SBYV27-200/73 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN;
SBYV27-200/73
型号: SBYV27-200/73
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

功效 二极管
文件: 总4页 (文件大小:330K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SBYV27-50 thru SBYV27-200  
Vishay General Semiconductor  
Soft Recovery Ultrafast Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
2.0 A  
50 V to 200 V  
50 A  
DO-204AC (DO-15)  
15 ns  
VF  
0.88 V  
Tj max.  
150 °C  
Features  
Mechanical Data  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
• Low leakage current  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Case: DO-204AC (DO-15)  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer and Telecommuni-  
cation  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
VRRM  
SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200  
Units  
Maximum repetitive peak reverse voltage  
50  
35  
50  
55  
100  
70  
150  
105  
150  
165  
200  
140  
200  
220  
V
V
V
V
A
Maximum RMS voltage  
VRMS  
VDC  
Maximum DC blocking voltage  
100  
110  
Minimum reverse breakdown voltage at 100 µA  
VBR  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead lengths at TL = 85 °C  
IF(AV)  
2.0  
50  
Peak forward surge current 10 ms single half sine-  
wave superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88736  
19-Oct-05  
www.vishay.com  
1
SBYV27-50 thru SBYV27-200  
Vishay General Semiconductor  
Electrical Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Maximum  
instantaneous forward  
voltage  
Test condition  
TJ = 25 °C  
TJ = 150 °C  
Symbol SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 Units  
at 3.0 A (1)  
VF  
1.07  
0.88  
V
Maximum DC reverse  
current at rated DC  
blocking voltage  
T
A = 25 °C  
IR  
5.0  
200  
µA  
TA =100 °C  
Maximum reverse  
recovery time  
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
at 4.0 V, 1 MHz  
trr  
15  
15  
ns  
Typical junction  
capacitance  
CJ  
pF  
Notes:  
(1) Pulse test: 300 µs pulse width, duty cycle 2 %  
Thermal Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Typical thermal resistance (1)  
Notes:  
Symbol SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 Units  
RθJA 45 °C/W  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
60  
50  
40  
30  
20  
10  
0
10 ms Single Half Sine-Wave  
TJ = 175 °C  
Resistive or Inductive Load  
0.375" (9.5mm) Lead Length  
TL Lead Temperature  
TA, Ambient Temperature  
P.C.B. Mounted  
0.5" x 0.5" (12 x 12mm)  
Copper Pads  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Temperature (°C)  
Number of Cycles at 50 Hz  
Figure 1. Maximum Forward Current Derating Curves  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88736  
19-Oct-05  
2
SBYV27-50 thru SBYV27-200  
Vishay General Semiconductor  
60  
100  
IF = 2.0 A  
VR  
= 30 V  
50  
40  
30  
20  
TJ = 175 °C  
di/dt=150A/ µs  
di/dt=100A/ µs  
10  
1
di/dt=20A/ µs  
di/dt=50A/ µs  
TJ = 150 °C  
di/dt=100A/ µs  
di/dt=150A/ µs  
di/dt=50A/ µs  
TJ = 125 °C  
di/dt=20A/ µs  
0.1  
0.01  
TJ = 25 °C  
10  
0
trr  
Q
rr  
175  
0
25  
50  
75  
100  
125  
150  
0.2  
0.6  
1
1.4  
1.8  
2.2  
2.6  
3
3.4  
Junction Temperature (°C)  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Reverse Switching Charateristics  
100  
100  
TJ = 175 °C  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
TJ = 165 °C  
10  
TJ = 125 °C  
1
10  
0.1  
0.01  
TJ = 25 °C  
0.001  
1
0.1  
0
20  
40  
60  
80  
100  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
Reverse Voltage (V)  
Figure 4. Typical Reverse Leakage Characteristics  
Figure 6. Typical Junction Capacitance  
Package outline dimensions in inches (millimeters)  
DO-204AC (DO-15)  
0.034 (0.86)  
0.028 (0.71)  
Dia.  
1.0 (25.4)  
min.  
0.300 (7.6)  
0.230 (5.8)  
0.140 (3.6)  
0.104 (2.6)  
Dia.  
1.0 (25.4)  
min.  
Document Number 88736  
19-Oct-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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