube
50/tube
Tube
800/reel
50/tube
Tape and reel
Tube
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
12.5
100
Resistive or Inductive Load
10
7.5
5
10
TJ = 150 °C
1
T
J = 125 °C
TJ = 100 °C
TJ = 25 °C
0.1
2.5
0
0.01
100
0
0.2
0.4
0.6
0.8
1.0
50
150
Instantaneous Forward Voltage (V)
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Typical Instantaneous Forward Characteristics
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88724
Revision: 07-May-08
SBL10L30, SBLF10L30, SBLB10L30
Vishay General Semiconductor
1000
100
10
100
10
1
TJ = 150 °C
T
J = 125 °C
1
TJ = 100 °C
0.1
0.01
0.001
TJ = 75 °C
0.1
0.01
20
40
60
80
100
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 3. Typical Reverse Characteristics
Figure 5. Typical Transient Thermal Impedance
10 000
1000
100
10
100
0.1
1
10
Reverse Voltage (V)
Figure 4. Typical Junction Capacitance
Document Number: 88724
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
SBL10L30, SBLF10L30, SBLB10L30
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
TO-220AC
0.404 (10.26)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.384 (9.75)
0.415 (10.54) MAX.
0.076 (1.93) REF.
0.154 (3.91) DIA.
0.185 (4.70)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74) DIA.
0.175 (4.44)
0.055 (1.39)
7° REF.
0.076 (1.93) REF.
0.113 (2.87)
0.045 (1.14)
0.103 (2.62)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
45° REF.
0.122 (3.08) DIA.
0.145 (3.68)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.135 (3.43)
7° REF.
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
PIN
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.350 (8.89)
0.330 (8.38)
0.625 (15.87)
1
2
PIN
1.148 (29.16)
1.118 (28.40)
1
2
7° REF.
0.191 (4.85)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.057 (1.45)
0.045 (1.14)
PIN 1
PIN 2
0.045 (1.14)
0.530 (13.46)
CASE
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.037 (0.94)
0.025 (0.64)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
0.015 (0.38)
0.028 (0.71)
0.020 (0.51)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.15 (3.81) MIN.
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88724
Revision: 07-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
相关型号:
SBL10L30-HE3/45
DIODE 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
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