SBLB1640CTHE3_A/P [VISHAY]
Rectifier Diode,;
| 型号： | SBLB1640CTHE3_A/P |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 功效 瞄准线 二极管 |
| 文件： | 总5页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBLB1640CT
Vishay General Semiconductor
www.vishay.com
Dual Common Cathode Schottky Rectifier
FEATURES
TO-263AB
K
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
2
1
SBLB1640CT
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
PIN 1
PIN 2
K
HEATSINK
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IF(AV)
2 x 8 A
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
VRRM
40 V
250 A
IFSM
VF
0.55 V
MECHANICAL DATA
TJ max.
Package
Diode variations
125 °C
Case: TO-263AB
TO-263AB
Common cathode
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
SBL1640CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
40
28
40
16
8.0
VRWM
VDC
V
Maximum DC blocking voltage
total device
Maximum average forward rectified current
IF(AV)
IFSM
at TC = 95 °C
per diode
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
250
Operating junction and storage temperature range
TJ, TSTG
VAC
-40 to +125
1500
°C
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Revision: 13-Jun-17
Document Number: 88727
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBLB1640CT
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
0.55
0.5
UNIT
(1)
Maximum instantaneous forward voltage per diode
VF
8.0 A
V
TC = 25 °C
C = 100 °C
Maximum instantaneous reverse current at DC blocking
voltage per diode
(2)
IR
Rated VR
mA
T
50
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBLB1640CT
UNIT
Typical thermal resistance from junction to case
per diode
RθJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
SBLB1640CTHE3_A/P (1)
SBLB1640CTHE3_A/I (1)
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
1.35
1.35
P
I
50/tube
800/reel
Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 13-Jun-17
Document Number: 88727
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBLB1640CT
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
20
16
12
8
100
10
Resistive or Inductive Load
TJ = 125 °C
TJ = 75 °C
1
0.1
0.01
TJ = 25 °C
4
0
0.001
50
150
0
100
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
300
250
200
150
100
50
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
1000
0
100
10
0.1
1
10
100
1
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
10
TJ = 125 °C
Pulse Width = 300 µs
10
1 % Duty Cycle
TJ = 25 °C
1
1
0.1
0.01
0.1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
0.1
1
10
100
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 13-Jun-17
Document Number: 88727
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBLB1640CT
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 13-Jun-17
Document Number: 88727
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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