SD103AWS-HG3-18 [VISHAY]
Small Signal Schottky Diodes;
| 型号： | SD103AWS-HG3-18 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Schottky Diodes |
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD103AWS-G, SD103BWS-G, SD103CWS-G
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
MECHANICAL DATA
• Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
Case: SOD-323
Weight: approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
• For general purpose applications
• AEC-Q101 qualified available
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
ORDERING CODE
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
SD103AWS-G3-08 or SD103AWS-G3-18
SD103AWS-HG3-08 or SD103AWS-HG3-18
SD103BWS-G3-08 or SD103BWS-G3-18
SD103BWS-HG3-08 or SD103BWS-HG3-18
SD103CWS-G3-08 or SD103CWS-G3-18
SD101CWS-HG3-08 or SD101CWS-HG3-18
SD103AWS-G
Single diode
Z6
SD103BWS-G
SD103CWS-G
Single diode
Single diode
Z7
Z8
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VRRM
VRRM
VRRM
IF
VALUE
40
UNIT
V
SD103AWS-G
SD103BWS-G
SD103CWS-G
Repetitive peak reverse voltage
30
V
20
V
Forward continuous current (1)
Single cycle surge
350
2
mA
A
10 μs square wave
IFSM
Power dissipation (1)
Ptot
200
mW
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
500
UNIT
K/W
°C
Junction temperature
125
Operating temperature range
Storage temperature range
Top
-55 to +125
-55 to +150
°C
Tstg
°C
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.4, 21-Nov-13
Document Number: 81142
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD103AWS-G, SD103BWS-G, SD103CWS-G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
5
UNIT
μA
V
V
V
R = 30 V
R = 20 V
R = 10 V
SD103AWS-G
SD103BWS-G
SD103CWS-G
IR
IR
Leakage current
5
μA
IR
5
μA
IF = 20 mA
IF = 200 mA
VF
VF
CD
370
600
mV
mV
pF
Forward voltage drop
Diode capacitance
V
R = 0 V, f = 1 MHz
50
10
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
Reverse recovery time
trr
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
Tamb = 125 °C
100 °C
100
100
75 °C
10
10
50 °C
25 °C
1
1
0.1
0.1
0.01
0.01
0
5
10 15 20 25 30 35 40 45 50
0
0.2
0.4
0.6
0.8
1.0
20084
VR - Reverse Voltage (V)
18488
V
F
- Forward Voltage (V)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
100
5
t
= 300 ms
p
4
3
2
1
0
duty cycle = 2 %
10
1
0
10
20
30
40
50
0
0.5
1.0
1.5
18489
18491
V
F
- Forward Voltage (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical High Current Forward Conduction Curve
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.4, 21-Nov-13
Document Number: 81142
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD103AWS-G, SD103BWS-G, SD103CWS-G
www.vishay.com
Vishay Semiconductors
50
40
100 mA
30
200 mA
I
= 400 mA
F
20
10
0
0
100
- Ambient Temperature (°C)
200
18492
T
amb
Fig. 5 - Blocking Voltage Deration vs. Temperature at Various Average Forward Currents
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
Cathode bar
2.85 (0.112)
2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
1.6 (0.063)
Rev. 1.4, 21-Nov-13
Document Number: 81142
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 02-Oct-12
Document Number: 91000
1
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Vishay:
SD103AWS-G3-18 SD103BWS-G3-08 SD103CWS-G3-18 SD103AWS-G3-08 SD103CWS-G3-08 SD103BWS-G3-
18
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