SBL25L30CT-E3/45 [VISHAY]
DIODE 12.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode;型号: | SBL25L30CT-E3/45 |
厂家: | VISHAY |
描述: | DIODE 12.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode 局域网 功效 瞄准线 二极管 |
文件: | 总5页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
Vishay General Semiconductor
Dual Low VF Common Cathode Schottky Rectifier
FEATURES
ITO-220AB
TO-220AB
• Power pack
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D2PAK (TO-263AB) package)
3
3
2
2
1
1
SBL25L30CT
SBLF25L30CT
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
PIN 1
PIN 2
CASE
PIN 1
PIN 2
PIN 3
PIN 3
• AEC-Q101 qualified
D2PAK (TO-263AB)
(for ITO-220AB and D2PAK (TO-263AB) package)
K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
TYPICAL APPLICATIONS
1
For use in low voltage, high frequency inverters, switching
mode power supplies, freewheeling diodes, OR-ing diodes,
DC/DC converters, and polarity protection application.
SBLB25L30CT
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
PRIMARY CHARACTERISTICS
IF(AV)
2 x 12.5 A
VRRM
30 V
180 A
0.39 V
150 °C
IFSM
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
VF
TJ max.
Package
Diode variations
TO-220AB, ITO-220AB, D2PAK (TO-263AB)
meets JESD 201 class 2 whisker test
Common cathode
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL25L30CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
30
25
V
total device
Maximum average forward rectified current
at TC = 95 °C
per diode
IF(AV)
IFSM
12.5
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
180
Operating junction and storage temperature range
TJ, TSTG
VAC
-55 to +150
1500
°C
V
Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min
Revision: 20-Nov-17
Document Number: 88731
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
0.39
0.49
0.90
50
UNIT
TJ = 125 °C
(1)
Maximum instantaneous forward voltage
VF
12.5 A
V
TJ = 25 °C
TJ = 25 °C
TJ = 100 °C
TJ = 125 °C
Maximum instantaneous reverse current at DC blocking
voltage per diode
(2)
IR
Rated VR
mA
100
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL
SBLF
SBLB
UNIT
Typical thermal resistance from junction to case per
diode
RJC
1.5
4.0
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
SBL25L30CT-E3/45
1.85
1.99
1.35
1.35
1.99
1.35
1.35
45
45
45
81
45
P
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
Tube
Tube
SBLF25L30CT-E3/45
SBLB25L30CT-E3/45
SBLB25L30CT-E3/81
SBLF25L30CTHE3/45 (1)
SBLB25L30CTHE3_A/P (1)
SBLB25L30CTHE3_A/I (1)
Tube
Tape and reel
Tube
Tube
I
Tape and reel
Note
(1)
AEC-Q101 qualified, available in ITO-220AB and D2PAK (TO-263AB)
Revision: 20-Nov-17
Document Number: 88731
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
30
25
20
15
10
5
1000
100
10
Resistive or Inductive Load
TJ = 150 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0
0.01
0
50
100
150
10 20 30 40 50 60 70 80 90 100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
300
250
200
150
100
50
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
1000
100
0
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
100
10
1
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0.01
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 20-Nov-17
Document Number: 88731
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBL25L30CT, SBLF25L30CT, SBLB25L30CT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) max.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2 3
0.350 (8.89)
0.330 (8.38)
1
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.190 (4.83)
0.170 (4.32)
0.076 (1.93) REF.
0.076 (1.93) REF.
0.110 (2.79)
0.100 (2.54)
7° REF.
45° REF.
0.140 (3.56) DIA.
0.135 (3.43) DIA.
0.125 (3.17) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.028 (0.71)
0.020 (0.51)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.205 (5.21)
0.195 (4.95)
D2PAK (TO-263AB)
Mounting Pad Layout
0.411 (10.45)
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) min.
0.380 (9.65)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
1
K
2
0.591 (15.00)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 20-Nov-17
Document Number: 88731
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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