SBYV27-100-E3/4 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN;型号: | SBYV27-100-E3/4 |
厂家: | VISHAY |
描述: | Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN 功效 二极管 |
文件: | 总4页 (文件大小:78K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SBYV27-50 thru SBYV27-200
Vishay General Semiconductor
Soft Recovery Ultrafast Plastic Rectifier
FEATURES
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
DO-204AC (DO-15)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
2.0 A
50 V to 200 V
50 A
MECHANICAL DATA
15 ns
Case: DO-204AC (DO-15)
VF
0.88 V
Epoxy meets UL 94V-0 flammability rating
Tj max.
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
55
100
70
150
105
150
165
200
140
200
220
V
V
V
V
Maximum DC blocking voltage
Minimum reverse breakdown voltage at 100 µA
100
110
VBR
Maximum average forward rectified current
0.375" (9.5 mm) lead lengths at TL = 85 °C
IF(AV)
2.0
50
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number 88736
17-May-06
www.vishay.com
1
SBYV27-50 thru SBYV27-200
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 UNIT
Maximum
TJ = 25 °C
TJ = 150 °C
1.07
0.88
instantaneous
at 3.0 A
VF
V
forward voltage (1)
Maximum DC reverse
current at rated DC
blocking voltage
T
T
A = 25 °C
A = 100 °C
5.0
200
IR
µA
Maximum reverse
recovery time
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
at 4.0 V, 1 MHz
trr
15
15
ns
pF
Typical junction
capacitance
CJ
Note:
(1) Pulse test: 300 µs pulse width, duty cycle ≤ 2 %
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 UNIT
RθJA
Typical thermal resistance (1)
45
°C/W
Note:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length
ORDERING INFORMATION
PREFERRED P/N
SBYV27-200-E3/54
SBYV27-200-E3/73
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.404
54
73
4000
2000
13" Diameter Paper Tape & Reel
Ammo Pack Packaging
0.404
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
3.0
60
50
40
30
20
10
0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
TL Lead Temperature
10 ms Single Half Sine-Wave
TJ = 175 °C
2.5
2.0
1.5
1.0
0.5
0
TA, Ambient Temperature
P.C.B. Mounted
0.5" x 0.5" (12 x 12 mm)
Copper Pads
1
10
Number of Cycles at 50 Hz
100
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 1. Maximum Forward Current Derating Curves
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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2
Document Number 88736
17-May-06
SBYV27-50 thru SBYV27-200
Vishay General Semiconductor
100
60
IF = 2.0 A
VR = 30 V
50
TJ = 175 °C
di/dt = 150 A/µs
di/dt = 100 A/µs
10
1
40
TJ = 150 °C
di/dt = 20 A/µs
di/dt = 50 A/µs
30
20
di/dt = 100 A/µs
di/dt = 150 A/µs
di/dt = 50 A/µs
TJ = 125 °C
di/dt = 20 A/µs
0.1
0.01
TJ = 25 °C
10
0
trr
Q
rr
0
25
50
75
100
125
150
175
0.2
0.6
1
1.4
1.8
2.2
2.6
3
3.4
Instantaneous Forward Voltage (V)
Junction Temperature (°C)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Reverse Switching Charateristics
100
100
TJ = 175 °C
T
J
= 25 °C
f = 1.0 MHz
sig = 50 mVp-p
TJ = 165 °C
V
10
TJ = 125 °C
1
10
0.1
0.01
TJ = 25 °C
0.001
1
0.1
0
20
40
60
80
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88736
17-May-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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